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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
APT100F50J MOSFET N-CH 500V 103A ISOTOP Microchip Technology	9,775	RFQ	Datasheet	POWER MOS 8™	SOT-227-4, miniBLOC	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	103A (Tc)	10V	36mOhm @ 75A, 10V	5V @ 5mA	620 nC @ 10 V	±30V	24600 pF @ 25 V	-	960W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	ISOTOP®
APT60M75JFLL MOSFET N-CH 600V 58A ISOTOP Microchip Technology	2,496	RFQ	Datasheet	POWER MOS 7®	SOT-227-4, miniBLOC	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	58A (Tc)	10V	75mOhm @ 29A, 10V	5V @ 5mA	195 nC @ 10 V	±30V	8930 pF @ 25 V	-	595W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	ISOTOP®
F433MR12W1M1HPB76BPSA1 EASY STANDARD Infineon Technologies	5,155	RFQ	-	-	-	Tray	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
APT10026L2LLG MOSFET N-CH 1000V 38A 264 MAX Microchip Technology	8,286	RFQ	Datasheet	POWER MOS 7®	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	38A (Tc)	-	260mOhm @ 19A, 10V	5V @ 5mA	267 nC @ 10 V	-	7114 pF @ 25 V	-	-	-	-	-	Through Hole	264 MAX™ [L2]
APT34M120J MOSFET N-CH 1200V 35A SOT227 Microchip Technology	7,967	RFQ	Datasheet	-	SOT-227-4, miniBLOC	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	35A (Tc)	10V	300mOhm @ 25A, 10V	5V @ 2.5mA	560 nC @ 10 V	±30V	18200 pF @ 25 V	-	960W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227
APT45M100J MOSFET N-CH 1000V 45A SOT227 Microchip Technology	4,976	RFQ	Datasheet	-	SOT-227-4, miniBLOC	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	45A (Tc)	10V	180mOhm @ 33A, 10V	5V @ 2.5mA	570 nC @ 10 V	±30V	18500 pF @ 25 V	-	960W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227
APT10M07JVFR MOSFET N-CH 100V 225A ISOTOP Microchip Technology	6,981	RFQ	Datasheet	POWER MOS V®	SOT-227-4, miniBLOC	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	225A (Tc)	-	7mOhm @ 500mA, 10V	4V @ 5mA	1050 nC @ 10 V	-	21600 pF @ 25 V	-	-	-	-	-	Chassis Mount	ISOTOP®
APT60M75JLL MOSFET N-CH 600V 58A ISOTOP Microchip Technology	9,977	RFQ	Datasheet	POWER MOS 7®	SOT-227-4, miniBLOC	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	58A (Tc)	10V	75mOhm @ 29A, 10V	5V @ 5mA	195 nC @ 10 V	±30V	8930 pF @ 25 V	-	595W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	ISOTOP®
APT12057JFLL MOSFET N-CH 1200V 19A ISOTOP Microchip Technology	2,941	RFQ	Datasheet	POWER MOS 7®	SOT-227-4, miniBLOC	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	19A (Tc)	-	570mOhm @ 9.5A, 10V	5V @ 2.5mA	185 nC @ 10 V	-	5155 pF @ 25 V	-	-	-	-	-	Chassis Mount	ISOTOP®
APT20M11JLL MOSFET N-CH 200V 176A ISOTOP Microchip Technology	6,776	RFQ	Datasheet	POWER MOS 7®	SOT-227-4, miniBLOC	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	176A (Tc)	-	11mOhm @ 88A, 10V	5V @ 5mA	180 nC @ 10 V	-	10320 pF @ 25 V	-	-	-	-	-	Chassis Mount	ISOTOP®
