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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix 2N6660JTXP02

Name: 2N6660JTXP02
Brand: Vishay Siliconix
SKU: 2N6660JTXP02
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2N6660JTXP02

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-205AD, TO-39-3 Metal Can

Datasheet:: 2N6660JTXP02.pdf

Description:: MOSFET N-CH 60V 990MA TO205AD

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Product details

Overview

2N6660JTXP02 from Vishay Siliconix is a military-qualified N-channel enhancement-mode MOSFET in TO-205AD (TO-39) package, rated for 60 V drain-source voltage, 1.3 Ω R_DS(on) at V_GS = 10 V, and 0.99 A continuous drain current at T_C = 25 °C. It serves as a low-voltage logic-level switch in solid-state relays and battery-operated hi-rel systems.

For engineers reviewing the 2N6660JTXP02 datasheet, 2N6660JTXP02 pinout, 2N6660JTXP02 application, or 2N6660JTXP02 equivalent, key selection criteria include its 1.7 V gate threshold, 35 pF input capacitance, 8 ns turn-on time, and JANTX-level qualification with soldered leads per MIL-PRF-19500/514.

Technical Context

This device operates as a single N-channel power switch with source-connected case (drain tied to metal can), requiring gate drive ≥1.7 V for conduction and supporting direct TTL/CMOS interfacing without buffer stages. Its low 20 °C/W junction-to-case thermal resistance enables stable operation up to 150 °C junction temperature under controlled heatsinking.

Switching performance is characterized by 8 ns turn-on and 8.5 ns turn-off times under V_DD = 25 V, R_L = 23 Ω, and R_g = 25 Ω conditions; dynamic parameters including C_iss = 35 pF and C_oss = 25 pF are specified at V_DS = 25 V and f = 1 MHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage before avalanche breakdown
R_DS(on)	1.3 Ω at V_GS = 10 V, I_D = 1 A - Low conduction loss enabling <1.3 W dissipation at 1 A
V_GS(th)	0.8–2.0 V - Ensures reliable turn-on with 3.3 V or 5 V logic-level drivers
t_ON/t_OFF	8 / 8.5 ns - Supports >100 MHz switching in pulsed control circuits
C_iss	35 pF - Minimizes gate drive energy and allows direct microcontroller driving
P_D (T_C = 25 °C)	6.25 W - Requires heatsink for sustained >0.99 A operation at ambient temperatures
I_D (continuous)	0.99 A at T_C = 25 °C - Derates to 0.62 A at T_C = 100 °C per thermal limit

Pinout & Package

2N6660JTXP02 uses the TO-205AD (TO-39 tall lid) metal-can package with drain internally connected to the case. The three-terminal top-view layout positions Gate (pin 1), Drain (pin 2), and Source (pin 3) radially around the central tab.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal; accepts 0–20 V drive; 35 pF input capacitance limits high-frequency slew rate
Pin 2 (D)	Drain	High-side switching node; electrically bonded to metal case; requires isolation from heatsink unless referenced to system ground
Pin 3 (S)	Source	Return path for load current; common reference for gate drive; ties to system ground in low-side configurations

Key Features

Feature	Design Value
MIL-PRF-19500/514 Qualified	JANTX-level screening includes burn-in, temperature cycling, and PIND testing-ensures reliability in aerospace and defense systems
Low V_GS(th)	1.7 V typical threshold enables direct interface with 3.3 V CMOS outputs without level-shifting circuitry
Low C_iss	35 pF input capacitance reduces gate charge (Q_g ≈ 12.5 pC), minimizing driver power and propagation delay
Case-Drain Connection	Drain tied to metal can provides low-inductance high-current path and simplifies thermal mounting when isolated
Fast Switching	8 ns t_ON supports precise pulse-width control in timing-critical solenoid and relay drivers

