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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
FR6B05 DIODE GEN PURP 100V 16A DO4 GeneSiC Semiconductor	7,751	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard	100 V	16A	1.4 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	25 µA @ 50 V	-	-	-	Chassis, Stud Mount	DO-4	-65°C ~ 150°C
FR6D05 DIODE GEN PURP 200V 16A DO4 GeneSiC Semiconductor	9,874	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard	200 V	16A	1.4 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	25 µA @ 50 V	-	-	-	Chassis, Stud Mount	DO-4	-65°C ~ 150°C
VS-88HFR80 DIODE GP REV 800V 85A DO203AB Vishay General Semiconductor - Diodes Division	8,116	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard, Reverse Polarity	800 V	85A	1.2 V @ 267 A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 180°C
1N6638U DIODE GEN PURP 125V 300MA D-5B Microchip Technology	8,960	RFQ	-	-	SQ-MELF, E	Bulk	Active	Standard	125 V	300mA	1.1 V @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	4.5 ns	500 nA @ 150 V	2.5pF @ 0V, 1MHz	-	-	Surface Mount	D-5B	-65°C ~ 175°C
JAN1N5623/TR DIODE GEN PURP 1KV 1A Microchip Technology	2,450	RFQ	-	-	A, Axial	Tape & Reel (TR)	Active	Standard	1000 V	1A	1.6 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	500 nA @ 1 V	-	Military	MIL-PRF-19500/429	Through Hole	A, Axial	-65°C ~ 175°C
VS-70HFLR40S05 DIODE GP REV 400V 70A DO203AB Vishay General Semiconductor - Diodes Division	7,374	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard, Reverse Polarity	400 V	70A	1.85 V @ 219.8 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	100 µA @ 400 V	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-40°C ~ 125°C
GP3D040A065U DIODE SIL CARB 650V 40A TO247-3 SemiQ	3,520	RFQ	Datasheet	Amp+™	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	40A	1.7 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	835pF @ 1V, 1MHz	-	-	Through Hole	TO-247-3	-55°C ~ 175°C
JANTX1N5553/TR DIODE GEN PURP 800V 5A Microchip Technology	9,476	RFQ	Datasheet	-	B, Axial	Tape & Reel (TR)	Active	Standard	800 V	5A	1.3 V @ 9 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	1 µA @ 800 V	-	Military	MIL-PRF-19500/420	Through Hole	B, Axial	-65°C ~ 175°C
JANTXV1N5618 DIODE GEN PURP 600V 1A AXIAL Microchip Technology	2,822	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	600 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	500 nA @ 600 V	-	Military	MIL-PRF-19500/427	Through Hole	A, Axial	-65°C ~ 200°C
JANTXV1N4245 DIODE GEN PURP 200V 1A AXIAL Microchip Technology	7,684	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	200 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	5 µs	1 µA @ 200 V	-	Military	MIL-PRF-19500/286	Through Hole	A, Axial	-65°C ~ 175°C
1N6642 DIODE GEN PURPOSE Microchip Technology	3,955	RFQ	Datasheet	-	DO-204AH, DO-35, Axial	Bulk	Active	Standard	75 V	300mA	1.2 V @ 100 mA	Fast Recovery =< 500ns, > 200mA (Io)	5 ns	500 nA @ 75 V	5pF @ 0V, 1MHz	-	-	Through Hole	DO-204AH (DO-35)	-65°C ~ 175°C
1N5553/TR STD RECTIFIER Microchip Technology	2,724	RFQ	Datasheet	-	B, Axial	Tape & Reel (TR)	Active	Standard	800 V	3A	1.2 V @ 9 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	1 µA @ 800 V	-	-	-	Through Hole	B, Axial	-65°C ~ 175°C
VS-70HFL10S02 DIODE GEN PURP 100V 70A DO203AB Vishay General Semiconductor - Diodes Division	7,756	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	100 V	70A	1.85 V @ 219.8 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	100 µA @ 100 V	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-40°C ~ 125°C
FR12G02 DIODE GEN PURP 400V 12A DO4 GeneSiC Semiconductor	4,606	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard	400 V	12A	800 mV @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	25 µA @ 100 V	-	-	-	Chassis, Stud Mount	DO-4	-65°C ~ 150°C
FR12J02 DIODE GEN PURP 600V 12A DO4 GeneSiC Semiconductor	5,764	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard	600 V	12A	800 mV @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	25 µA @ 100 V	-	-	-	Chassis, Stud Mount	DO-4	-65°C ~ 150°C
FR12B02 DIODE GEN PURP 100V 12A DO4 GeneSiC Semiconductor	5,000	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard	100 V	12A	800 mV @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	25 µA @ 100 V	-	-	-	Chassis, Stud Mount	DO-4	-65°C ~ 150°C
FR12D02 DIODE GEN PURP 200V 12A DO4 GeneSiC Semiconductor	5,710	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard	200 V	12A	800 mV @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	25 µA @ 100 V	-	-	-	Chassis, Stud Mount	DO-4	-65°C ~ 150°C
FR16K05 DIODE GEN PURP 800V 16A DO4 GeneSiC Semiconductor	3,550	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard	800 V	16A	1.1 V @ 16 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	25 µA @ 100 V	-	-	-	Chassis, Stud Mount	DO-4	-65°C ~ 150°C
1N6620 DIODE GEN PURP 220V 1.2A AXIAL Microchip Technology	6,622	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	220 V	1.2A	1.4 V @ 1.2 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	500 nA @ 220 V	10pF @ 10V, 1MHz	-	-	Through Hole	A, Axial	-65°C ~ 150°C
JPAD50 TO-92 2L DIODE GEN PURP 35V 10MA TO92 Linear Integrated Systems, Inc.	4,458	RFQ	Datasheet	PAD	TO-226-2, TO-92-2 (TO-226AC)	Bulk	Active	Standard	35 V	10mA	1.5 V @ 5 mA	Small Signal =< 200mA (Io), Any Speed	-	50 pA @ 20 V	1.5pF @ 5V, 1MHz	-	-	Through Hole	TO-92	-55°C ~ 150°C

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