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Microchip Technology APT100D60B2G

Part No.:
APT100D60B2G
Manufacturer:
Microchip Technology
Category:
Single Diodes
Package:
TO-247-2
Datasheet:
AetrixAPT100D60B2G.pdf
Description:
DIODE GEN PURP 600V 100A TO247
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:46

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Product details

Overview

APT100D60B2G from Microsemi is an ultrasoft recovery 600V, 100A rectifier diode in TO-247 package, optimized for ZVS/ZCS topologies and resonant-mode SMPS. It delivers 487 ns reverse recovery time (trr) at 100A/–200A/µs, 2328 nC Qrr at 25°C, and 1.25–1.6 V forward voltage at 100A, enabling snubberless operation in high-frequency inverters.

For engineers reviewing the APT100D60B2G datasheet, APT100D60B2G pinout, APT100D60B2G application, or APT100D60B2G equivalent, key selection criteria include soft recovery performance under high diF/dt, thermal resistance (RθJC = 0.34°C/W), junction temperature range (–55°C to +175°C), and compatibility with phase-shifted bridge and induction heating designs.

Technical Context

This diode employs a proprietary ultra-soft recovery structure to minimize reverse recovery current overshoot and ringing. Its trr remains stable across wide diF/dt ranges (100–1000 A/µs) and junction temperatures (25°C to 125°C), supporting reliable zero-voltage switching in hard-switched and resonant converters.

Designed for anti-parallel use with IGBTs/MOSFETs, it sustains 600V blocking capability while maintaining low leakage (25 µA at 600V, 25°C) and low junction capacitance (97 pF at 200V). The TO-247 package provides direct heat sink mounting via cathode tab and supports high RMS current (131 A) under 50% duty cycle square wave conditions.

Key Specifications

ParameterValue and Actual Design Meaning
VR / VRRM600 V DC / peak repetitive reverse voltage - enables use in 400V AC input rectification and 600V bus applications without derating.
IF(AV)100 A at TC = 124°C, 50% duty - supports continuous conduction mode operation in high-power industrial PSUs.
trr (100A, –200A/µs)487 ns at 25°C - ensures minimal turn-off loss and EMI in 50–100 kHz resonant converters.
Qrr (100A, –200A/µs)2328 nC at 25°C - reduces switching stress on companion switches and eliminates need for external snubbers.
VF (100A)1.25–1.6 V - lowers conduction loss and improves system efficiency vs. standard fast recovery diodes.
RθJC0.34 °C/W - allows direct thermal coupling to heatsink for high-power density layouts without forced air.
TJ Range–55°C to +175°C - supports operation in harsh environments including motor drives and induction heating enclosures.

Pinout & Package

APT100D60B2G uses the industry-standard TO-247 package with isolated metal tab (cathode). Mounting torque: 10 lb·in (1.1 N·m). Cathode is electrically connected to the case and must be insulated from heatsink unless referenced to system ground.

Pin/TerminalCircuit RoleDesign Meaning
1 (Lead)AnodeConnects to positive side of AC input or switch node; carries full forward current during conduction.
2 (Lead)AnodeSecond anode lead for parallel connection or enhanced current sharing; not internally redundant.
Case (Back)CathodePrimary cathode terminal; thermally and electrically coupled to heatsink; requires insulating pad if heatsink is grounded.

Key Features

FeatureDesign Value
Ultrasoft Recoverytrr ≤ 487 ns and IRRM ≤ 11 A at 100A/–200A/µs - suppresses voltage spikes and EMI in high-diF/dt switching.
Low Forward VoltageVF = 1.25 V typ. at 100A, 25°C - reduces conduction losses by ~15% vs. standard FRDs with comparable rating.
High Thermal ConductivityRθJC = 0.34°C/W - enables >100W dissipation with passive cooling in compact industrial power modules.
Robust Junction Temp RangeRated for continuous operation up to +175°C - supports integration into sealed, high-ambient-temperature systems like EV chargers.
RoHS Compliant FinishPb-free terminal plating (e3: 100% Sn) - meets global environmental compliance without sacrificing solderability or wire-bond reliability.

Applications

Induction Heating SystemsPhase-Shifted Full-Bridge Converters

Use Scenario: High-frequency (20–100 kHz) resonant tank circuits generating localized heating in cooktops and industrial metal processing.

IC Role / Device Role / Timing Role: Anti-parallel freewheeling diode across IGBTs, providing low-loss commutation and minimizing reactive energy loss.

Use Value: Ultrasoft recovery (Qrr = 2328 nC) prevents IGBT overvoltage during turn-on, extending device lifetime and reducing filter component count.

Use Scenario: Telecom and server PSUs requiring high efficiency (>94%) and high power density at 48V output.

IC Role / Device Role / Timing Role: Synchronous rectification path in secondary-side ZVS operation, handling 100A average current with minimal conduction loss.

Use Value: VF = 1.25 V at 100A lowers secondary-side loss by ~2.5 W per diode vs. standard 1.45 V FRD, improving thermal margin.

Motor Drive InvertersResonant LLC Converters

Use Scenario: 3-phase industrial VFDs driving pumps, compressors, and conveyors with regenerative braking.

