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Single Diodes

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
1N3766

1N3766

DIODE GEN PURP 800V 35A DO5

GeneSiC Semiconductor

6,088 0.00
RFQ
1N3766

Datasheet

- DO-203AB, DO-5, Stud Bulk Active Standard 800 V 35A 1.2 V @ 35 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 50 V - - - Chassis, Stud Mount DO-5 -65°C ~ 190°C
1N3766R

1N3766R

DIODE GEN PURP REV 800V 35A DO5

GeneSiC Semiconductor

3,396 0.00
RFQ
1N3766R

Datasheet

- DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 800 V 35A 1.2 V @ 35 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 50 V - - - Chassis, Stud Mount DO-5 -65°C ~ 190°C
1N3767

1N3767

DIODE GEN PURP 900V 35A DO5

GeneSiC Semiconductor

4,716 0.00
RFQ
1N3767

Datasheet

- DO-203AB, DO-5, Stud Bulk Active Standard 900 V 35A 1.2 V @ 35 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 50 V - - - Chassis, Stud Mount DO-5 -65°C ~ 190°C
1N3767R

1N3767R

DIODE GEN PURP REV 900V 35A DO5

GeneSiC Semiconductor

3,391 0.00
RFQ
1N3767R

Datasheet

- DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 900 V 35A 1.2 V @ 35 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 50 V - - - Chassis, Stud Mount DO-5 -65°C ~ 190°C
SICPT5060Y-BP

SICPT5060Y-BP

SCHOTTKY DIODES

Micro Commercial Co

8,806 0.00
RFQ
SICPT5060Y-BP

Datasheet

- TO-247-2 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 119A 1.6 V @ 50 A No Recovery Time > 500mA (Io) 0 ns 25 µA @ 650 V 2453pF @ 0V, 1MHz - - Through Hole TO-247AD -55°C ~ 175°C
VS-87HF100

VS-87HF100

DIODE GEN PURP 400V 85A DO203AB

Vishay General Semiconductor - Diodes Division

7,861 0.00
RFQ
VS-87HF100

Datasheet

- DO-203AB, DO-5, Stud Bulk Active Standard 400 V 85A 1.2 V @ 267 A Standard Recovery >500ns, > 200mA (Io) - - - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 180°C
VS-87HFR100

VS-87HFR100

DIODE GP REV 1KV 85A DO203AB

Vishay General Semiconductor - Diodes Division

2,885 0.00
RFQ
VS-87HFR100

Datasheet

- DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 1000 V 85A 1.2 V @ 267 A Standard Recovery >500ns, > 200mA (Io) - - - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 180°C
1N3070/TR

1N3070/TR

DIODE GEN PURP 175V 100MA DO7

Microchip Technology

4,843 0.00
RFQ

-

- DO-204AA, DO-7, Axial Tape & Reel (TR) Active Standard 175 V 100mA 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed 50 ns 100 nA @ 175 V - - - Through Hole DO-7 -65°C ~ 175°C
1N5802/TR

1N5802/TR

DIODE GEN PURP 50V 1A

Microchip Technology

5,560 0.00
RFQ
1N5802/TR

Datasheet

- A, Axial Tape & Reel (TR) Active Standard 50 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 50 V 25pF @ 10V, 1MHz - - Through Hole A, Axial -65°C ~ 175°C
1N3064/TR

1N3064/TR

DIODE GEN PURP REV 50V 75MA DO7

Microchip Technology

3,273 0.00
RFQ

-

- DO-204AA, DO-7, Axial Tape & Reel (TR) Active Standard, Reverse Polarity 50 V 75mA 1 V @ 10 mA Small Signal =< 200mA (Io), Any Speed 4 ns 100 nA @ 50 V - - - Through Hole DO-7 -55°C ~ 175°C
1N5623

1N5623

DIODE GEN PURP 1KV 1A AXIAL

Microchip Technology

5,684 0.00
RFQ
1N5623

Datasheet

- A, Axial Bulk Active Standard 1000 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 500 nA @ 1000 V 15pF @ 12V, 1MHz - - Through Hole A, Axial -65°C ~ 175°C
JAN1N6620/TR

JAN1N6620/TR

DIODE GEN PURP 220V 2A

Microchip Technology

8,604 0.00
RFQ
JAN1N6620/TR

Datasheet

- A, Axial Tape & Reel (TR) Active Standard 220 V 2A 1.6 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 500 nA @ 220 V 10pF @ 10V, 1MHz Military MIL-PRF-19500/585 Through Hole A, Axial -65°C ~ 150°C
1N5616US/TR

1N5616US/TR

DIODE GEN PURP 400V 1A D-5A

Microchip Technology

7,967 0.00
RFQ
1N5616US/TR

Datasheet

- SQ-MELF, A Tape & Reel (TR) Active Standard 400 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 400 V - - - Surface Mount D-5A -65°C ~ 200°C
RURU15060

RURU15060

DIODE GEN PURP 600V 150A TO218

onsemi

4,022 0.00
RFQ
RURU15060

Datasheet

- TO-218-1 Tube Obsolete Standard 600 V 150A 1.6 V @ 150 A Fast Recovery =< 500ns, > 200mA (Io) 100 ns 250 µA @ 600 V - - - Through Hole TO-218 -65°C ~ 175°C
SIC15120B-BP

SIC15120B-BP

Interface

Micro Commercial Co

2,211 0.00
RFQ
SIC15120B-BP

Datasheet

- TO-220-2 Bulk Last Time Buy SiC (Silicon Carbide) Schottky 1200 V 15A 1.8 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 1200 V 1059pF @ 0V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
DS17-12A

DS17-12A

DIODE AVAL 1.2KV 25A DO203AA

IXYS

4,987 0.00
RFQ
DS17-12A

Datasheet

- DO-203AA, DO-4, Stud Box Obsolete Avalanche 1200 V 25A 1.36 V @ 55 A Standard Recovery >500ns, > 200mA (Io) - 4 mA @ 1200 V - - - Chassis, Stud Mount DO-203AA -40°C ~ 180°C
DSI17-12A

DSI17-12A

DIODE AVAL 1.2KV 25A DO203AA

IXYS

8,305 0.00
RFQ
DSI17-12A

Datasheet

- DO-203AA, DO-4, Stud Box Obsolete Avalanche 1200 V 25A 1.36 V @ 55 A Standard Recovery >500ns, > 200mA (Io) - 4 mA @ 1200 V - - - Chassis, Stud Mount DO-203AA -40°C ~ 180°C
VS-87HF120

VS-87HF120

DIODE GEN PURP 1.2KV 85A DO203AB

Vishay General Semiconductor - Diodes Division

8,565 0.00
RFQ
VS-87HF120

Datasheet

- DO-203AB, DO-5, Stud Bulk Active Standard 1200 V 85A 1.2 V @ 267 A Standard Recovery >500ns, > 200mA (Io) - - - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 180°C
VS-87HFR120

VS-87HFR120

DIODE GP REV 1.2KV 85A DO203AB

Vishay General Semiconductor - Diodes Division

7,908 0.00
RFQ
VS-87HFR120

Datasheet

- DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 1200 V 85A 1.2 V @ 267 A Standard Recovery >500ns, > 200mA (Io) - - - Automotive AEC-Q101 Chassis, Stud Mount DO-203AB (DO-5) -55°C ~ 150°C
1C5811-MSCL

1C5811-MSCL

UFR,FRR

Microchip Technology

3,848 0.00
RFQ

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