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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
GA100JT12-227 TRANS SJT 1200V 160A SOT227 GeneSiC Semiconductor	4,741	RFQ	-	-	SOT-227-4, miniBLOC	Tube	Obsolete	-	SiC (Silicon Carbide Junction Transistor)	1200 V	160A (Tc)	-	10mOhm @ 100A	-	-	-	14400 pF @ 800 V	-	535W (Tc)	-55°C ~ 175°C (TJ)	-	-	Chassis Mount	SOT-227
VMO1600-02P MOSFET N-CH 200V 1900A Y3-LI IXYS	6,845	RFQ	Datasheet	PolarHT™	Y3-Li	Tray	Obsolete	N-Channel	MOSFET (Metal Oxide)	200 V	1900A (Tc)	10V	1.7mOhm @ 1600A, 10V	5V @ 5mA	2900 nC @ 10 V	±20V	-	-	-	-40°C ~ 150°C (TJ)	-	-	Chassis Mount	Y3-Li
2N6660JTVP02 MOSFET N-CH 60V 990MA TO205AD Vishay Siliconix	2,002	RFQ	Datasheet	-	TO-205AD, TO-39-3 Metal Can	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	990mA (Tc)	5V, 10V	3Ohm @ 1A, 10V	2V @ 1mA	-	±20V	50 pF @ 25 V	-	725mW (Ta), 6.25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-205AD (TO-39)
GA50JT17-247 TRANS SJT 1700V 100A TO247 GeneSiC Semiconductor	3,478	RFQ	Datasheet	-	TO-247-3	Tube	Obsolete	-	SiC (Silicon Carbide Junction Transistor)	1700 V	100A (Tc)	-	25mOhm @ 50A	-	-	-	-	-	583W (Tc)	175°C (TJ)	-	-	Through Hole	TO-247
APTC60DAM18CTG MOSFET N-CH 600V 143A SP4 Microchip Technology	9,381	RFQ	Datasheet	CoolMOS™	SP4	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	600 V	143A (Tc)	10V	18mOhm @ 71.5A, 10V	3.9V @ 4mA	1036 nC @ 10 V	±30V	28000 pF @ 25 V	-	833W (Tc)	-40°C ~ 150°C (TJ)	-	-	Chassis Mount	SP4
APTM120UM95FAG MOSFET N-CH 1200V 103A SP6 Microsemi Corporation	2,474	RFQ	Datasheet	-	SP6	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	1200 V	103A (Tc)	10V	114mOhm @ 51.5A, 10V	5V @ 15mA	1122 nC @ 10 V	±30V	30900 pF @ 25 V	-	2272W (Tc)	-40°C ~ 150°C (TJ)	-	-	Chassis Mount	SP6
2N7636-GA TRANS SJT 650V 4A TO276 GeneSiC Semiconductor	6,228	RFQ	-	-	TO-276AA	Bulk	Obsolete	-	SiC (Silicon Carbide Junction Transistor)	650 V	4A (Tc) (165°C)	-	415mOhm @ 4A	-	-	-	324 pF @ 35 V	-	125W (Tc)	-55°C ~ 225°C (TJ)	-	-	Surface Mount	TO-276
DDB2U80N12W3RFC39BPSA1 EASY STANDARD PLUS Infineon Technologies	5,718	RFQ	-	-	-	Tray	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2N7635-GA TRANS SJT 650V 4A TO257 GeneSiC Semiconductor	7,908	RFQ	-	-	TO-257-3	Bulk	Obsolete	-	SiC (Silicon Carbide Junction Transistor)	650 V	4A (Tc) (165°C)	-	415mOhm @ 4A	-	-	-	324 pF @ 35 V	-	47W (Tc)	-55°C ~ 225°C (TJ)	-	-	Through Hole	TO-257
2N6660JTXP02 MOSFET N-CH 60V 990MA TO205AD Vishay Siliconix	4,383	RFQ	Datasheet	-	TO-205AD, TO-39-3 Metal Can	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	990mA (Tc)	5V, 10V	3Ohm @ 1A, 10V	2V @ 1mA	-	±20V	50 pF @ 25 V	-	725mW (Ta), 6.25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-205AD (TO-39)
