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Infineon Technologies AUIRF1010EZS
- Part No.:
- AUIRF1010EZS
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
AUIRF1010EZS.pdf
- Description:
- AUIRF1010 - 55V-60V N-CHANNEL AU
- Quantity:
- Payment:
- Shipping:
Inventory:412
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Product details
Overview
AUIRF1010EZS from Infineon Technologies (formerly International Rectifier) is an automotive-grade N-channel HEXFET® Power MOSFET in D2Pak (TO-263) package, rated for 60V V(BR)DSS, 8.5mΩ max RDS(on) at 10V VGS, and 75A continuous drain current (package-limited). It features 175°C junction temperature rating, fast switching (tr = 90ns, tf = 54ns), and repetitive avalanche capability-designed for high-efficiency DC-DC converters and motor control stages in engine management and body electronics.
For engineers reviewing the AUIRF1010EZS datasheet, AUIRF1010EZS pinout, AUIRF1010EZS application, or AUIRF1010EZS equivalent, key selection criteria include its low on-resistance under automotive thermal constraints, validated AEC-Q101 qualification, unclamped inductive switching robustness, and D2Pak thermal performance with RθJC = 1.11°C/W.
Technical Context
This MOSFET employs advanced silicon processing to achieve ultra-low RDS(on) per die area while maintaining ruggedness for automotive transients. Its gate charge profile (Qg = 58–86nC, Qgd = 21–32nC) supports efficient high-frequency PWM operation up to 100kHz in synchronous buck topologies.
The integrated body diode exhibits trr = 41–62ns and Qrr = 54–81nC, enabling reliable freewheeling in inductive loads. Repetitive avalanche energy (EAR) is characterized across pulse width and starting junction temperature, with validated operation up to TJ = 175°C under defined L = 0.077mH, RG = 25Ω conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 60V - Withstands 60V drain-source breakdown; suitable for 48V automotive systems with margin against load dump transients. |
| RDS(on) max | 8.5mΩ @ VGS = 10V, TJ = 25°C - Enables <1W conduction loss at 75A, critical for thermally constrained under-hood modules. |
| ID (Package) | 75A @ TC = 25°C - Package-limited continuous current; defines heatsink sizing requirement for steady-state operation. |
| EAS (tested) | 99mJ - Single-pulse avalanche energy verified per JEDEC JESD24-11; supports unclamped inductive turn-off without failure. |
| TJ max | 175°C - Extended junction temperature rating enables operation in high-ambient environments like engine compartments. |
| Qg / Qgd | 58–86nC / 21–32nC - Low Miller charge reduces switching losses and improves noise immunity in high-dV/dt applications. |
| AEC-Q101 | Qualified - Fully compliant with AEC-Q101-005 (reliability), -002 (ESD), and -001 (HBM); certified for automotive production use. |
Pinout & Package
Package: D2Pak (TO-263), surface-mount with exposed drain pad for enhanced thermal transfer to PCB copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main power output terminal | Electrically connected to exposed metal tab; must be soldered to large copper pour for thermal and electrical integrity. |
| Source | Power return path | Low-inductance source connection essential for minimizing shoot-through risk and EMI in half-bridge configurations. |
| Gate | Control input | High-impedance MOSFET gate requiring <200nA leakage handling; sensitive to ESD and requires RC snubbing in high-noise environments. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 6.8mΩ typical at 10V VGS - Reduces conduction loss by >30% vs. legacy 12mΩ automotive MOSFETs at same current density. |
| 175°C operation | Rated junction temperature - Eliminates derating penalties in ambient >125°C environments, simplifying thermal design. |
| Repetitive avalanche | Validated up to TJmax - Enables robustness against inductive kickback in motor drives without external clamping diodes. |
| Lead-free & RoHS | Compliant per EU Directive 2011/65/EU - Meets automotive supply chain material restrictions without performance trade-offs. |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | Automotive HVAC Blower Motor Controller |
|---|---|
Use Scenario: High-side switching of 12V fuel injectors with peak currents up to 60A and 1ms pulse widths. IC Role / Device Role / Timing Role: Main power switch in saturated-mode driver stage; handles repetitive inductive turn-off stress. Use Value: 8.5mΩ RDS(on) limits voltage drop to <500mV at 60A, preserving injector solenoid activation margin under cold-cranking conditions. |
Use Scenario: Low-side PWM control of 24V blower motors in climate control systems, operating continuously at 40–65°C ambient. IC Role / Device Role / Timing Role: Synchronous rectifier in H-bridge motor drive; switches at 20kHz with minimal switching loss. Use Value: 90ns rise time and 54ns fall time enable clean edge transitions, reducing audible motor whine and EMI emissions. |
| 48V Mild Hybrid DC-DC Converter | Automotive LED Headlamp Matrix Driver |
Use Scenario: Primary-side synchronous rectifier in 48V-to-12V bidirectional buck-boost converter for start-stop systems. IC Role / Device Role / Timing Role: High-current, high-frequency power switch; operates with 100kHz PWM and 50% duty cycle. Use Value: 1.11°C/W RθJC allows direct mounting to aluminum heatsink, sustaining 75A continuous current without exceeding 175°C TJ. |
