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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
GKN7112 DIODE GEN PURP 1.2KV 95A DO5 GeneSiC Semiconductor	4,875	RFQ	-	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	1200 V	95A	1.5 V @ 60 A	Standard Recovery >500ns, > 200mA (Io)	-	10 mA @ 1200 V	-	-	-	Chassis, Stud Mount	DO-5	-40°C ~ 180°C
JANTX1N6620 DIODE GEN PURP 220V 2A AXIAL Microchip Technology	2,767	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	220 V	2A	1.4 V @ 1.2 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	500 nA @ 220 V	10pF @ 10V, 1MHz	Military	MIL-PRF-19500/585	Through Hole	A, Axial	-65°C ~ 150°C
UTR2350 DIODE GEN PURP 500V 2A B AXIAL Microchip Technology	5,211	RFQ	-	-	B, Axial	Bulk	Active	Standard	500 V	2A	1.1 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	350 ns	5 µA @ 500 V	200pF @ 0V, 1MHz	-	-	Through Hole	B, Axial	-65°C ~ 175°C
UTR2320 DIODE GEN PURP 200V 2A B AXIAL Microchip Technology	7,754	RFQ	-	-	B, Axial	Bulk	Active	Standard	200 V	2A	1.1 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	5 µA @ 200 V	320pF @ 0V, 1MHz	-	-	Through Hole	B, Axial	-65°C ~ 175°C
UTR2360 DIODE GEN PURP 600V 2A B AXIAL Microchip Technology	5,139	RFQ	-	-	B, Axial	Bulk	Active	Standard	600 V	2A	1.1 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	400 ns	5 µA @ 600 V	160pF @ 0V, 1MHz	-	-	Through Hole	B, Axial	-65°C ~ 175°C
UTR2310 DIODE GEN PURP 100V 2A B AXIAL Microchip Technology	8,431	RFQ	-	-	B, Axial	Bulk	Active	Standard	100 V	2A	1.1 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	5 µA @ 100 V	400pF @ 0V, 1MHz	-	-	Through Hole	B, Axial	-65°C ~ 175°C
UTR2305 DIODE GEN PURP 50V 2A B AXIAL Microchip Technology	8,740	RFQ	-	-	B, Axial	Bulk	Active	Standard	50 V	2A	1.1 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	5 µA @ 50 V	600pF @ 0V, 1MHz	-	-	Through Hole	B, Axial	-65°C ~ 175°C
1N6544/TR RECTIFIER UFR,FRR Microchip Technology	8,409	RFQ	-	*	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
JANTX1N6620/TR DIODE GEN PURP 220V 2A AXIAL Microchip Technology	5,824	RFQ	-	-	A, Axial	Tape & Reel (TR)	Active	Standard	220 V	2A	1.4 V @ 1.2 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	500 nA @ 220 V	10pF @ 10V, 1MHz	Military	MIL-PRF-19500/585	Through Hole	A, Axial	-65°C ~ 150°C
1N5826 DIODE SCHOTTKY 20V 15A DO5 GeneSiC Semiconductor	9,894	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Schottky	20 V	15A	440 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	10 mA @ 20 V	-	-	-	Chassis, Stud Mount	DO-5	-65°C ~ 150°C
1N5827 DIODE SCHOTTKY 30V 15A DO5 GeneSiC Semiconductor	5,997	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Schottky	30 V	15A	470 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	10 mA @ 20 V	-	-	-	Chassis, Stud Mount	DO-5	-65°C ~ 150°C
1N5828 DIODE SCHOTTKY 40V 15A DO5 GeneSiC Semiconductor	6,303	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Schottky	40 V	15A	500 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	10 mA @ 20 V	-	-	-	Chassis, Stud Mount	DO-5	-65°C ~ 150°C
VS-86HFR160 DIODE GP REV 1.6KV 85A DO203AB Vishay General Semiconductor - Diodes Division	3,525	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard, Reverse Polarity	1600 V	85A	1.4 V @ 267 A	Standard Recovery >500ns, > 200mA (Io)	-	4.5 mA @ 1600 V	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 150°C
1N6625 DIODE GEN PURP 1.1KV 1A AXIAL Microchip Technology	4,716	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	1100 V	1A	1.75 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	1 µA @ 1100 V	10pF @ 10V, 1MHz	-	-	Through Hole	A, Axial	-65°C ~ 150°C
DS35-08A DIODE GEN PURP 800V 49A DO203AB IXYS	3,007	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Box	Obsolete	Standard	800 V	49A	1.55 V @ 150 A	Standard Recovery >500ns, > 200mA (Io)	-	4 mA @ 800 V	-	-	-	Chassis, Stud Mount	DO-203AB	-40°C ~ 180°C
DSI35-08A DIODE GEN PURP 800V 49A DO203AB IXYS	6,889	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Box	Obsolete	Standard	800 V	49A	1.55 V @ 150 A	Standard Recovery >500ns, > 200mA (Io)	-	4 mA @ 800 V	-	-	-	Chassis, Stud Mount	DO-203AB	-40°C ~ 180°C
IDY10S120XKSA1 DIODE SIC 1.2KV 5A TO247HC-3 Infineon Technologies	7,422	RFQ	Datasheet	CoolSiC™+	TO-247-3 Variant	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	5A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	120 µA @ 1200 V	250pF @ 1V, 1MHz	-	-	Through Hole	PG-TO247HC-3	-55°C ~ 175°C
JANTXV1N5615/TR DIODE GEN PURP 200V 1A Microchip Technology	6,443	RFQ	-	-	A, Axial	Tape & Reel (TR)	Active	Standard	200 V	1A	1.6 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	500 nA @ 200 V	45pF @ 12V, 1MHz	Military	MIL-PRF-19500/429	Through Hole	A, Axial	-65°C ~ 175°C
JAN1N6623U DIODE GEN PURP 800V 1A D-5A Microsemi Corporation	7,951	RFQ	-	-	SQ-MELF, A	Bulk	Active	Standard	800 V	1A	1.55 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	500 nA @ 800 V	-	Military	MIL-PRF-19500/585	Surface Mount	D-5A	-65°C ~ 150°C
1N6626US/TR DIODE GEN PURP 220V 1.75A A-MELF Microchip Technology	2,427	RFQ	-	-	SQ-MELF, A	Tape & Reel (TR)	Active	Standard	220 V	1.75A	1.35 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	2 µA @ 220 V	40pF @ 10V, 1MHz	-	-	Surface Mount	A-MELF	-65°C ~ 150°C

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