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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
WNSC2D201200W6Q DIODE SIL CARB 1.2KV 20A TO247-2 WeEn Semiconductors	2,379	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	20A	1.8 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	845pF @ 1V, 1MHz	-	-	Through Hole	TO-247-2	175°C
GP3D012A065A DIODE SIL CARB 650V 12A TO220-2 SemiQ	6,993	RFQ	Datasheet	Amp+™	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.5 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 650 V	572pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
DPG60IM300PC-TUB DIODE GEN PURP 300V 60A TO263 IXYS	9,826	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	Standard	300 V	60A	1.43 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	1 µA @ 300 V	80pF @ 150V, 1MHz	-	-	Surface Mount	TO-263 (D2PAK)	-55°C ~ 175°C
IRD3910 DIODE GEN PURP 100V 30A DO203AB Vishay General Semiconductor - Diodes Division	2,151	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Obsolete	Standard	100 V	30A	1.8 V @ 62.8 A	Fast Recovery =< 500ns, > 200mA (Io)	350 ns	80 µA @ 100 V	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-40°C ~ 125°C
GP3D008A065D DIODE SIC 650V 8A TO263-2L SemiQ	3,278	RFQ	Datasheet	-	-	Tape & Reel (TR)	Active	-	650 V	8A	-	-	-	-	-	-	-	-	-	-
BYW77P-200 DIODE GEN PURP 200V 25A SOD93-2 STMicroelectronics	7,937	RFQ	Datasheet	-	SOD-93-2	Tube	Obsolete	Standard	200 V	25A	1.15 V @ 40 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	25 µA @ 200 V	-	-	-	Through Hole	SOD-93-2	-40°C ~ 150°C
VS-6FR80 DIODE GP REV 800V 6A DO203AA Vishay General Semiconductor - Diodes Division	3,850	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard, Reverse Polarity	800 V	6A	1.1 V @ 19 A	Standard Recovery >500ns, > 200mA (Io)	-	12 mA @ 800 V	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 175°C
VS-6FR20 DIODE GP REV 200V 6A DO203AA Vishay General Semiconductor - Diodes Division	9,441	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard, Reverse Polarity	200 V	6A	1.1 V @ 19 A	Standard Recovery >500ns, > 200mA (Io)	-	12 mA @ 200 V	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 175°C
VS-6F80 DIODE GEN PURP 800V 6A DO203AA Vishay General Semiconductor - Diodes Division	9,657	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard	800 V	6A	1.1 V @ 19 A	Standard Recovery >500ns, > 200mA (Io)	-	12 mA @ 800 V	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 175°C
VS-6F40 DIODE GEN PURP 400V 6A DO203AA Vishay General Semiconductor - Diodes Division	9,959	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard	400 V	6A	1.1 V @ 19 A	Standard Recovery >500ns, > 200mA (Io)	-	12 mA @ 400 V	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 175°C
JAN1N914UR DIODE GEN PURP 75V 200MA DO213AA Microchip Technology	2,828	RFQ	Datasheet	-	DO-213AA	Bulk	Active	Standard	75 V	200mA	1.2 V @ 50 mA	Small Signal =< 200mA (Io), Any Speed	20 ns	500 nA @ 75 V	4pF @ 0V, 1MHz	Military	MIL-PRF-19500/116	Surface Mount	DO-213AA	-65°C ~ 175°C
1N3595A-1/TR DIODE GP REV 125V 150MA DO35 Microchip Technology	6,262	RFQ	Datasheet	-	DO-204AH, DO-35, Axial	Tape & Reel (TR)	Active	Standard, Reverse Polarity	125 V	150mA	920 mV @ 100 mA	Small Signal =< 200mA (Io), Any Speed	3 µs	2 nA @ 125 V	-	-	-	Through Hole	DO-204AH (DO-35)	-65°C ~ 175°C
GC08MPS12-220 DIODE SIL CARB 1.2KV 43A TO220-2 GeneSiC Semiconductor	4,827	RFQ	Datasheet	SiC Schottky MPS™	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	43A	1.8 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	7 µA @ 1200 V	545pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
IRD3903 DIODE GEN PURP 400V 20A DO203AB Vishay General Semiconductor - Diodes Division	3,347	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Obsolete	Standard	400 V	20A	1.65 V @ 62.8 A	Fast Recovery =< 500ns, > 200mA (Io)	350 ns	50 µA @ 400 V	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-40°C ~ 125°C
IRD3903R DIODE GEN PURP 400V 20A DO203AB Vishay General Semiconductor - Diodes Division	8,258	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Obsolete	Standard	400 V	20A	1.65 V @ 62.8 A	Fast Recovery =< 500ns, > 200mA (Io)	350 ns	50 µA @ 400 V	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-40°C ~ 125°C
SICRD10650CT DIODE SIL CARBIDE 650V 5A DPAK SMC Diode Solutions	5,249	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	5A	1.7 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	-	-	-	Surface Mount	DPAK	-55°C ~ 175°C
HFA15PB60 DIODE GP 600V 15A TO247AC Vishay General Semiconductor - Diodes Division	7,471	RFQ	Datasheet	HEXFRED®	TO-247-2	Tube	Obsolete	Standard	600 V	15A	1.7 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	10 µA @ 600 V	-	-	-	Through Hole	TO-247AC Modified	-55°C ~ 150°C
RBLQ20NL10STL TRENCH MOS STRUCTURE, 100V, 20A, Rohm Semiconductor	3,608	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	Schottky	100 V	20A	860 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	80 µA @ 100 V	-	-	-	Surface Mount	TO-263L	150°C
UPR20/TR13 DIODE GEN PURP 200V 2A POWERMITE Microchip Technology	9,628	RFQ	Datasheet	-	DO-216AA	Tape & Reel (TR)	Active	Standard	200 V	2A	1.25 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 200 V	-	-	-	Surface Mount	Powermite	-55°C ~ 150°C
UPR30/TR13 DIODE GEN PURP 300V 2A POWERMITE Microchip Technology	3,314	RFQ	Datasheet	-	DO-216AA	Tape & Reel (TR)	Active	Standard	300 V	2A	1.25 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 300 V	-	-	-	Surface Mount	Powermite	-55°C ~ 150°C

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