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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

NXP Semiconductors PMPB13XNE,115

Name: PMPB13XNE,115
Brand: NXP Semiconductors
SKU: PMPB13XNE,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PMPB13XNE,115

Manufacturer:: NXP Semiconductors

Category:: FETs, MOSFETs

Package:: 6-XFDFN Exposed Pad

Datasheet:: PMPB13XNE,115.pdf

Description:: MOSFET N-CH 30V 8A DFN2020MD-6

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Product details

Overview

PMPB13XNE from NXP Semiconductors is a single N-channel Trench MOSFET in DFN2020MD-6 (SOT1220) package, rated for 30 V drain-source voltage, 11.3 A continuous drain current at 4.5 V gate drive and 25 °C ambient, and 13 mΩ typical R_DS(on) at V_GS = 4.5 V and I_D = 8 A. It serves as a high-efficiency charging switch or power management switch in portable electronics.

For engineers reviewing the PMPB13XNE datasheet, PMPB13XNE pinout, PMPB13XNE application, or PMPB13XNE equivalent, key selection criteria include its ultra-thin 2 × 2 × 0.65 mm leadless package, 2.2 kV HBM ESD rating, exposed drain pad for thermal performance, and verified R_DS(on) behavior across temperature and gate voltage.

Technical Context

This device employs Trench MOSFET technology to achieve low on-resistance and fast switching with Q_G(tot) = 24–36 nC and t_d(on)/t_r/t_d(off)/t_f = 12/30/54/49 ns under standard test conditions. Its gate threshold voltage (V_GS(th)) ranges from 0.4 V to 0.9 V, enabling compatibility with 1.8 V–4.5 V logic-level drive.

Thermal design is supported by R_th(j-sp) = 5–10 K/W to solder point and R_th(j-a) = 67–74 K/W on FR4 with 6 cm² drain pad, while safe operating area (SOA) is defined up to 32 A peak drain current and 30 V V_DS for pulse durations down to 10 µs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage before breakdown; defines use in ≤30 V power rails.
R_DS(on) @ V_GS=4.5 V	13 mΩ typ - Enables <150 mW conduction loss at 8 A, critical for battery-switch efficiency.
I_D continuous	11.3 A @ T_amb=25 °C - Validated with 6 cm² drain pad on FR4; derates to 5 A at 100 °C ambient.
Q_G(tot)	24–36 nC - Determines gate driver strength requirement; enables efficient 1–2 MHz switching in DC-DC converters.
V_GS(th)	0.4–0.9 V - Ensures turn-on with low-voltage microcontrollers (e.g., 1.8 V I/O), reducing need for level shifters.
ESD rating	2.2 kV HBM - Protects against handling damage during assembly without external TVS.
T_j max	150 °C - Sets thermal margin for sustained operation in compact portable enclosures.

Pinout & Package

Package: DFN2020MD-6 (SOT1220), 2.0 × 2.0 × 0.65 mm, leadless, thermally enhanced with exposed drain pad.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6, 7	Drain (D)	Five parallel drain terminals connected to exposed copper pad; provides low-inductance, high-current path and primary thermal conduction path to PCB.
3	Gate (G)	Single gate input; requires controlled drive to avoid oscillation due to low gate resistance (R_G = 2.1 Ω).
4, 8	Source (S)	Two source terminals; forms return path for load current and reference for gate drive; must be low-impedance to minimize V_GS error.

Key Features

Feature	Design Value
Exposed drain pad	Reduces R_th(j-sp) to 5–10 K/W, enabling >3× higher power dissipation vs. standard SOT-23 on same PCB area.
Tin-plated side pads	Supports automated optical inspection (AOI) of solder joints without X-ray, improving manufacturing yield verification.
2.2 kV HBM ESD protection	Eliminates need for discrete ESD diodes in charging switch paths, saving board space and BOM cost.
Ultra-thin 0.65 mm profile	Meets height constraints in slim smartphones and wearables where Z-axis clearance is limited to <0.7 mm.
Trench MOSFET architecture	Delivers 13 mΩ R_DS(on) at 4.5 V in 4 mm² footprint-25% lower on-resistance than planar equivalents at same voltage class.