APTM50DAM19G MOSFET N-CH 500V 163A SP6 Microchip Technology	4,195	RFQ	Datasheet	-	SP6	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	500 V	163A (Tc)	10V	22.5mOhm @ 81.5A, 10V	5V @ 10mA	492 nC @ 10 V	±30V	22400 pF @ 25 V	-	1136W (Tc)	-40°C ~ 150°C (TJ)	-	-	Chassis Mount	SP6
APTM50SKM19G MOSFET N-CH 500V 163A SP6 Microchip Technology	5,824	RFQ	Datasheet	-	SP6	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	500 V	163A (Tc)	10V	22.5mOhm @ 81.5A, 10V	5V @ 10mA	492 nC @ 10 V	±30V	22400 pF @ 25 V	-	1136W (Tc)	-40°C ~ 150°C (TJ)	-	-	Chassis Mount	SP6
APTM20DAM05G MOSFET N-CH 200V 317A SP6 Microchip Technology	6,536	RFQ	Datasheet	-	SP6	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	200 V	317A (Tc)	10V	6mOhm @ 158.5A, 10V	5V @ 10mA	448 nC @ 10 V	±30V	27400 pF @ 25 V	-	1136W (Tc)	-40°C ~ 150°C (TJ)	-	-	Chassis Mount	SP6
APTM120U10DAG MOSFET N-CH 1200V 160A SP6 Microsemi Corporation	5,208	RFQ	Datasheet	-	SP6	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	1200 V	160A (Tc)	10V	120mOhm @ 58A, 10V	5V @ 20mA	1100 nC @ 10 V	±30V	28900 pF @ 25 V	-	3290W (Tc)	-40°C ~ 150°C (TJ)	-	-	Chassis Mount	SP6
2N7638-GA TRANS SJT 650V 8A TO276 GeneSiC Semiconductor	4,432	RFQ	Datasheet	-	TO-276AA	Bulk	Obsolete	-	SiC (Silicon Carbide Junction Transistor)	650 V	8A (Tc) (158°C)	-	170mOhm @ 8A	-	-	-	720 pF @ 35 V	-	200W (Tc)	-55°C ~ 225°C (TJ)	-	-	Surface Mount	TO-276
2N7637-GA TRANS SJT 650V 7A TO257 GeneSiC Semiconductor	4,536	RFQ	-	-	TO-257-3	Bulk	Obsolete	-	SiC (Silicon Carbide Junction Transistor)	650 V	7A (Tc) (165°C)	-	170mOhm @ 7A	-	-	-	720 pF @ 35 V	-	80W (Tc)	-55°C ~ 225°C (TJ)	-	-	Through Hole	TO-257
APTM20DAM04G MOSFET N-CH 200V 372A SP6 Microchip Technology	7,385	RFQ	Datasheet	-	SP6	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	200 V	372A (Tc)	10V	5mOhm @ 186A, 10V	5V @ 10mA	560 nC @ 10 V	±30V	28900 pF @ 25 V	-	1250W (Tc)	-40°C ~ 150°C (TJ)	-	-	Chassis Mount	SP6
APTM20SKM04G MOSFET N-CH 200V 372A SP6 Microchip Technology	5,320	RFQ	Datasheet	-	SP6	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	200 V	372A (Tc)	10V	5mOhm @ 186A, 10V	5V @ 10mA	560 nC @ 10 V	±30V	28900 pF @ 25 V	-	1250W (Tc)	-40°C ~ 150°C (TJ)	-	-	Chassis Mount	SP6
APTM100DAM90G MOSFET N-CH 1000V 78A SP6 Microchip Technology	2,442	RFQ	Datasheet	-	SP6	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	78A (Tc)	10V	105mOhm @ 39A, 10V	5V @ 10mA	744 nC @ 10 V	±30V	20700 pF @ 25 V	-	1250W (Tc)	-40°C ~ 150°C (TJ)	-	-	Chassis Mount	SP6
APTM50DAM17G MOSFET N-CH 500V 180A SP6 Microchip Technology	2,253	RFQ	Datasheet	-	SP6	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	500 V	180A (Tc)	10V	20mOhm @ 90A, 10V	5V @ 10mA	560 nC @ 10 V	±30V	28000 pF @ 25 V	-	1250W (Tc)	-40°C ~ 150°C (TJ)	-	-	Chassis Mount	SP6

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