APTM120DA30T1G MOSFET N-CH 1200V 31A SP1 Microchip Technology	7,057	RFQ	Datasheet	-	SP1	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	31A (Tc)	10V	360mOhm @ 25A, 10V	5V @ 2.5mA	560 nC @ 10 V	±30V	14560 pF @ 25 V	-	657W (Tc)	-40°C ~ 150°C (TJ)	-	-	Chassis Mount	SP1
APTC60SKM24T1G MOSFET N-CH 600V 95A SP1 Microchip Technology	4,957	RFQ	Datasheet	CoolMOS™	SP1	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	600 V	95A (Tc)	10V	24mOhm @ 47.5A, 10V	3.9V @ 5mA	300 nC @ 10 V	±20V	14400 pF @ 25 V	-	462W (Tc)	-40°C ~ 150°C (TJ)	-	-	Chassis Mount	SP1
APT30M19JVR MOSFET N-CH 300V 130A ISOTOP Microchip Technology	9,616	RFQ	Datasheet	POWER MOS V®	SOT-227-4, miniBLOC	Tube	Active	N-Channel	MOSFET (Metal Oxide)	300 V	130A (Tc)	10V	19mOhm @ 500mA, 10V	4V @ 5mA	975 nC @ 10 V	±30V	21600 pF @ 25 V	-	700W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	ISOTOP®
APT10026L2FLLG MOSFET N-CH 1000V 38A 264 MAX Microchip Technology	7,207	RFQ	Datasheet	POWER MOS 7®	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	38A (Tc)	-	260mOhm @ 19A, 10V	5V @ 5mA	267 nC @ 10 V	-	7114 pF @ 25 V	-	-	-	-	-	Through Hole	264 MAX™ [L2]
MCB60I1200TZ 1200V 90A SIC POWER MOSFET IXYS	5,189	RFQ	Datasheet	-	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Obsolete	N-Channel	SiCFET (Silicon Carbide)	1200 V	90A (Tc)	20V	34mOhm @ 50A, 20V	4V @ 15mA	160 nC @ 20 V	+20V, -5V	2790 pF @ 1000 V	-	-	-40°C ~ 175°C (TJ)	-	-	Surface Mount	TO-268AA (D3Pak-HV)
GA16JT17-247 TRANS SJT 1700V 16A TO247AB GeneSiC Semiconductor	2,326	RFQ	Datasheet	-	TO-247-3	Tube	Obsolete	-	SiC (Silicon Carbide Junction Transistor)	1700 V	16A (Tc) (90°C)	-	110mOhm @ 16A	-	-	-	-	-	282W (Tc)	175°C (TJ)	-	-	Through Hole	TO-247AB
APT20M11JFLL MOSFET N-CH 200V 176A ISOTOP Microchip Technology	2,064	RFQ	Datasheet	POWER MOS 7®	SOT-227-4, miniBLOC	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	176A (Tc)	-	11mOhm @ 88A, 10V	5V @ 5mA	180 nC @ 10 V	-	10320 pF @ 25 V	-	-	-	-	-	Chassis Mount	ISOTOP®
GA50JT12-247 TRANS SJT 1200V 100A TO247AB GeneSiC Semiconductor	9,341	RFQ	Datasheet	-	TO-247-3	Tube	Obsolete	-	SiC (Silicon Carbide Junction Transistor)	1200 V	100A (Tc)	-	25mOhm @ 50A	-	-	-	7209 pF @ 800 V	-	583W (Tc)	175°C (TJ)	-	-	Through Hole	TO-247AB
GA50JT12-263 TRANSISTOR 1200V 100A TO263-7 GeneSiC Semiconductor	6,512	RFQ	-	*	-	Tube	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
APT8015JVR MOSFET N-CH 800V 44A ISOTOP Microchip Technology	2,539	RFQ	Datasheet	POWER MOS V®	SOT-227-4, miniBLOC	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	44A (Tc)	-	150mOhm @ 500mA, 10V	4V @ 5mA	285 nC @ 10 V	-	17650 pF @ 25 V	-	-	-	-	-	Chassis Mount	ISOTOP®

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