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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IRF6797MTRPBF IRF6797 - 12V-300V N-CHANNEL POW Infineon Technologies	16,950	RFQ	Datasheet	HEXFET®	DirectFET™ Isometric MX	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	25 V	36A (Ta), 210A (Tc)	4.5V, 10V	1.4mOhm @ 38A, 10V	2.35V @ 150µA	68 nC @ 4.5 V	±20V	5790 pF @ 13 V	-	2.8W (Ta), 89W (Tc)	-40°C ~ 150°C (TJ)	-	-	Surface Mount	DIRECTFET™ MX
IRF6797MTRPBF MOSFET N-CH 25V 36A/210A DIRECT International Rectifier	11,833	RFQ	Datasheet	HEXFET®	DirectFET™ Isometric MX	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	25 V	36A (Ta), 210A (Tc)	4.5V, 10V	1.4mOhm @ 38A, 10V	2.35V @ 150µA	68 nC @ 4.5 V	±20V	5790 pF @ 13 V	-	2.8W (Ta), 89W (Tc)	-40°C ~ 150°C (TJ)	-	-	Surface Mount	DIRECTFET™ MX
AUIRF1010EZS AUIRF1010 - 55V-60V N-CHANNEL AU Infineon Technologies	412	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	60 V	75A (Tc)	10V	8.5mOhm @ 51A, 10V	4V @ 250µA	86 nC @ 10 V	±20V	2810 pF @ 25 V	-	140W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-3
GC20N65FD MOSFET N-CH 650V 20A 40W TO-220 Goford Semiconductor	10,000	RFQ	Datasheet	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	20A (Tc)	10V	190mOhm @ 10A, 10V	5V @ 250µA	39 nC @ 10 V	±30V	1729 pF @ 100 V	-	40W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220F
IRF7580MTRPBF IRF7580 - 12V-300V N-CHANNEL POW International Rectifier	7,423	RFQ	Datasheet	StrongIRFET™	DirectFET™ Isometric ME	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	60 V	114A (Tc)	6V, 10V	3.6mOhm @ 70A, 10V	3.7V @ 150µA	180 nC @ 10 V	±20V	6510 pF @ 25 V	-	115W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	DirectFET™ Isometric ME
FQPF6N80T MOSFET N-CH 800V 3.3A TO220F Fairchild Semiconductor	3,715	RFQ	Datasheet	QFET®	TO-220-3 Full Pack	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	800 V	3.3A (Tc)	10V	1.95Ohm @ 1.65A, 10V	5V @ 250µA	31 nC @ 10 V	±30V	1500 pF @ 25 V	-	51W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220F-3
IRF7580MTRPBF IRF7580 - 12V-300V N-CHANNEL POW Infineon Technologies	1,536	RFQ	Datasheet	StrongIRFET™	DirectFET™ Isometric ME	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	60 V	114A (Tc)	6V, 10V	3.6mOhm @ 70A, 10V	3.7V @ 150µA	180 nC @ 10 V	±20V	6510 pF @ 25 V	-	115W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	DirectFET™ Isometric ME
AUIRL3705ZL MOSFET N-CH 55V 75A TO262 International Rectifier	8,871	RFQ	Datasheet	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	55 V	75A (Tc)	-	8mOhm @ 52A, 10V	3V @ 250µA	60 nC @ 5 V	-	2880 pF @ 25 V	-	130W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-262
FQPF8N90C POWER FIELD-EFFECT TRANSISTOR, 6 Fairchild Semiconductor	2,796	RFQ	Datasheet	QFET®	TO-220-3 Full Pack	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	900 V	6.3A (Tc)	10V	1.9Ohm @ 3.15A, 10V	5V @ 250µA	45 nC @ 10 V	±30V	2080 pF @ 25 V	-	60W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220F
IRF1407PBF IRF1407 - 12V-300V N-CHANNEL POW International Rectifier	1,000	RFQ	Datasheet	HEXFET®	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	75 V	130A (Tc)	10V	7.8mOhm @ 78A, 10V	4V @ 250µA	250 nC @ 10 V	±20V	5600 pF @ 25 V	-	330W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB
AUIRFS8403 MOSFET N-CH 40V 123A D2PAK International Rectifier	7,413	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	40 V	123A (Tc)	10V	3.3mOhm @ 70A, 10V	3.9V @ 100µA	93 nC @ 10 V	±20V	3183 pF @ 25 V	-	99W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-3
AUIRFS8403 AUIRFS8403 - 20V-40V N-CHANNEL A Infineon Technologies	6,000	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	40 V	123A (Tc)	10V	3.3mOhm @ 70A, 10V	3.9V @ 100µA	93 nC @ 10 V	±20V	3183 pF @ 25 V	-	99W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-3
FDPF44N25TRDTU MOSFET N-CH 250V 44A TO220F Fairchild Semiconductor	800	RFQ	Datasheet	UniFET™	TO-220-3 Full Pack, Formed Leads	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	250 V	44A (Tc)	10V	69mOhm @ 22A, 10V	5V @ 250µA	61 nC @ 10 V	±30V	2870 pF @ 25 V	-	38W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220F (LG-Formed)
AUIRFS8403TRL AUIRFS8403 - 20V-40V N-CHANNEL A International Rectifier	800	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	40 V	123A (Tc)	10V	3.3mOhm @ 70A, 10V	3.9V @ 100µA	93 nC @ 10 V	±20V	3183 pF @ 25 V	-	99W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-3
BUK763R1-40B,118 NEXPERIA BUK763R1-40B - 75A, 40V NXP Semiconductors	3,590	RFQ	Datasheet	TrenchMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	40 V	75A (Tc)	10V	3.1mOhm @ 25A, 10V	4V @ 1mA	94 nC @ 10 V	±20V	6808 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	D2PAK
AM7410N MOSFET N-CH 100V 15A DFN5X6 Analog Power Inc.	1,500	RFQ	Datasheet	-	8-PowerVDFN	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	100 V	15A (Ta)	5.5V, 10V	15mOhm @ 12A, 10V	1V @ 250µA	56 nC @ 5.5 V	±20V	4221 pF @ 15 V	-	5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-DFN (5x6)
BUK962R6-40E,118 MOSFET N-CH 40V 100A D2PAK NXP USA Inc.	604	RFQ	Datasheet	TrenchMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	40 V	100A (Tc)	5V, 10V	2.4mOhm @ 25A, 10V	2.1V @ 250µA	80.6 nC @ 32 V	±10V	10285 pF @ 25 V	-	263W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	D2PAK
GC20N65T MOSFET N-CH 650V 20A TO-220 Goford Semiconductor	4,000	RFQ	Datasheet	Cool MOS™	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	-	20A (Tc)	10V	170mOhm @ 10A, 10V	4.5V @ 250µA	-	±30V	-	-	151W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220
FQB27N25TM-F085 FQB27N25 - N-CHANNEL ULTRAFET 25 Fairchild Semiconductor	5,600	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	250 V	25.5A (Tc)	10V	131mOhm @ 25.5A, 10V	5V @ 250µA	49 nC @ 10 V	±30V	1800 pF @ 25 V	-	417W (Tc)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-263 (D2PAK)
FDI9406-F085 FDI9406 - N-CHANNEL POWERTRENCH Fairchild Semiconductor	5,600	RFQ	Datasheet	PowerTrench®	TO-262-3 Long Leads, I2PAK, TO-262AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	40 V	110A (Tc)	10V	2.2mOhm @ 80A, 10V	4V @ 250µA	138 nC @ 10 V	±20V	7710 pF @ 25 V	-	176W (Tj)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	I2PAK (TO-262)

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