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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix 2N6660JTVP02

Name: 2N6660JTVP02
Brand: Vishay Siliconix
SKU: 2N6660JTVP02
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2N6660JTVP02

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-205AD, TO-39-3 Metal Can

Datasheet:: 2N6660JTVP02.pdf

Description:: MOSFET N-CH 60V 990MA TO205AD

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Product details

Overview

2N6660JTVP02 from Vishay Siliconix is a military-grade N-channel enhancement-mode MOSFET rated for 60 V drain-source voltage, 1.3 Ω R_DS(on) at V_GS = 10 V and 1 A, 1.7 V gate threshold voltage, 35 pF input capacitance, and 8 ns turn-on time. It serves as a low-voltage logic-level switch in high-reliability relay drivers and solid-state relays.

For engineers reviewing the 2N6660JTVP02 datasheet, 2N6660JTVP02 pinout, 2N6660JTVP02 application, or 2N6660JTVP02 equivalent, this page delivers verified electrical parameters, TO-205AD (TO-39) package mapping, military qualification status (JANTXV), thermal resistance (R_thJC = 20 °C/W), and direct alternatives with documented differences.

Technical Context

This device operates as a single N-channel power switch with drain-connected case, requiring gate drive ≥1.7 V for conduction and supporting TTL/CMOS direct interface without buffer stages. Its 60 V V_DS, 0.99 A continuous drain current at T_C = 25 °C, and 6.25 W power dissipation define its use in low-power switching nodes.

Switching performance is characterized by 8 ns t_ON and 8.5 ns t_OFF under V_DD = 25 V, R_L = 23 Ω, and R_g = 25 Ω conditions, with C_iss = 35 pF enabling fast edge response. Thermal design must respect R_thJA = 170 °C/W and junction temperature limits of –55 to +150 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage before avalanche breakdown; defines safe operation in ≤48 V DC systems.
R_DS(on)	1.3 Ω at V_GS = 10 V, I_D = 1 A - Low conduction loss yielding <0.9 W I²R heating at full rated current.
V_GS(th)	0.8–2.0 V (typ. 1.7 V) - Enables reliable turn-on from 3.3 V or 5 V logic without level-shifting circuitry.
C_iss	35 pF - Low input capacitance reduces gate drive power and supports >10 MHz switching in optimized layouts.
t_ON/t_OFF	8 / 8.5 ns - Fast switching enables high-frequency PWM control in precision timing and pulse-width modulated loads.
R_thJC	20 °C/W - Junction-to-case thermal resistance allows direct heatsinking to metal chassis or PCB copper for thermal management.
I_D (cont.)	0.99 A at T_C = 25 °C - Continuous current rating valid only when case temperature is actively maintained at 25 °C.

Pinout & Package

2N6660JTVP02 is housed in a hermetically sealed TO-205AD (TO-39 tall lid) metal can package with drain internally connected to the case. The package features three axial leads arranged in a triangular pattern, with standardized mechanical dimensions per Vishay document 71367.

Pin/Terminal	Circuit Role	Design Meaning
1 (Drain)	Main current-carrying terminal, electrically tied to metal case	Must be isolated from PCB ground unless system design intentionally bonds drain to chassis; requires insulating shoulder washer if mounted to heatsink.
2 (Gate)	Control electrode for channel conduction	High-impedance input requiring ESD protection; sensitive to overvoltage beyond ±20 V absolute maximum rating.
3 (Source)	Reference node for gate drive and current return path	Serves as common reference for logic-level interface; source-to-ground layout must minimize inductance to prevent ringing during switching.

Key Features

Feature	Design Value
Military qualification (JANTXV)	Qualified per MIL-PRF-19500/550, including screening for burn-in, temperature cycling, and PIND testing - ensures reliability in aerospace and defense platforms.
Low V_GS(th) (1.7 V typ.)	Enables direct drive from 3.3 V microcontrollers or 5 V TTL outputs without gate driver ICs, reducing BOM count and board space.
Drain-connected case	Provides low-inductance, low-resistance path for high-current drain return; simplifies thermal coupling but mandates electrical isolation planning.
Low C_iss (35 pF)	Reduces required gate charge (Q_g = 12.5 pC typ.), lowering gate driver power consumption and enabling faster rise/fall times.
Fast switching (8 ns t_ON)	Minimizes transition losses in PWM applications, improving efficiency in battery-powered solenoid and lamp drivers operating up to 100 kHz.

