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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
FR40BR02 DIODE GEN PURP REV 100V 40A DO5 GeneSiC Semiconductor	7,398	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard, Reverse Polarity	100 V	40A	1 V @ 40 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	25 µA @ 100 V	-	-	-	Chassis, Stud Mount	DO-5	-40°C ~ 125°C
FR40BR05 DIODE GEN PURP REV 100V 40A DO5 GeneSiC Semiconductor	2,481	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard, Reverse Polarity	100 V	40A	1 V @ 40 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	25 µA @ 100 V	-	-	-	Chassis, Stud Mount	DO-5	-40°C ~ 125°C
FR40DR02 DIODE GEN PURP REV 200V 40A DO5 GeneSiC Semiconductor	4,208	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard, Reverse Polarity	200 V	40A	1 V @ 40 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	25 µA @ 100 V	-	-	-	Chassis, Stud Mount	DO-5	-40°C ~ 125°C
FR40DR05 DIODE GEN PURP REV 200V 40A DO5 GeneSiC Semiconductor	3,600	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard, Reverse Polarity	200 V	40A	1 V @ 40 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	25 µA @ 100 V	-	-	-	Chassis, Stud Mount	DO-5	-40°C ~ 125°C
FR40GR05 DIODE GEN PURP REV 400V 40A DO5 GeneSiC Semiconductor	3,377	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard, Reverse Polarity	400 V	40A	1 V @ 40 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	25 µA @ 100 V	-	-	-	Chassis, Stud Mount	DO-5	-40°C ~ 125°C
FR40JR02 DIODE GEN PURP REV 600V 40A DO5 GeneSiC Semiconductor	4,084	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard, Reverse Polarity	600 V	40A	1 V @ 40 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	25 µA @ 100 V	-	-	-	Chassis, Stud Mount	DO-5	-40°C ~ 125°C
FR40JR05 DIODE GEN PURP REV 600V 40A DO5 GeneSiC Semiconductor	8,289	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard, Reverse Polarity	600 V	40A	1.4 V @ 40 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	25 µA @ 100 V	-	-	-	Chassis, Stud Mount	DO-5	-40°C ~ 125°C
1N6622 DIODE GEN PURP 600V 1.2A A-PAK Microchip Technology	3,196	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	600 V	1.2A	1.4 V @ 1.2 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	500 nA @ 600 V	-	-	-	Through Hole	A, Axial	-65°C ~ 150°C
1N6621 DIODE GEN PURP 440V 1.2A AXIAL Microchip Technology	5,112	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	440 V	1.2A	1.4 V @ 1.2 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	500 nA @ 440 V	10pF @ 10V, 1MHz	-	-	Through Hole	A, Axial	-65°C ~ 150°C
1N4949SM/TR UFR,FRR Microchip Technology	5,973	RFQ	-	*	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
LSIC2SD120D15 DIODE SIL CARB 1.2KV 44A TO263L Littelfuse Inc.	4,530	RFQ	Datasheet	Gen2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	44A	1.8 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 1200 V	920pF @ 1V, 1MHz	-	-	Surface Mount	TO-263-2L	-55°C ~ 175°C
LSIC2SD120A20A DIODE SIC 1.2KV 54.5A TO220L Littelfuse Inc.	2,730	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	54.5A	1.8 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 1200 V	1142pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2L	-55°C ~ 175°C
1N6622E3 DIODE A AXIAL Microchip Technology	6,063	RFQ	-	-	A, Axial	Bulk	Active	-	-	-	1.6 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	-	-	-	-	Through Hole	A, Axial	-
1N6622/TR DIODE GEN PURP 600V 1.2A A-PAK Microchip Technology	4,123	RFQ	Datasheet	-	A, Axial	Tape & Reel (TR)	Active	Standard	600 V	1.2A	1.4 V @ 1.2 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	500 nA @ 600 V	-	-	-	Through Hole	A, Axial	-65°C ~ 150°C
1N6621/TR DIODE GEN PURP 440V 1.2A Microchip Technology	8,428	RFQ	Datasheet	-	A, Axial	Tape & Reel (TR)	Active	Standard	440 V	1.2A	1.4 V @ 1.2 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	500 nA @ 440 V	10pF @ 10V, 1MHz	-	-	Through Hole	A, Axial	-65°C ~ 150°C
SIDC59D170HX1SA2 DIODE GP 1.7KV 100A WAFER Infineon Technologies	3,772	RFQ	Datasheet	-	Die	Bulk	Discontinued at Digi-Key	Standard	1700 V	100A	1.8 V @ 100 A	Standard Recovery >500ns, > 200mA (Io)	-	27 µA @ 1700 V	-	-	-	Surface Mount	Sawn on foil	-55°C ~ 150°C
JANTXV1N5616 DIODE GEN PURP 400V 1A AXIAL Microchip Technology	7,575	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	400 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	500 nA @ 400 V	-	Military	MIL-PRF-19500/427	Through Hole	A, Axial	-65°C ~ 200°C
JAN1N6631/TR DIODE GEN PURP 1.1KV 1.4A Microchip Technology	8,559	RFQ	-	-	E, Axial	Tape & Reel (TR)	Active	Standard	1100 V	1.4A	1.6 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	2 µA @ 1100 V	-	Military	MIL-PRF-19500/590	Through Hole	-	-65°C ~ 175°C
JAN1N6628/TR DIODE GEN PURP 660V 1.75A Microchip Technology	2,073	RFQ	-	-	E, Axial	Tape & Reel (TR)	Active	Standard	660 V	1.75A	1.35 V @ 1.2 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	2 µA @ 600 V	-	Military	MIL-PRF-19500/590	Through Hole	-	-65°C ~ 175°C
JAN1N6630/TR DIODE GEN PURP 900V 1.4A Microchip Technology	6,688	RFQ	-	-	E, Axial	Tape & Reel (TR)	Active	Standard	900 V	1.4A	1.4 V @ 1.4 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	2 µA @ 900 V	-	Military	MIL-PRF-19500/590	Through Hole	-	-65°C ~ 150°C

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