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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
SCS220KGHRC DIODE SIL CARB 1.2KV 20A TO220AC Rohm Semiconductor	4,869	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	20A	1.6 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	400 µA @ 1200 V	1060pF @ 1V, 1MHz	Automotive	AEC-Q101	Through Hole	TO-220AC	175°C (Max)
JANTXV1N5811US/TR DIODE GEN PURP 150V 3A B SQ-MELF Microchip Technology	6,955	RFQ	-	-	SQ-MELF, B	Tape & Reel (TR)	Active	Standard	150 V	3A	875 mV @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	5 µA @ 150 V	60pF @ 10V, 1MHz	Military	MIL-PRF-19500/477	Surface Mount	B, SQ-MELF	-65°C ~ 175°C
SCS120AGC DIODE SIL CARB 600V 20A TO220AC Rohm Semiconductor	2,169	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	600 V	20A	1.7 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	400 µA @ 600 V	860pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	175°C (Max)
JANTX1N5622US DIODE GEN PURP 1KV 1A D-5A Microchip Technology	3,979	RFQ	Datasheet	-	SQ-MELF, A	Bulk	Active	Standard	1000 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	500 nA @ 1000 V	-	Military	MIL-PRF-19500/427	Surface Mount	D-5A	-65°C ~ 200°C
MNS1N6640US/TR DIODE GP 50V 300MA D-5D Microchip Technology	3,391	RFQ	-	-	SQ-MELF, D	Tape & Reel (TR)	Active	Standard	50 V	300mA	1 V @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	4 ns	100 nA @ 50 V	-	Military	MIL-PRF-19500/609	Surface Mount	D-5D	-65°C ~ 175°C
JANTXV1N5807US DIODE GEN PURP 50V 3A D-5B Microchip Technology	3,017	RFQ	Datasheet	-	SQ-MELF, E	Bulk	Discontinued at Digi-Key	Standard	50 V	3A	875 mV @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	5 µA @ 50 V	60pF @ 10V, 1MHz	Military	MIL-PRF-19500/477	Surface Mount	D-5B	-65°C ~ 175°C
1N6546 DIODE RECT ULT FAST REC A-PKG Microchip Technology	2,911	RFQ	-	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
1N5826R DIODE SCHOTTKY REV 20V 15A DO5 GeneSiC Semiconductor	3,508	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Schottky, Reverse Polarity	20 V	15A	440 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	10 mA @ 20 V	-	-	-	Chassis, Stud Mount	DO-5	-65°C ~ 150°C
1N5827R DIODE SCHOTTKY REV 30V 15A DO5 GeneSiC Semiconductor	6,805	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Schottky, Reverse Polarity	30 V	15A	470 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	10 mA @ 20 V	-	-	-	Chassis, Stud Mount	DO-5	-65°C ~ 150°C
1N5828R DIODE SCHOTTKY REV 40V 15A DO5 GeneSiC Semiconductor	5,502	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Schottky, Reverse Polarity	40 V	15A	500 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	10 mA @ 20 V	-	-	-	Chassis, Stud Mount	DO-5	-65°C ~ 150°C
IDC15S120C5X1SA1 IC DIODE EMITTER CTLR WAFER Infineon Technologies	5,095	RFQ	-	-	Die	Bulk	Active	-	-	-	-	-	-	-	-	-	-	Surface Mount	Sawn on foil	-
UTR4340 DIODE GEN PURP 400V 4A AXIAL Microsemi Corporation	6,971	RFQ	-	-	B, Axial	Bag	Active	Standard	400 V	4A	1.1 V @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	400 ns	5 µA @ 400 V	-	-	-	Through Hole	B, Axial	-65°C ~ 175°C
1N6857UR-1 SCHOTTKY RECTIFIER Microchip Technology	9,568	RFQ	Datasheet	-	DO-213AA	Bulk	Active	Schottky	16 V	150mA	750 mV @ 35 mA	Small Signal =< 200mA (Io), Any Speed	-	150 nA @ 16 V	4.5pF @ 0V, 1MHz	-	-	Surface Mount	DO-213AA	-65°C ~ 150°C
UTX215 DIODE GEN PURP 150V 2A A AXIAL Microchip Technology	8,929	RFQ	-	-	A, Axial	Bulk	Active	Standard	150 V	2A	1 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	3 µA @ 150 V	-	-	-	Through Hole	A, Axial	-195°C ~ 175°C
UTR3340 DIODE GEN PURP 400V 3A B AXIAL Microchip Technology	5,941	RFQ	-	-	B, Axial	Bulk	Active	Standard	400 V	3A	1.1 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	300 ns	5 µA @ 400 V	240pF @ 0V, 1MHz	-	-	Through Hole	B, Axial	-65°C ~ 175°C
UTR3350 DIODE GEN PURP 500V 3A B AXIAL Microchip Technology	8,917	RFQ	-	-	B, Axial	Bulk	Active	Standard	500 V	3A	1.1 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	350 ns	5 µA @ 500 V	200pF @ 0V, 1MHz	-	-	Through Hole	B, Axial	-65°C ~ 175°C
UTR3305 DIODE GEN PURP 50V 3A B AXIAL Microchip Technology	8,764	RFQ	-	-	B, Axial	Bulk	Active	Standard	50 V	3A	1.1 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	5 µA @ 50 V	600pF @ 0V, 1MHz	-	-	Through Hole	B, Axial	-65°C ~ 175°C
UTR3360 DIODE GEN PURP 600V 3A B AXIAL Microchip Technology	7,071	RFQ	-	-	B, Axial	Bulk	Active	Standard	600 V	3A	1.1 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	400 ns	5 µA @ 600 V	160pF @ 0V, 1MHz	-	-	Through Hole	B, Axial	-65°C ~ 175°C
UTR4305 DIODE GEN PURP 50V 4A B AXIAL Microchip Technology	7,063	RFQ	-	-	B, Axial	Bulk	Active	Standard	50 V	4A	1.1 V @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	5 µA @ 50 V	600pF @ 0V, 1MHz	-	-	Through Hole	B, Axial	-65°C ~ 175°C
UTR4310 DIODE GEN PURP 100V 4A B AXIAL Microchip Technology	4,101	RFQ	-	-	B, Axial	Bulk	Active	Standard	100 V	4A	1.1 V @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	5 µA @ 100 V	400pF @ 0V, 1MHz	-	-	Through Hole	B, Axial	-65°C ~ 175°C

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