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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
BUK763R1-40B,118 NEXPERIA BUK763R1-40B - 75A, 40V NXP Semiconductors	3,590	RFQ	Datasheet	TrenchMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	40 V	75A (Tc)	10V	3.1mOhm @ 25A, 10V	4V @ 1mA	94 nC @ 10 V	±20V	6808 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	D2PAK
BUK962R6-40E,118 MOSFET N-CH 40V 100A D2PAK NXP USA Inc.	604	RFQ	Datasheet	TrenchMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	40 V	100A (Tc)	5V, 10V	2.4mOhm @ 25A, 10V	2.1V @ 250µA	80.6 nC @ 32 V	±10V	10285 pF @ 25 V	-	263W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	D2PAK
BUK6C3R3-75C,118 NEXPERIA BUK6C3R3 - N-CHANNEL TR NXP Semiconductors	480	RFQ	Datasheet	TrenchMOS™	TO-263-7, D2PAK (6 Leads + Tab)	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	75 V	181A (Tc)	10V	3.4mOhm @ 90A, 10V	2.8V @ 1mA	253 nC @ 10 V	±16V	15800 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	D2PAK-7
BUK7C10-75AITE,118 NEXPERIA BUK7C10-75 - 75A, 75V, NXP Semiconductors	1,069	RFQ	Datasheet	TrenchMOS™	TO-263-7, D2PAK (6 Leads + Tab)	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	75 V	75A (Tc)	10V	10mOhm @ 50A, 10V	4V @ 1mA	121 nC @ 10 V	±20V	4700 pF @ 25 V	Current Sensing	272W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	D2PAK-7
PSMN009-100P,127 NEXPERIA PSMN009-100P - 75A, 100 NXP Semiconductors	291	RFQ	Datasheet	TrenchMOS™	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	100 V	75A (Tc)	10V	8.8mOhm @ 25A, 10V	4V @ 1mA	156 nC @ 10 V	±20V	8250 pF @ 25 V	-	230W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB
PSMN2R6-60PSQ NOW NEXPERIA PSMN2R6-60PSQ - 150 NXP USA Inc.	266	RFQ	Datasheet	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	60 V	150A (Tc)	10V	2.6mOhm @ 25A, 10V	4V @ 1mA	140 nC @ 10 V	±20V	7629 pF @ 25 V	-	326W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB
PSMN4R3-80PS,127 NEXPERIA PSMN4R3-80PS - 120A, 80 NXP Semiconductors	1,756	RFQ	Datasheet	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	80 V	120A (Tc)	10V	4.3mOhm @ 25A, 10V	4V @ 1mA	111 nC @ 10 V	±20V	8161 pF @ 40 V	-	306W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB
BUK7107-55AIE,118 NEXPERIA BUK7107 - N-CHANNEL TRE NXP Semiconductors	2,400	RFQ	Datasheet	TrenchMOS™	TO-263-5, D2PAK (4 Leads + Tab), TO-263BB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	55 V	75A (Tc)	10V	7mOhm @ 50A, 10V	4V @ 1mA	116 nC @ 10 V	±20V	4500 pF @ 25 V	Current Sensing	272W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	D2PAK
PSMN6R3-120PS PSMN6R3-120PS - N-CHANNEL 120V S NXP Semiconductors	319	RFQ	Datasheet	-	TO-220-3	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	120 V	70A (Ta)	10V	6.7mOhm @ 25A, 10V	4V @ 1mA	207.1 nC @ 10 V	±20V	11384 pF @ 60 V	-	405W (Ta)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB
BUK95180-100A,127 MOSFET N-CH 100V 11A TO220AB NXP USA Inc.	9,363	RFQ	Datasheet	TrenchMOS™	TO-220-3	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	11A (Tc)	4.5V, 10V	173mOhm @ 5A, 10V	2V @ 1mA	-	±15V	619 pF @ 25 V	-	54W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB

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