IC Role / Device Role / Timing Role: Anti-parallel diode across 600V IGBTs in inverter legs, conducting regenerated energy back to DC bus.

Use Value: Stable trr < 716 ns at 125°C ensures predictable commutation timing across full operating temperature range.

Use Scenario: High-efficiency AC/DC adapters and LED drivers operating in resonant mode above 100 kHz.

IC Role / Device Role / Timing Role: Output rectifier sustaining 131 A RMS current under 50% duty square wave, with low Cj (97 pF) minimizing capacitive loss.

Use Value: Low junction capacitance and soft recovery reduce switching noise and improve EMI compliance without added filtering.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultra-soft recovery diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IXYS MBR10060CT600V/100A, TO-247, trr ≈ 65 ns (fast, not ultrasoft), Qrr ≈ 420 nC - significantly lower recovery charge but higher diF/dt sensitivity and ringing risk.Better for hard-switched PFC stages; unsuitable for ZVS resonant topologies due to abrupt recovery edge.Select only when low Qrr dominates over softness; verify snubber requirements in target topology.
Vishay VS-100BGH06600V/100A, TO-247, trr = 500 ns (25°C), Qrr = 2500 nC - near-identical dynamic specs but higher VF (1.75 V typ.) and RθJC (0.45°C/W).Acceptable drop-in for thermal-limited designs where 0.11°C/W higher thermal resistance is tolerable.Prefer when supply chain diversification is needed; expect ~0.5 W higher conduction loss at 100A.

Compared with MBR10060CT and VS-100BGH06, APT100D60B2G offers the lowest VF and best thermal resistance among 600V/100A ultrasoft diodes, making it optimal for high-efficiency, high-temperature, and snubberless resonant converter designs.

Availability

APT100D60B2G is available at Aetrix Electronics and suitable for induction heating systems, phase-shifted bridge power supplies, and motor drive inverters requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for APT100D60B2G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog, mixed-signal, and power discrete solutions for aerospace, defense, industrial, and communications markets.

The APT100D60B2G belongs to Microsemi's Ultrasoft Recovery Rectifier family, engineered specifically for zero-voltage and zero-current switching topologies where soft recovery, low ringing, and high thermal robustness are critical.

FAQ

What is the maximum junction temperature rating for APT100D60B2G?

The APT100D60B2G is rated for continuous operation from –55°C to +175°C junction temperature. This extended range supports deployment in sealed enclosures, high-ambient industrial environments, and automotive under-hood applications where thermal management is constrained. Derating curves in Figure 7 confirm 100A average current capability at TC = 124°C, validating its suitability for high-power-density designs.

Does APT100D60B2G have a built-in thermal protection feature?

No, APT100D60B2G is a passive rectifier diode and does not include integrated thermal protection circuitry. Thermal management relies entirely on external design - proper heatsinking, mounting torque (10 lb·in), and thermal interface material. Its RθJC of 0.34°C/W and 175°C max TJ enable robust thermal performance when implemented per Microsemi's mechanical recommendations in the datasheet.

Is APT100D60B2G pin-compatible with APT100DL60B(G)?

Yes, APT100D60B2G shares identical TO-247 pinout, mechanical dimensions, and terminal configuration with APT100DL60B(G). Both feature dual anode leads (pins 1 and 2) and cathode-connected case. The "2G" suffix denotes RoHS-compliant plating (e3: 100% Sn), whereas "G" indicates Pb-free finish per earlier revision - no electrical or layout changes are required for substitution.

What is the reverse recovery charge (Qrr) of APT100D60B2G at elevated temperature?

At TC = 125°C and test conditions IF = 100A, diF/dt = –200A/µs, VR = 400V, the APT100D60B2G exhibits Qrr = 5954 nC. This value - more than double the 2328 nC measured at 25°C - reflects increased minority carrier lifetime at high temperature and must be accounted for in snubber sizing and switch stress analysis for high-ambient designs.

Can APT100D60B2G be used in surface-mount designs?

No, APT100D60B2G is packaged exclusively in TO-247 and is not compatible with surface-mount assembly. For SMT implementation, Microsemi offers the functionally equivalent APT100DL60S(G) in D3PAK package. That variant shares identical electrical specifications but requires re-layout for thermal pad routing and different reflow profile validation.

APT100D60B2G Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Series:
-
Package/Case:
TO-247-2
Packaging:
Tube
Product Status:
Active
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
600 V
Current - Average Rectified (Io):
100A
Voltage - Forward (Vf) (Max) @ If:
-
Speed:
-
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
-
Capacitance @ Vr, F:
-
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-247
Operating Temperature - Junction:
-

APT100D60B2G FAQ

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5.How can I obtain technical support or documentation for APT100D60B2G?

For technical support, including APT100D60B2G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your APT100D60B2G requirements.

6.How does Aetrix verify that APT100D60B2G is sourced from the original manufacturer or authorized distributors?

All APT100D60B2G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that APT100D60B2G meets industry standards.

7.What is the process for return or replacement of APT100D60B2G?

All APT100D60B2G units undergo pre-shipment inspection (PSI). If there is an issue with APT100D60B2G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The APT100D60B2G part is unused and in its original packaging.

Return procedure for APT100D60B2G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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