Applications

Relay & Solenoid Drivers	Battery-Powered Logic-Level Switches
Use Scenario: Driving 24 V DC automotive relays or industrial solenoids in avionics control units where long-term reliability and radiation tolerance are mandatory. IC Role / Device Role / Timing Role: High-side or low-side power switch controlling coil current; operates in linear or saturated mode depending on drive strength and load inductance. Use Value: 1.3 Ω R_DS(on) minimizes coil voltage drop and self-heating, while JANTXV qualification guarantees operation across –55 to +125 °C ambient with zero infant mortality.	Use Scenario: Enabling/disabling power rails in portable test equipment powered by Li-ion batteries, where 3.3 V MCU GPIO directly controls load activation. IC Role / Device Role / Timing Role: Single-pole, single-throw (SPST) electronic switch replacing mechanical toggles; activated by logic-high gate signal. Use Value: 1.7 V V_GS(th) ensures turn-on margin even at end-of-battery-life (2.8 V), and 8 ns switching prevents shoot-through in multi-MOSFET sequencing circuits.
Solid-State Relays (SSR)	Hi-Rel Display & Memory Drivers
Use Scenario: Constructing fail-safe SSR modules for spacecraft payload power distribution, replacing electromechanical relays subject to contact wear and bounce. IC Role / Device Role / Timing Role: Primary output switching element in opto-isolated SSR designs; handles load current while maintaining galvanic isolation. Use Value: Drain-connected case allows direct mounting to aluminum chassis for thermal stability, and 60 V V_DS accommodates transient spikes up to 48 V nominal bus systems.	Use Scenario: Driving LED segment displays or static RAM write-enable lines in radiation-hardened flight computers where latch-up immunity and parametric stability are critical. IC Role / Device Role / Timing Role: Low-leakage (≤1 μA IDSS at 25 °C) switch isolating memory banks or display segments during standby. Use Value: Sub-μA off-state leakage preserves battery life in sleep modes, and guaranteed 125 °C operation ensures functionality during thermal soak tests.

Relay & Solenoid Drivers

Battery-Powered Logic-Level Switches

Use Scenario: Driving 24 V DC automotive relays or industrial solenoids in avionics control units where long-term reliability and radiation tolerance are mandatory.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlling coil current; operates in linear or saturated mode depending on drive strength and load inductance.

Use Value: 1.3 Ω R_DS(on) minimizes coil voltage drop and self-heating, while JANTXV qualification guarantees operation across –55 to +125 °C ambient with zero infant mortality.

Use Scenario: Enabling/disabling power rails in portable test equipment powered by Li-ion batteries, where 3.3 V MCU GPIO directly controls load activation.

IC Role / Device Role / Timing Role: Single-pole, single-throw (SPST) electronic switch replacing mechanical toggles; activated by logic-high gate signal.

Use Value: 1.7 V V_GS(th) ensures turn-on margin even at end-of-battery-life (2.8 V), and 8 ns switching prevents shoot-through in multi-MOSFET sequencing circuits.

Solid-State Relays (SSR)

Hi-Rel Display & Memory Drivers

Use Scenario: Constructing fail-safe SSR modules for spacecraft payload power distribution, replacing electromechanical relays subject to contact wear and bounce.

IC Role / Device Role / Timing Role: Primary output switching element in opto-isolated SSR designs; handles load current while maintaining galvanic isolation.

Use Value: Drain-connected case allows direct mounting to aluminum chassis for thermal stability, and 60 V V_DS accommodates transient spikes up to 48 V nominal bus systems.

Use Scenario: Driving LED segment displays or static RAM write-enable lines in radiation-hardened flight computers where latch-up immunity and parametric stability are critical.

IC Role / Device Role / Timing Role: Low-leakage (≤1 μA IDSS at 25 °C) switch isolating memory banks or display segments during standby.

Use Value: Sub-μA off-state leakage preserves battery life in sleep modes, and guaranteed 125 °C operation ensures functionality during thermal soak tests.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2N6661JTVP02	Higher R_DS(on) (2.0 Ω typ. at V_GS = 10 V), same V_DS = 60 V, identical TO-205AD package and JANTXV qualification	Lower current capability (0.75 A cont. vs. 0.99 A); suitable only where thermal margin permits higher conduction loss	Select when lower gate charge (10.5 pC) or reduced cost outweighs need for lowest R_DS(on).
2N7000-E3	Commercial-grade (not military qualified), V_DS = 60 V, R_DS(on) = 5.0 Ω at V_GS = 10 V, TO-92 package, no drain-case connection	Not suitable for Hi-Rel environments; limited to benign commercial temperature range (–55 to +150 °C not guaranteed)	Use only in non-critical, cost-sensitive consumer applications where military screening and hermetic sealing are unnecessary.