Use Scenario: Individual channel switch for adaptive LED headlamp pixel arrays, delivering 3A per string with precise dimming. IC Role / Device Role / Timing Role: Fast-switching current sink controlling LED current via PWM at >1kHz. Use Value: Body diode trr = 41ns ensures rapid reverse recovery during PWM dead-time, preventing cross-conduction in multi-string layouts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N6F7 | 60V, 2.2mΩ RDS(on), DFN5x6 package; lower RDS(on) but 55A package limit and no AEC-Q101 certification. | Preferred for space-constrained consumer DC-DC; unsuitable for automotive production due to missing qualification. | Select only for non-automotive, board-level space-limited designs where qualification is not required. |
| IRF1010E | 60V, 10.5mΩ RDS(on), TO-220AB package; identical silicon but industrial grade, 150°C TJ max, no AEC-Q101. | Acceptable for aftermarket or non-safety-critical 12V systems; lacks automotive reliability validation and thermal margin. | Use only when cost is primary constraint and AEC-Q101 compliance is not mandated by OEM specification. |
Compared with STL220N6F7 and IRF1010E, AUIRF1010EZS uniquely delivers automotive qualification, 175°C operation, and D2Pak thermal performance-making it the sole choice for production-grade 48V/12V power conversion and motor control where reliability and thermal headroom are non-negotiable.
Availability
AUIRF1010EZS is available at Aetrix Electronics and suitable for engine control units, HVAC motor drivers, 48V mild hybrid converters, and adaptive LED lighting systems requiring stable component supply across automotive production lifecycles.
Supply support for AUIRF1010EZS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive electronics, and industrial control solutions.
AUIRF1010EZS belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability, high-current switching in harsh-temperature vehicle subsystems including powertrain, chassis, and body electronics.
FAQ
What is the maximum continuous drain current for AUIRF1010EZS at 100°C case temperature?
At TC = 100°C, the continuous drain current is 60A (silicon-limited), as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 75A rating at 25°C case temperature, based on RθJC = 1.11°C/W and TJmax = 175°C. Operation above this current requires active cooling or reduced duty cycle.
Does AUIRF1010EZS require a gate resistor for automotive ECU applications?
Yes-a gate resistor (typically 10–25Ω) is required to dampen ringing, control dV/dt, and prevent parasitic oscillation during fast switching. The device's Qgd = 21–32nC and low gate threshold (2.0–4.0V) make it susceptible to noise-induced turn-on without proper gate drive impedance matching.
Can AUIRF1010EZS replace AUIRF1010EL in a D2Pak footprint?
No-AUIRF1010EL uses TO-262 (straight-leaded) package with different leadframe geometry and thermal interface. Although both share identical silicon, the D2Pak (AUIRF1010EZS) has an exposed drain pad requiring soldered thermal pad, whereas TO-262 relies on through-hole mounting and case-to-heatsink contact. Footprint and assembly process are incompatible.
Is the body diode in AUIRF1010EZS suitable for synchronous rectification?
Yes-the body diode is characterized with VSD = 1.3V max and trr = 41–62ns, making it viable for synchronous rectification in low-voltage (<24V), medium-frequency (<100kHz) applications. However, for optimal efficiency, external Schottky diodes or dedicated synchronous controllers are recommended above 50kHz due to Qrr = 54–81nC limitations.
AUIRF1010EZS Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 8.5mOhm @ 51A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 86 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2810 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 140W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO263-3
AUIRF1010EZS FAQ
1.How can I place an order for AUIRF1010EZS through Aetrix?
Please submit a Request for Quotation (RFQ) for AUIRF1010EZS on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AUIRF1010EZS reliable?
The price and inventory of AUIRF1010EZS are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF1010EZS is usually 5 days.
3.What payment methods are accepted for AUIRF1010EZS?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF1010EZS transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AUIRF1010EZS?
AUIRF1010EZS orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AUIRF1010EZS order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AUIRF1010EZS?
For technical support, including AUIRF1010EZS datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF1010EZS requirements.
6.How does Aetrix verify that AUIRF1010EZS is sourced from the original manufacturer or authorized distributors?
All AUIRF1010EZS products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF1010EZS meets industry standards.
7.What is the process for return or replacement of AUIRF1010EZS?
All AUIRF1010EZS units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF1010EZS, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AUIRF1010EZS part is unused and in its original packaging.
Return procedure for AUIRF1010EZS:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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