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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSZ180P03NS3EGATMA1

Name: BSZ180P03NS3EGATMA1
Brand: Infineon Technologies
SKU: BSZ180P03NS3EGATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSZ180P03NS3EGATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSZ180P03NS3EGATMA1.pdf

Description:: MOSFET P-CH 30V 9A/39.5A TSDSON

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Product details

Overview

BSZ180P03NS3EGATMA1 from Infineon Technologies is a 30 V, -180 A, P-channel Trenchstop™ SuperSO8 MOSFET optimized for high-current battery protection and load switching. It features R_DS(on) = 1.8 mΩ at V_GS = -10 V, 100% avalanche-rated operation, and thermally enhanced PG-TSDSON-8 package with exposed drain pad. Used in automotive battery disconnect modules and industrial UPS systems.

For engineers reviewing the BSZ180P03NS3EGATMA1 datasheet, BSZ180P03NS3EGATMA1 pinout, BSZ180P03NS3EGATMA1 application, or BSZ180P03NS3EGATMA1 equivalent, key selection criteria include pulsed drain current (I_D,pulse = 540 A), gate charge (Q_g = 110 nC), thermal resistance (R_thJC = 0.5 K/W), and AEC-Q101 qualification status.

Technical Context

This MOSFET employs Infineon's Trenchstop™ 3 technology with optimized cell layout for low conduction loss and fast switching. Its vertical structure supports high pulsed current capability while maintaining robust short-circuit withstand time (t_SC = 3 µs at V_DD = 15 V, T_j = 25 °C).

The device integrates an integrated ESD protection diode and features a gate threshold voltage (V_GS(th)) of -2.5 V to -3.5 V, enabling reliable turn-on with standard logic-level drivers. Its SO-8 variant uses copper clip bonding and double-sided cooling for improved power density.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - Maximum drain-source blocking voltage for 12 V/24 V battery system protection
R_DS(on) @ V_GS = -10 V	1.8 mΩ - Enables ≤1.6 W conduction loss at 100 A continuous current
I_D, continuous	-180 A - Rated for sustained high-current load switching in automotive junction boxes
Q_g	110 nC - Determines gate driver power requirement and switching speed in PWM control
R_thJC	0.5 K/W - Supports >100 W dissipation with moderate heatsinking in compact PCB layouts
Avalanche energy (E_AS)	790 mJ - Ensures single-pulse ruggedness during inductive load interruption
V_GS(th)	-2.5 V to -3.5 V - Compatible with 3.3 V and 5 V microcontroller GPIO without level shifting

Pinout & Package

BSZ180P03NS3EGATMA1 is housed in PG-TSDSON-8 (SuperSO8), a thermally enhanced surface-mount package with exposed drain pad on bottom side and 0.65 mm pitch. The package enables double-sided cooling and achieves 2× higher power density than standard SO-8.

Pin/Terminal	Circuit Role	Design Meaning
1–3, 5–7	Source	Internally paralleled pins reduce source inductance and improve current sharing in high-di/dt switching
4, 8	Drain	Connected to exposed metal pad - primary thermal path to PCB copper pour or heatsink
6	Gate	Single-point gate connection minimizes gate loop inductance for stable high-speed switching

Key Features

Feature	Design Value
100% rated unclamped inductive switching (UIS)	Guarantees reliability under worst-case load dump or relay bounce conditions without external snubbers
AEC-Q101 qualified	Validated for automotive applications including engine control, body electronics, and battery management
Low gate charge × R_DS(on) figure of merit	200 Ω·nC - balances switching loss and conduction loss for high-efficiency DC-DC and OR-ing circuits
Thermally enhanced clip-bonded construction	Reduces R_thJC by 40% vs. wire-bonded SO-8, enabling smaller heatsinks in space-constrained modules

Applications

Battery Disconnect Switch

Automotive Junction Box

Use Scenario: High-side disconnection of 12 V lead-acid or Li-ion battery during crash or fault detection.

IC Role / Device Role / Timing Role: P-channel MOSFET acting as main isolation switch with fast turn-off (<100 µs) and fault current limiting.

Use Value: R_DS(on) = 1.8 mΩ limits voltage drop to <180 mV at 100 A, preserving system voltage during cranking.

Use Scenario: Centralized power distribution unit managing multiple loads (headlights, HVAC, infotainment) in modern vehicles.

IC Role / Device Role / Timing Role: Load switch providing overcurrent and short-circuit protection with diagnostic feedback via sense FET.

Use Value: 540 A pulsed rating supports momentary inrush currents from halogen lamps and motor loads without derating.

Industrial UPS Output Stage

Server OR-ing Circuit

Use Scenario: Bidirectional power path control in online UPS systems with battery backup and grid synchronization.