Applications

Charging Switch	DC-DC Converter High-Side Switch
Use Scenario: Controls USB or adapter input to Li-ion battery in smartphones and tablets, enabling charge path management and reverse current blocking. IC Role / Device Role / Timing Role: N-channel power switch placed between input source and battery anode; operates in linear or saturated mode depending on charge stage. Use Value: Low 13 mΩ R_DS(on) minimizes voltage drop and heat generation during 2–3 A charging, extending battery runtime and reducing thermal stress on adjacent components.	Use Scenario: Used as high-side synchronous rectifier in buck converters for core voltage regulation in portable SoCs and PMICs. IC Role / Device Role / Timing Role: Fast-switching power FET driven by integrated gate controller; commutates current during PWM on-time with minimal conduction loss. Use Value: 24–36 nC total gate charge and 12–54 ns switching times support >1 MHz operation while maintaining <1% duty-cycle loss, improving converter efficiency above 90%.
Battery Power Management	Hard Disk Drive Power Control
Use Scenario: Isolates main battery from peripheral subsystems (e.g., display backlight, audio codec) to prevent standby leakage and enable rapid system wake/sleep transitions. IC Role / Device Role / Timing Role: Load switch providing controlled inrush current and overcurrent protection via external sense resistor or internal current limit. Use Value: Gate threshold of 0.4–0.9 V ensures reliable turn-on with 1.8 V GPIOs, eliminating level-shifter ICs and simplifying power sequencing in multi-rail systems.	Use Scenario: Supplies regulated 5 V or 12 V power to HDD spindle motor and actuator drivers in ultrabooks and NAS enclosures. IC Role / Device Role / Timing Role: Primary power delivery switch activated only during drive spin-up and data access; remains off during idle to reduce system quiescent current. Use Value: 150 °C maximum junction temperature and 32 A peak current rating allow safe handling of HDD inrush surges (up to 25 A for 10 µs), preventing thermal shutdown during mechanical startup.

Charging Switch

DC-DC Converter High-Side Switch

Use Scenario: Controls USB or adapter input to Li-ion battery in smartphones and tablets, enabling charge path management and reverse current blocking.

IC Role / Device Role / Timing Role: N-channel power switch placed between input source and battery anode; operates in linear or saturated mode depending on charge stage.

Use Value: Low 13 mΩ R_DS(on) minimizes voltage drop and heat generation during 2–3 A charging, extending battery runtime and reducing thermal stress on adjacent components.

Use Scenario: Used as high-side synchronous rectifier in buck converters for core voltage regulation in portable SoCs and PMICs.

IC Role / Device Role / Timing Role: Fast-switching power FET driven by integrated gate controller; commutates current during PWM on-time with minimal conduction loss.

Use Value: 24–36 nC total gate charge and 12–54 ns switching times support >1 MHz operation while maintaining <1% duty-cycle loss, improving converter efficiency above 90%.

Battery Power Management

Hard Disk Drive Power Control

Use Scenario: Isolates main battery from peripheral subsystems (e.g., display backlight, audio codec) to prevent standby leakage and enable rapid system wake/sleep transitions.

IC Role / Device Role / Timing Role: Load switch providing controlled inrush current and overcurrent protection via external sense resistor or internal current limit.

Use Value: Gate threshold of 0.4–0.9 V ensures reliable turn-on with 1.8 V GPIOs, eliminating level-shifter ICs and simplifying power sequencing in multi-rail systems.

Use Scenario: Supplies regulated 5 V or 12 V power to HDD spindle motor and actuator drivers in ultrabooks and NAS enclosures.

IC Role / Device Role / Timing Role: Primary power delivery switch activated only during drive spin-up and data access; remains off during idle to reduce system quiescent current.

Use Value: 150 °C maximum junction temperature and 32 A peak current rating allow safe handling of HDD inrush surges (up to 25 A for 10 µs), preventing thermal shutdown during mechanical startup.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3020LSD-13	Same 30 V rating and DFN2020 package but higher R_DS(on) (19 mΩ typ @ 4.5 V); no specified ESD rating.	Suitable for cost-sensitive DC-DC converters where 30% higher conduction loss is acceptable.	Select when ESD robustness is not required and thermal margin exceeds 10 °C.
SI2302DS-T1-BE3	Lower voltage (20 V), smaller SOT-23 package, 45 mΩ R_DS(on); lacks exposed drain pad and thermal specs.	Limited to low-power peripherals (e.g., LED drivers) where current <2 A and thermal budget is宽松.	Choose only for sub-2 A loads with ample board space for heatsinking; not drop-in for PMPB13XNE's 11.3 A capability.

