Nexperia USA Inc. PSMN9R5-30YLC,115

Overview

PSMN9R5-30YLC from Nexperia is a logic-level enhancement-mode N-channel MOSFET in LFPAK (SOT669) package, rated for 30 V V_DS, 9.8 mΩ R_DS(on) at V_GS = 10 V and 15 A, optimized for 4.5 V gate drive using NextPower Superjunction technology, and qualified to 175 °C junction temperature for industrial DC-DC converters and synchronous buck regulators.

For engineers reviewing the PSMN9R5-30YLC datasheet, PSMN9R5-30YLC pinout, PSMN9R5-30YLC application, or PSMN9R5-30YLC equivalent, this device delivers ultra-low Q_G (5 nC), Q_GD (1.6 nC), and Q_OSS (4.4 nC) to minimize switching losses in high-frequency power stages while maintaining robust avalanche energy rating (9 mJ) and low thermal resistance (4.26 K/W).

Technical Context

This MOSFET employs Nexperia's NextPower Superjunction architecture to achieve low on-resistance with minimal gate charge, enabling high-efficiency operation under both low- and high-load conditions. Its logic-level gate threshold (1.05–1.95 V) ensures full enhancement with standard 3.3 V/5 V microcontroller outputs.

The LFPAK package integrates a thermally enhanced mounting base connected directly to the drain, delivering R_th(j-mb) = 4.26 K/W and supporting continuous I_D = 44 A at T_mb = 25 °C. The three-source-pin configuration reduces source inductance and improves current sharing in high-dI/dt applications.

Key Specifications

Pinout & Package

LFPAK (SOT669) is a 4-lead plastic single-ended surface-mounted package with exposed drain mounting base. Thermal performance is maximized by direct die-to-base thermal path and low-inductance source configuration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with PSMN2R0-30YLC and IPB017N04LG, the PSMN9R5-30YLC offers optimal balance of low R_DS(on), ultra-low Q_G, and logic-level compatibility in a compact LFPAK package-making it preferred for space-constrained, high-frequency industrial DC-DC and load-switch designs where gate drive simplicity and thermal efficiency are critical.

Availability

PSMN9R5-30YLC is available at Aetrix Electronics and suitable for industrial DC-DC converters, synchronous buck regulators, and 24 V load-switching applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for PSMN9R5-30YLC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert specializing in high-performance, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs.

This part belongs to Nexperia's NextPower Superjunction MOSFET product line, engineered specifically for high-efficiency, high-frequency power conversion in industrial, communications, and computing infrastructure.

FAQ

What is the maximum continuous drain current for PSMN9R5-30YLC at 100 °C mounting base temperature?

At T_mb = 100 °C, the maximum continuous drain current is 31 A when V_GS = 10 V, as specified in Table 4 (Limiting Values). This derating reflects thermal constraints of the LFPAK package and must be verified against actual PCB copper area and airflow in the target application.

Does PSMN9R5-30YLC have avalanche capability, and how is it characterized?

Yes, PSMN9R5-30YLC is rated for non-repetitive drain-source avalanche energy of 9 mJ under defined conditions: V_GS = 10 V, T_j(init) = 25 °C, I_D = 44 A, V_sup ≤30 V, and R_GS = 50 Ω (unclamped). This rating is validated per JEDEC JESD22-A115 and supports robustness in inductive switching faults.

Can PSMN9R5-30YLC be driven directly from a 3.3 V microcontroller GPIO without a gate driver?

Yes-the device has a typical V_GS(th) of 1.66 V and is fully enhanced at V_GS = 4.5 V. With 3.3 V logic, it operates in the linear region but delivers sufficient I_D (>10 A) for many load-switch applications; for full saturation and minimal R_DS(on), a 5 V gate drive or level shifter is recommended.

How does the LFPAK package compare thermally to standard SO-8 for this MOSFET?

The LFPAK (SOT669) package achieves R_th(j-mb) = 4.26 K/W-approximately 2.5× better than standard SO-8 (typically ~10–12 K/W)-due to its exposed drain mounting base and reduced die-to-package thermal path. This enables higher power dissipation (34 W vs. ~10–15 W) at the same T_mb, critical for compact industrial power designs.