Applications

Solid-State Relays	Battery-Powered Instruments
Use Scenario: Replacing electromechanical relays in avionics power distribution units where vibration resistance and long life are mandatory. IC Role / Device Role / Timing Role: High-side load switch controlling 24 V DC bus to flight control actuators. Use Value: Eliminates contact bounce and wear; 60 V rating accommodates transients; 1.3 Ω R_DS(on) limits self-heating during continuous 0.8 A operation.	Use Scenario: Power gating of sensor modules in portable radiation detection equipment operating from Li-ion cells. IC Role / Device Role / Timing Role: Low-quiescent-load enable switch isolating analog front-end circuitry during sleep mode. Use Value: 1 μA I_DSS at 48 V ensures <10 nW leakage; 1.7 V V_GS(th) allows wake-up from ultra-low-power MCU GPIO.
TTL/CMOS Direct Drive Circuits	Hi-Rel Solenoid Drivers
Use Scenario: Driving indicator LEDs and small displays in military handheld radios without external transistor buffers. IC Role / Device Role / Timing Role: Logic-level N-channel switch sinking current from 3.3 V or 5 V digital outputs. Use Value: 0.99 A rating supports multiple parallel LEDs; fast 8 ns switching prevents visible flicker in PWM dimming.	Use Scenario: Actuating fuel shutoff valves in jet engine control systems requiring MIL-STD-810 compliance. IC Role / Device Role / Timing Role: Pulse-controlled power stage delivering 500 ms on-time bursts to 12 V solenoids. Use Value: JANTX qualification guarantees operation across –55 °C to +125 °C; 3 A pulsed current handles solenoid inrush.

Solid-State Relays

Battery-Powered Instruments

Use Scenario: Replacing electromechanical relays in avionics power distribution units where vibration resistance and long life are mandatory.

IC Role / Device Role / Timing Role: High-side load switch controlling 24 V DC bus to flight control actuators.

Use Value: Eliminates contact bounce and wear; 60 V rating accommodates transients; 1.3 Ω R_DS(on) limits self-heating during continuous 0.8 A operation.

Use Scenario: Power gating of sensor modules in portable radiation detection equipment operating from Li-ion cells.

IC Role / Device Role / Timing Role: Low-quiescent-load enable switch isolating analog front-end circuitry during sleep mode.

Use Value: 1 μA I_DSS at 48 V ensures <10 nW leakage; 1.7 V V_GS(th) allows wake-up from ultra-low-power MCU GPIO.

TTL/CMOS Direct Drive Circuits

Hi-Rel Solenoid Drivers

Use Scenario: Driving indicator LEDs and small displays in military handheld radios without external transistor buffers.

IC Role / Device Role / Timing Role: Logic-level N-channel switch sinking current from 3.3 V or 5 V digital outputs.

Use Value: 0.99 A rating supports multiple parallel LEDs; fast 8 ns switching prevents visible flicker in PWM dimming.

Use Scenario: Actuating fuel shutoff valves in jet engine control systems requiring MIL-STD-810 compliance.

IC Role / Device Role / Timing Role: Pulse-controlled power stage delivering 500 ms on-time bursts to 12 V solenoids.

Use Value: JANTX qualification guarantees operation across –55 °C to +125 °C; 3 A pulsed current handles solenoid inrush.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2N6661JTXP02	Higher V_DS = 80 V; R_DS(on) = 2.5 Ω at V_GS = 10 V; same TO-205AD package and JANTX qualification	Preferred where higher voltage margin is required, e.g., 48 V industrial buses with surge tolerance	Select 2N6661JTXP02 only if system transient voltage exceeds 60 V; otherwise 2N6660JTXP02 offers lower conduction loss
2N7000-E3	Commercial-grade; V_DS = 60 V; R_DS(on) = 5.0 Ω at V_GS = 10 V; SOT-23 package; no military screening	Suitable for non-critical consumer or lab equipment where cost and size outweigh reliability requirements	Use 2N7000-E3 only in benign environments with full derating; not acceptable for aerospace, defense, or safety-critical use

Compared with 2N6661JTXP02 and 2N7000-E3, the 2N6660JTXP02 uniquely balances JANTX reliability, 60 V rating, and 1.3 Ω on-resistance in a through-hole metal-can package-making it optimal for weight-constrained, high-reliability 24–36 V DC systems requiring direct logic drive.

Availability

2N6660JTXP02 is available at Aetrix Electronics and suitable for solid-state relays, battery-powered instruments, and TTL/CMOS direct-drive circuits requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 2N6660JTXP02 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix designs and manufactures discrete semiconductors including MOSFETs, diodes, and optoelectronics, with emphasis on high-reliability, high-performance power and signal components.

