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FETs, MOSFETs

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
PMPB13XNE,115

PMPB13XNE,115

MOSFET N-CH 30V 8A DFN2020MD-6

NXP USA Inc.

6,716 0.00
RFQ
PMPB13XNE,115

Datasheet

- 6-XFDFN Exposed Pad Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 8A (Ta) 1.8V, 4.5V 16mOhm @ 8A, 4.5V 900mV @ 250µA 36 nC @ 4.5 V ±12V 2195 pF @ 15 V - 1.7W (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DFN1010B-6
PMPB33XN,115

PMPB33XN,115

MOSFET N-CH 30V 4.3A DFN2020MD-6

NXP USA Inc.

3,235 0.00
RFQ
PMPB33XN,115

Datasheet

- 6-XFDFN Exposed Pad Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 4.3A (Ta) 2.5V, 4.5V 47mOhm @ 4.3A, 4.5V 1.2V @ 250µA 7.6 nC @ 4.5 V ±12V 505 pF @ 15 V - 1.5W (Ta), 8.3W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DFN1010B-6
PSMN5R0-100PS,127

PSMN5R0-100PS,127

NOW NEXPERIA PSMN5R0-100PS - 120

NXP Semiconductors

8,850 0.00
RFQ
PSMN5R0-100PS,127

Datasheet

- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 5mOhm @ 25A, 10V 4V @ 1mA 170 nC @ 10 V ±20V 9900 pF @ 50 V - 338W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
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