Compared with DMN3020LSD-13 and SI2302DS-T1-BE3, PMPB13XNE delivers superior thermal performance via its exposed drain pad and lower R_DS(on), making it the preferred choice for high-current, space-constrained portable power switches requiring ESD resilience and stable operation up to 150 °C junction temperature.

Availability

PMPB13XNE is available at Aetrix Electronics and suitable for charging switch, DC-DC converter, and battery power management applications requiring stable component supply, consistent parametric performance, and long-term industrial availability.

Supply support for PMPB13XNE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer markets.

PMPB13XNE belongs to NXP's TrenchMOS family, engineered specifically for high-efficiency, low-voltage power switching in space- and thermally constrained portable electronics.

FAQ

What is the maximum continuous drain current rating for PMPB13XNE under standard PCB conditions?

The PMPB13XNE supports 11.3 A continuous drain current when mounted on an FR4 PCB with a 6 cm² tin-plated drain pad at 25 °C ambient temperature. This rating drops to 8 A at 25 °C ambient with no specified pad area, and further derates to 5 A at 100 °C ambient per the datasheet limiting values table.

Does PMPB13XNE require a gate resistor for stable switching in a 1 MHz DC-DC converter?

Yes - although PMPB13XNE has low intrinsic gate resistance (2.1 Ω), a series gate resistor (typically 2–10 Ω) is recommended to dampen ringing caused by PCB trace inductance and prevent shoot-through in synchronous buck topologies. The 24–36 nC total gate charge necessitates adequate driver current to meet 1 MHz timing requirements without excessive Miller plateau time.

Can PMPB13XNE be used as a direct replacement for SI2302DS-T1-BE3 in a 3.3 V logic-controlled load switch?

No - while both are N-channel MOSFETs, PMPB13XNE is not a direct replacement for SI2302DS-T1-BE3 due to differing package (DFN2020MD-6 vs. SOT-23), pinout, thermal design, and voltage rating (30 V vs. 20 V). Its lower R_DS(on) and higher current capability demand revised layout and thermal validation; substitution requires full electrical and thermal requalification.

What is the significance of the "1M" marking code on PMPB13XNE devices?

The "1M" marking code on PMPB13XNE identifies the specific device variant per NXP's ordering information table and is used for traceability and quality control. It corresponds exclusively to the PMPB13XNE type number and does not encode date code, lot, or revision - those are tracked separately in NXP's internal manufacturing records.

How does the exposed drain pad of PMPB13XNE improve thermal performance compared to standard DFN packages?

The exposed drain pad of PMPB13XNE reduces thermal resistance from junction to solder point (R_th(j-sp)) to 5–10 K/W, nearly half that of non-exposed DFN variants. This allows more heat to transfer directly into the PCB copper, enabling higher continuous current (11.3 A vs. ~6 A typical for non-exposed equivalents) without exceeding 150 °C junction temperature on standard FR4 layouts.

PMPB13XNE,115 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: 6-XFDFN Exposed Pad

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 16mOhm @ 8A, 4.5V

Vgs(th) (Max) @ Id:: 900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 36 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 2195 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1.7W (Ta), 12.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DFN1010B-6

PMPB13XNE,115 FAQ

1.How can I place an order for PMPB13XNE,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PMPB13XNE,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMPB13XNE,115 reliable?

The price and inventory of PMPB13XNE,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMPB13XNE,115 is usually 5 days.

3.What payment methods are accepted for PMPB13XNE,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMPB13XNE,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMPB13XNE,115?

PMPB13XNE,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMPB13XNE,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMPB13XNE,115?

For technical support, including PMPB13XNE,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMPB13XNE,115 requirements.

6.How does Aetrix verify that PMPB13XNE,115 is sourced from the original manufacturer or authorized distributors?

All PMPB13XNE,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMPB13XNE,115 meets industry standards.

7.What is the process for return or replacement of PMPB13XNE,115?

All PMPB13XNE,115 units undergo pre-shipment inspection (PSI). If there is an issue with PMPB13XNE,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMPB13XNE,115 part is unused and in its original packaging.

Return procedure for PMPB13XNE,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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