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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
APT15DQ120KG DIODE GP 1.2KV 15A TO220 Microchip Technology	718	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	1200 V	15A	3.3 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	240 ns	100 µA @ 1200 V	-	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
APT15D60KG DIODE GP 600V 15A TO220 Microchip Technology	88	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	600 V	15A	1.8 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	80 ns	250 µA @ 600 V	-	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
MSC010SDA070K DIODE SIL CARB 700V 10A TO220-2 Microchip Technology	55	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	700 V	10A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	-	-	-	-	Through Hole	TO-220-2	-
JANTX1N6638 DIODE GEN PURP 125V 300MA D5B Microchip Technology	80	RFQ	Datasheet	-	D, Axial	Bulk	Active	Standard	125 V	300mA	1.1 V @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	20 ns	500 nA @ 125 V	-	Military	MIL-PRF-19500/578	Through Hole	D-5D	-65°C ~ 175°C
JANTX1N5418 DIODE GEN PURP 400V 3A AXIAL Microchip Technology	75	RFQ	Datasheet	-	B, Axial	Bulk	Active	Standard	400 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	1 µA @ 400 V	-	Military	MIL-PRF-19500/411	Through Hole	B, Axial	-65°C ~ 175°C
JANTX1N5550 DIODE GEN PURP 200V 5A AXIAL Microchip Technology	83	RFQ	Datasheet	-	B, Axial	Bulk	Active	Standard	200 V	5A	1.2 V @ 9 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	1 µA @ 200 V	-	Military	MIL-PRF-19500/420	Through Hole	B, Axial	-65°C ~ 175°C
JANTX1N5553 DIODE GEN PURP 800V 5A AXIAL Microchip Technology	91	RFQ	Datasheet	-	B, Axial	Bulk	Active	Standard	800 V	5A	1.3 V @ 9 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	1 µA @ 800 V	-	Military	MIL-PRF-19500/420	Through Hole	B, Axial	-65°C ~ 175°C
APT100D60B2G DIODE GEN PURP 600V 100A TO247 Microchip Technology	46	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	600 V	100A	-	-	-	-	-	-	-	Through Hole	TO-247	-
MSC020SDA120B DIODE SIL CARB 1.2KV 49A TO247 Microchip Technology	37	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	49A	1.8 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	1130pF @ 1V, 1MHz	-	-	Through Hole	TO-247	-55°C ~ 175°C
MSC050SDA070B DIODE SIL CARBIDE 700V 50A TO247 Microchip Technology	59	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	700 V	50A	1.5 V @ 50 A	No Recovery Time > 500mA (Io)	0 ns	-	-	-	-	Through Hole	TO-247	-

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