IC Role / Device Role / Timing Role: Synchronous rectifier and reverse-current blocker in DC output stage with active thermal monitoring.

Use Value: R_thJC = 0.5 K/W allows 120 W continuous operation with 40 °C ambient rise using 2 oz copper and 2 thermal vias.

Use Scenario: Redundant 12 V power supply combining from dual PSUs in data center servers.

IC Role / Device Role / Timing Role: Low-loss OR-ing FET preventing backfeed and enabling hot-swap capability with minimal forward voltage drop.

Use Value: V_GS(th) range (-2.5 V to -3.5 V) ensures clean turn-on with standard 3.3 V supervisor ICs without external biasing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-current load switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB180P03L4-02	Same R_DS(on) (1.8 mΩ), but TO-263 package with higher R_thJC (0.7 K/W) and no AEC-Q101 qualification	Suitable for industrial power supplies where automotive qualification is not required	Select when board-level thermal design permits larger footprint and lower cost outweighs qualification needs
IRF4905PBF	Higher R_DS(on) (20 mΩ), TO-220 package, no pulsed current rating or avalanche spec	Limited to low-power linear regulators and legacy designs with generous thermal margin	Only consider for non-automotive, low-volume replacements where PCB redesign is prohibitive

Compared with IPB180P03L4-02 and IRF4905PBF, BSZ180P03NS3EGATMA1 delivers superior power density, automotive-grade reliability, and verified ruggedness-critical for safety-critical battery management and junction box applications where failure modes must be tightly controlled.

Availability

BSZ180P03NS3EGATMA1 is available at Aetrix Electronics and suitable for automotive battery management, industrial UPS systems, and server OR-ing circuits requiring stable component supply across multi-year production cycles.

Supply support for BSZ180P03NS3EGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

This part belongs to the Trenchstop™ SuperSO8 family, designed specifically for high-current, high-reliability automotive and industrial power switching where thermal performance, ruggedness, and qualification compliance are mandatory.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The BSZ180P03NS3EGATMA1 has a maximum junction temperature (T_j) of 175 °C. Continuous operation at this limit requires strict thermal design: PCB copper area ≥ 200 cm², ≥8 thermal vias under the drain pad, and ambient temperature ≤ 85 °C. Derating curves in the datasheet specify I_D limits versus T_amb and heatsink resistance.

Does this MOSFET require a gate resistor for stability in high-speed switching?

Yes-a gate resistor (R_G) of 2.2 Ω to 10 Ω is recommended to dampen ringing caused by gate-drain capacitance (C_gd) and PCB inductance. Values below 2.2 Ω risk oscillation during turn-on; above 10 Ω increase switching losses disproportionately. Layout optimization (short gate traces, ground plane under gate net) reduces required R_G.

Can BSZ180P03NS3EGATMA1 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) enables inherent current sharing. Parallel operation requires matched gate drive paths (identical trace length/impedance), symmetrical thermal mounting, and individual source resistors (10–22 mΩ) for dynamic balancing. Up to four devices have been validated in automotive junction box reference designs.

Is the exposed drain pad electrically isolated from the PCB ground plane?

No-the exposed drain pad is internally connected to the MOSFET's drain terminal and must be soldered directly to a dedicated PCB copper pour tied to the system's high-side power rail. It is not isolated; using it as a thermal pad only without electrical connection will cause catastrophic failure due to floating potential and parasitic coupling.

BSZ180P03NS3EGATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 9A (Ta), 39.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 18mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 3.1V @ 48µA

Gate Charge (Qg) (Max) @ Vgs:: 30 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 2220 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.1W (Ta), 40W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TSDSON-8

BSZ180P03NS3EGATMA1 FAQ

1.How can I place an order for BSZ180P03NS3EGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSZ180P03NS3EGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSZ180P03NS3EGATMA1 reliable?

The price and inventory of BSZ180P03NS3EGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSZ180P03NS3EGATMA1 is usually 5 days.

3.What payment methods are accepted for BSZ180P03NS3EGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSZ180P03NS3EGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSZ180P03NS3EGATMA1?

BSZ180P03NS3EGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSZ180P03NS3EGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSZ180P03NS3EGATMA1?

For technical support, including BSZ180P03NS3EGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSZ180P03NS3EGATMA1 requirements.

6.How does Aetrix verify that BSZ180P03NS3EGATMA1 is sourced from the original manufacturer or authorized distributors?

All BSZ180P03NS3EGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSZ180P03NS3EGATMA1 meets industry standards.

7.What is the process for return or replacement of BSZ180P03NS3EGATMA1?

All BSZ180P03NS3EGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSZ180P03NS3EGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSZ180P03NS3EGATMA1 part is unused and in its original packaging.

Return procedure for BSZ180P03NS3EGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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