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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
APT60S20SG/TR DIODE SCHOTTKY 200V 75A D3PAK Microchip Technology	9,492	RFQ	Datasheet	-	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tape & Reel (TR)	Active	Schottky	200 V	75A	900 mV @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	1 mA @ 200 V	-	-	-	Surface Mount	D3PAK	-55°C ~ 150°C
1N4247/TR DIODE GEN PURP 600V 1A Microchip Technology	9,125	RFQ	Datasheet	-	A, Axial	Tape & Reel (TR)	Active	Standard	600 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	5 µs	1 µA @ 600 V	-	-	-	Through Hole	A, Axial	-65°C ~ 175°C
1N5417E3/TR DIODE GEN PURP 200V 3A B AXIAL Microchip Technology	7,153	RFQ	Datasheet	-	B, Axial	Tape & Reel (TR)	Active	Standard	200 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	-	-	-	-	Through Hole	B, Axial	-65°C ~ 175°C
VS-41HF60 DIODE GEN PURP 600V 40A DO203AB Vishay General Semiconductor - Diodes Division	6,388	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	600 V	40A	1.3 V @ 125 A	Standard Recovery >500ns, > 200mA (Io)	-	9 mA @ 600 V	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 190°C
GP3D020A065A DIODE SIL CARB 650V 20A TO220-2 SemiQ	8,484	RFQ	Datasheet	Amp+™	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.65 V @ 30 A	No Recovery Time > 500mA (Io)	-	75 µA @ 650 V	1247pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
VS-52PF120 DIODE GEN PURP 1.2KV 50A DO203AB Vishay General Semiconductor - Diodes Division	5,253	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	1200 V	50A	1.4 V @ 125 A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-55°C ~ 180°C
VS-52PFR120 DIODE GP REV 1.2KV 50A DO203AB Vishay General Semiconductor - Diodes Division	6,816	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard, Reverse Polarity	1200 V	50A	1.4 V @ 125 A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-55°C ~ 180°C
VS-95PFR140 DIODE GP REV 1.4KV 95A DO203AB Vishay General Semiconductor - Diodes Division	8,319	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard, Reverse Polarity	1400 V	95A	1.4 V @ 267 A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-55°C ~ 180°C
JAN1N4248 DIODE GEN PURP 800V 1A AXIAL Microchip Technology	3,150	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	800 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	5 µs	1 µA @ 800 V	-	Military	MIL-PRF-19500/286	Through Hole	A, Axial	-65°C ~ 175°C
1N4942/TR DIODE GEN PURP 200V 1A Microchip Technology	4,794	RFQ	Datasheet	-	A, Axial	Tape & Reel (TR)	Active	Standard	200 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	1 µA @ 200 V	45pF @ 12V, 1MHz	-	-	Through Hole	A, Axial	-65°C ~ 175°C
1N4942-1/TR DIODE GEN PURP 200V 1A Microchip Technology	4,520	RFQ	-	-	Axial	Tape & Reel (TR)	Active	Standard	200 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	1 µA @ 200 V	45pF @ 12V, 1MHz	-	-	Through Hole	-	-65°C ~ 175°C
1N4942E3 DIODE GEN PURP 200V 1A Microchip Technology	6,219	RFQ	-	-	Axial	Bulk	Active	Standard	200 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	1 µA @ 200 V	45pF @ 12V, 1MHz	-	-	Through Hole	-	-65°C ~ 175°C
VS-1N1190RA DIODE GEN PURP 600V 40A DO203AB Vishay General Semiconductor - Diodes Division	7,537	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard, Reverse Polarity	600 V	40A	1.3 V @ 126 A	Standard Recovery >500ns, > 200mA (Io)	-	2.5 mA @ 600 V	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 200°C
JANTX1N5617/TR DIODE GEN PURP 400V 1A Microchip Technology	9,027	RFQ	-	-	A, Axial	Tape & Reel (TR)	Active	Standard	400 V	1A	1.6 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	500 nA @ 400 V	35pF @ 12V, 1MHz	Military	MIL-PRF-19500/429	Through Hole	A, Axial	-65°C ~ 175°C
1N3613/TR DIODE GEN PURP 600V 1A Microchip Technology	4,524	RFQ	Datasheet	-	A, Axial	Tape & Reel (TR)	Active	Standard	600 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 600 V	-	-	-	Through Hole	A, Axial	-65°C ~ 175°C
1N646UR-1 SILICON SWITCHING DIODES Microchip Technology	9,540	RFQ	-	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
1N3600UR DIODE GEN PURP 75V 300MA DO213AA Microchip Technology	8,129	RFQ	Datasheet	-	DO-213AA	Bulk	Active	Standard	75 V	300mA	1 V @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	4 ns	100 nA @ 50 V	2.5pF @ 0V, 1MHz	-	-	Surface Mount	DO-213AA	-65°C ~ 175°C
JAN1N5620 DIODE GEN PURP 800V 1A AXIAL Microchip Technology	2,024	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	800 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	500 nA @ 800 V	-	Military	MIL-PRF-19500/427	Through Hole	A, Axial	-65°C ~ 200°C
JANTX1N3614 DIODE GEN PURP 800V 1A AXIAL Microchip Technology	7,734	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	800 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 800 V	-	Military	MIL-PRF-19500/228	Through Hole	A, Axial	-65°C ~ 175°C
JANHCA1N5712 DIODE SCHOTTKY 20V 75MA DO35 Microchip Technology	6,598	RFQ	Datasheet	-	DO-204AH, DO-35, Axial	Tape & Reel (TR)	Active	Schottky	20 V	75mA	1 V @ 35 mA	Small Signal =< 200mA (Io), Any Speed	-	150 nA @ 16 V	2pF @ 0V, 1MHz	Military	MIL-PRF-19500/444	Through Hole	DO-204AH (DO-35)	-65°C ~ 150°C

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