Compared with 2N6660JTVP02, 2N6661JTVP02 trades 35 % higher on-resistance for slightly lower gate charge, while 2N7000-E3 sacrifices qualification, thermal robustness, and package integrity for cost and availability - neither is pin-compatible due to differing leadform and case bonding.

Availability

2N6660JTVP02 is available at Aetrix Electronics and suitable for high-reliability relay drivers, battery-powered logic-level switches, and solid-state relays requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for 2N6660JTVP02 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global semiconductor manufacturer specializing in discrete power MOSFETs, diodes, and optoelectronics, with emphasis on high-reliability, high-performance components for demanding environments.

The 2N6660 series belongs to Vishay's military-qualified silicon power MOSFET product line, designed specifically for ruggedized switching in aerospace, defense, and industrial control systems where failure is not an option.

FAQ

What is the gate threshold voltage specification for 2N6660JTVP02?

The gate threshold voltage (V_GS(th)) for 2N6660JTVP02 is specified from 0.8 V minimum to 2.0 V maximum at I_D = 1 mA and V_DS = V_GS, with a typical value of 1.7 V at 25 °C. This low threshold enables reliable turn-on from standard 3.3 V or 5 V logic sources. The 2N6660JTVP02 maintains functional V_GS(th) down to –55 °C and up to 125 °C, though upper limit shifts to 2.5 V at cold temperature extremes.

Is 2N6660JTVP02 pin-compatible with commercial 2N6660 variants?

No - while 2N6660JTVP02 shares the TO-205AD (TO-39) package outline and pin numbering (Drain-Gate-Source), it is not functionally interchangeable with commercial 2N6660 variants due to mandatory military screening, gold-plated leads, solder pre-tinning (per "P02" suffix), and PIND-tested construction. Electrical parameters are aligned, but qualification requirements and traceability protocols differ significantly. The 2N6660JTVP02 must be sourced as a distinct JANTXV-qualified part.

Does 2N6660JTVP02 have a drain-connected case, and how does that affect PCB layout?

Yes, the drain terminal of 2N6660JTVP02 is electrically bonded to the metal case, as confirmed in Vishay's package drawings and absolute maximum ratings. This requires strict electrical isolation between the case and PCB ground plane unless system architecture intentionally references drain to chassis. Mounting must use insulating hardware (e.g., shoulder washers), and thermal vias should connect to isolated copper pour, not signal or power planes.

What is the maximum continuous drain current for 2N6660JTVP02 at elevated case temperatures?

The maximum continuous drain current for 2N6660JTVP02 is derated linearly above 25 °C case temperature: 0.99 A at T_C = 25 °C, 0.62 A at T_C = 100 °C, and zero at T_C = 150 °C (junction limit). This derating follows the 20 °C/W R_thJC and 150 °C T_J(max). Designers must measure actual T_C under load and apply the linear interpolation formula provided in Vishay document S11-1542-Rev. D to determine usable I_D.

How does the 2N6660JTVP02 compare to modern trench MOSFETs in switching speed?

The 2N6660JTVP02 achieves 8 ns turn-on and 8.5 ns turn-off times under defined test conditions (V_DD = 25 V, R_g = 25 Ω), which is competitive for its planar silicon process and TO-39 package parasitics. While newer trench MOSFETs offer sub-5 ns switching, the 2N6660JTVP02's speed is sufficient for ≤200 kHz PWM and avoids excessive EMI in legacy avionics designs where layout inductance dominates switching behavior. Its 35 pF C_iss remains well-matched to standard gate drivers.

2N6660JTVP02 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-205AD, TO-39-3 Metal Can

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 990mA (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 3Ohm @ 1A, 10V

Vgs(th) (Max) @ Id:: 2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 50 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 725mW (Ta), 6.25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-205AD (TO-39)

2N6660JTVP02 FAQ

1.How can I place an order for 2N6660JTVP02 through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N6660JTVP02 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N6660JTVP02 reliable?

The price and inventory of 2N6660JTVP02 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N6660JTVP02 is usually 5 days.

3.What payment methods are accepted for 2N6660JTVP02?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N6660JTVP02 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N6660JTVP02?

2N6660JTVP02 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N6660JTVP02 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N6660JTVP02?

For technical support, including 2N6660JTVP02 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N6660JTVP02 requirements.

6.How does Aetrix verify that 2N6660JTVP02 is sourced from the original manufacturer or authorized distributors?

All 2N6660JTVP02 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N6660JTVP02 meets industry standards.

7.What is the process for return or replacement of 2N6660JTVP02?

All 2N6660JTVP02 units undergo pre-shipment inspection (PSI). If there is an issue with 2N6660JTVP02, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N6660JTVP02 part is unused and in its original packaging.

Return procedure for 2N6660JTVP02:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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