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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
LSIC2SD120D10A SIC SCHOTTKY DIODE 1200V 10A TO2 Littelfuse Inc.	7,333	RFQ	-	Gen2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	-	-	-	-	-	-	Automotive	AEC-Q101	Surface Mount	TO-263-2L	-
CD1A50 DIODE SCHOTTKY 50V 1A DIE Microchip Technology	6,265	RFQ	Datasheet	-	Die	Tape & Reel (TR)	Active	Schottky	50 V	1A	600 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 50 V	-	Military	MIL-PRF-19500/586	Surface Mount	Die	-55°C ~ 125°C
2-1616379-6 60105025=DIODE TE Connectivity Aerospace, Defense and Marine	7,326	RFQ	-	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
SIDC30D60E6X1SA1 DIODE GP 600V 75A WAFER Infineon Technologies	7,838	RFQ	Datasheet	-	Die	Bulk	Obsolete	Standard	600 V	75A	1.25 V @ 75 A	Standard Recovery >500ns, > 200mA (Io)	-	27 µA @ 600 V	-	-	-	Surface Mount	Sawn on foil	-55°C ~ 150°C
VS-87HF80 DIODE GEN PURP 400V 85A DO203AB Vishay General Semiconductor - Diodes Division	7,211	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	400 V	85A	1.2 V @ 267 A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 180°C
VS-87HFR80 DIODE GP REV 800V 85A DO203AB Vishay General Semiconductor - Diodes Division	2,540	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard, Reverse Polarity	800 V	85A	1.2 V @ 267 A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 180°C
ADC6D10065A DIODE SIL SIC 650V 37A TO220-2 Analog Power Inc.	1	RFQ	Datasheet	WBG	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	37A	1.8 V @ 2 A	No Recovery Time > 500mA (Io)	-	2 µA @ 650 V	6.3pF @ 0V, 100kHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
JAN1N3595UR-1/TR DIODE GP 125V 150MA DO213AA Microchip Technology	5,068	RFQ	-	-	DO-213AA	Tape & Reel (TR)	Active	Standard	125 V	150mA	920 mV @ 100 mA	Small Signal =< 200mA (Io), Any Speed	3 µs	1 nA @ 125 V	-	Military	MIL-PRF-19500/241	Surface Mount	DO-213AA	-65°C ~ 175°C
JAN1N6642/TR DIODE GEN PURP 75V 300MA Microchip Technology	7,721	RFQ	-	-	D, Axial	Tape & Reel (TR)	Active	Standard	75 V	300mA	1.2 V @ 100 mA	Fast Recovery =< 500ns, > 200mA (Io)	5 ns	500 nA @ 75 V	5pF @ 0V, 1MHz	Military	MIL-PRF-19500/578	Through Hole	D-5D	-65°C ~ 175°C
1N6642US/TR DIODE GEN PURP 75V 300MA D-5D Microchip Technology	5,402	RFQ	Datasheet	-	SQ-MELF, D	Tape & Reel (TR)	Active	Standard	75 V	300mA	1.2 V @ 100 mA	Fast Recovery =< 500ns, > 200mA (Io)	5 ns	500 nA @ 75 V	5pF @ 0V, 1MHz	-	-	Surface Mount	D-5D	-65°C ~ 175°C
1N6642U/TR DIODE GP 100V 300MA SQ-MELF Microchip Technology	9,848	RFQ	-	-	SQ-MELF, B	Tape & Reel (TR)	Active	Standard	100 V	300mA	1.2 V @ 100 mA	Fast Recovery =< 500ns, > 200mA (Io)	5 ns	500 nA @ 75 V	5pF @ 0V, 1MHz	-	-	Surface Mount	B, SQ-MELF	-65°C ~ 200°C
GP3D015A120B DIODE SIL CARB 1.2KV 15A TO247-2 SemiQ	7,032	RFQ	Datasheet	Amp+™	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	15A	1.6 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 1200 V	962pF @ 1V, 1MHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
CDLL5817 DIODE SCHOTTKY 20V 1A DO213AB Microchip Technology	3,619	RFQ	Datasheet	-	DO-213AB, MELF	Bulk	Active	Schottky	20 V	1A	600 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 20 V	-	-	-	Surface Mount	DO-213AB	-55°C ~ 125°C
1N5711E3/TR DIODE SCHOTTKY 70V 33MA DO35 Microchip Technology	2,997	RFQ	-	-	DO-204AH, DO-35, Axial	Tape & Reel (TR)	Active	Schottky	70 V	33mA	1 V @ 15 mA	Small Signal =< 200mA (Io), Any Speed	-	200 nA @ 50 V	2pF @ 0V, 1MHz	-	-	Through Hole	DO-204AH (DO-35)	-65°C ~ 150°C
1N6642UE3 DIODE GEN PURP 75V 300MA D-5D Microchip Technology	2,129	RFQ	-	-	SQ-MELF, D	Bulk	Active	Standard	75 V	300mA	1.2 V @ 100 mA	Fast Recovery =< 500ns, > 200mA (Io)	5 ns	500 nA @ 75 V	5pF @ 0V, 1MHz	-	-	Surface Mount	D-5D	-65°C ~ 175°C
SCS210KE2C DIODE SIL CARB 1.2KV 10A TO247 Rohm Semiconductor	7,656	RFQ	Datasheet	-	TO-247-3	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	10A	-	No Recovery Time > 500mA (Io)	0 ns	-	-	-	-	Through Hole	TO-247	175°C (Max)
1N3064 DIODE GEN PURP 50V 75MA DO35 Microsemi Corporation	5,894	RFQ	Datasheet	-	DO-204AA, DO-7, Axial	Bulk	Obsolete	Standard	50 V	75mA	1 V @ 75 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	100 nA @ 50 V	-	-	-	Through Hole	DO-35	-65°C ~ 125°C
1N3070 DIODE GEN PURP 175V 100MA DO7 Microchip Technology	4,502	RFQ	Datasheet	-	DO-204AA, DO-7, Axial	Bulk	Obsolete	Standard	175 V	100mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	50 ns	100 nA @ 175 V	-	-	-	Through Hole	DO-7	-65°C ~ 175°C
1N3070UR-1 DIODE GEN PURP 175V 100MA DO7 Microchip Technology	2,830	RFQ	Datasheet	-	DO-204AA, DO-7, Axial	Bulk	Active	Standard	175 V	100mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	50 ns	100 nA @ 175 V	-	-	-	Through Hole	DO-7	-65°C ~ 175°C
CDLL1A50/TR DIODE SCHOTTKY 50V 1A DO213AB Microchip Technology	6,642	RFQ	Datasheet	-	DO-213AB, MELF	Tape & Reel (TR)	Active	Schottky	50 V	1A	600 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 50 V	0.9pF @ 5V, 1MHz	-	-	Surface Mount	DO-213AB	-

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