The 2N6660JTXP02 belongs to Vishay's military-qualified silicon power MOSFET product line, engineered specifically for ruggedized switching in aerospace, defense, and industrial control systems demanding MIL-PRF-19500 compliance.

FAQ

What is the gate threshold voltage range for the 2N6660JTXP02?

The 2N6660JTXP02 has a gate-source threshold voltage (V_GS(th)) range of 0.8 V minimum to 2.0 V maximum at I_D = 1 mA and V_DS = V_GS. At 125 °C, the upper limit extends to 2.5 V. This low-threshold design ensures consistent turn-on with standard 3.3 V or 5 V logic outputs without external level shifting, making the 2N6660JTXP02 ideal for direct microcontroller interfacing in compact embedded systems.

Is the drain of the 2N6660JTXP02 electrically connected to the case?

Yes, the drain of the 2N6660JTXP02 is internally bonded to the metal case in its TO-205AD (TO-39) package. This configuration requires electrical isolation between the case and heatsink unless the drain node is referenced to system ground. Proper insulating hardware must be used in high-side switch implementations to prevent short circuits, and thermal interface materials must maintain dielectric integrity at up to 60 V potential difference.

What is the maximum continuous drain current for the 2N6660JTXP02 at 100 °C case temperature?

The 2N6660JTXP02 supports a maximum continuous drain current of 0.62 A at T_C = 100 °C, derated from 0.99 A at T_C = 25 °C. This linear derating reflects its 20 °C/W junction-to-case thermal resistance and 150 °C maximum junction temperature limit. To sustain 0.62 A continuously, the device must be mounted on a heatsink capable of maintaining case temperature ≤100 °C under worst-case ambient and airflow conditions.

Does the 2N6660JTXP02 meet MIL-PRF-19500 requirements?

Yes, the 2N6660JTXP02 is manufactured and tested to MIL-PRF-19500/514 as a JANTX-qualified device, including screening for burn-in, temperature cycling, and PIND (Particle Impact Noise Detection). The "P02" suffix denotes soldered leads per MIL-STD-202, Method 208, and the part carries full DSCC certification. This qualifies the 2N6660JTXP02 for use in Class H and Class K applications where failure modes must be rigorously controlled.

How does the input capacitance of the 2N6660JTXP02 affect gate drive design?

The 2N6660JTXP02 specifies an input capacitance (C_iss) of 35 pF at V_DS = 25 V, enabling low-energy gate charging and compatibility with weak drive sources such as GPIO pins. With typical total gate charge Q_g ≈ 12.5 pC, rise/fall times remain sub-10 ns even with 25 Ω series gate resistance. This allows the 2N6660JTXP02 to be driven directly from microcontrollers without buffer stages-reducing BOM count and PCB area in space-constrained 2N6660JTXP02 applications.

2N6660JTXP02 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-205AD, TO-39-3 Metal Can

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 990mA (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 3Ohm @ 1A, 10V

Vgs(th) (Max) @ Id:: 2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 50 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 725mW (Ta), 6.25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-205AD (TO-39)

2N6660JTXP02 FAQ

1.How can I place an order for 2N6660JTXP02 through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N6660JTXP02 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N6660JTXP02 reliable?

The price and inventory of 2N6660JTXP02 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N6660JTXP02 is usually 5 days.

3.What payment methods are accepted for 2N6660JTXP02?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N6660JTXP02 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N6660JTXP02?

2N6660JTXP02 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N6660JTXP02 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N6660JTXP02?

For technical support, including 2N6660JTXP02 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N6660JTXP02 requirements.

6.How does Aetrix verify that 2N6660JTXP02 is sourced from the original manufacturer or authorized distributors?

All 2N6660JTXP02 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N6660JTXP02 meets industry standards.

7.What is the process for return or replacement of 2N6660JTXP02?

All 2N6660JTXP02 units undergo pre-shipment inspection (PSI). If there is an issue with 2N6660JTXP02, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N6660JTXP02 part is unused and in its original packaging.

Return procedure for 2N6660JTXP02:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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