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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
125SPC015A DIODE SCHOTTKY 15V 120A SPD-3A SMC Diode Solutions	6,794	RFQ	Datasheet	-	SPD-3A	Bulk	Active	Schottky	15 V	120A	410 mV @ 120 A	Fast Recovery =< 500ns, > 200mA (Io)	-	40 mA @ 15 V	7200pF @ 5V, 1MHz	-	-	Surface Mount	SPD-3A	-55°C ~ 125°C
VS-T85HF60 DIODE GEN PURP 600V 85A D-55 Vishay General Semiconductor - Diodes Division	4,915	RFQ	Datasheet	-	D-55 T-Module	Bulk	Active	Standard	600 V	85A	-	Standard Recovery >500ns, > 200mA (Io)	-	20 mA @ 600 V	-	-	-	Chassis Mount	D-55	-
DSA300I200NA DIODE SCHOTTKY 200V 300A SOT227B IXYS	2,194	RFQ	-	-	SOT-227-4, miniBLOC	Tube	Obsolete	Schottky	200 V	300A	1.03 V @ 300 A	Fast Recovery =< 500ns, > 200mA (Io)	-	3 mA @ 200 V	2220pF @ 24V, 1MHz	-	-	Chassis Mount	SOT-227B	-
HFA140NH60 DIODE GEN PURP 600V 140A D-67 Vishay General Semiconductor - Diodes Division	2,226	RFQ	Datasheet	HEXFRED®	D-67 HALF-PAK	Bulk	Obsolete	Standard	600 V	140A	1.6 V @ 140 A	Fast Recovery =< 500ns, > 200mA (Io)	140 ns	40 µA @ 600 V	-	-	-	Chassis Mount	D-67 HALF-PAK	-
HFA140NH60R DIODE GEN PURP 600V 140A D-67 Vishay General Semiconductor - Diodes Division	2,546	RFQ	Datasheet	HEXFRED®	D-67 HALF-PAK	Bulk	Obsolete	Standard	600 V	140A	1.6 V @ 140 A	Fast Recovery =< 500ns, > 200mA (Io)	140 ns	40 µA @ 600 V	-	-	-	Chassis Mount	D-67 HALF-PAK	-
VS-T110HF10 DIODE GEN PURP 100V 110A D-55 Vishay General Semiconductor - Diodes Division	4,052	RFQ	Datasheet	-	D-55 T-Module	Bulk	Active	Standard	100 V	110A	-	Standard Recovery >500ns, > 200mA (Io)	-	20 mA @ 100 V	-	-	-	Chassis Mount	D-55	-
VS-T20HF220 DIODE GEN PURP 2.2KV 20A D-55 Vishay General Semiconductor - Diodes Division	2,624	RFQ	Datasheet	-	D-55 T-Module	Bulk	Obsolete	Standard	2200 V	20A	1.5 V @ 60 A	Standard Recovery >500ns, > 200mA (Io)	-	18 mA @ 2200 V	-	-	-	Chassis Mount	D-55	-40°C ~ 150°C
VS-T85HF80 DIODE GEN PURP 800V 85A D-55 Vishay General Semiconductor - Diodes Division	6,966	RFQ	Datasheet	-	D-55 T-Module	Bulk	Active	Standard	800 V	85A	-	Standard Recovery >500ns, > 200mA (Io)	-	20 mA @ 800 V	-	-	-	Chassis Mount	D-55	-
JANTXV1N5712-1 DIODE SCHOTTKY 16V 33MA DO35 Microchip Technology	8,958	RFQ	-	-	DO-204AH, DO-35, Axial	Bulk	Active	Schottky	16 V	33mA	1 V @ 35 mA	Small Signal =< 200mA (Io), Any Speed	-	150 nA @ 16 V	2pF @ 0V, 1MHz	Military	MIL-PRF-19500/444	Through Hole	DO-204AH (DO-35)	-65°C ~ 150°C
1N6536 DIODE GEN PURP 400V 1A A AXIAL Microchip Technology	5,894	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	400 V	1A	1.5 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	10 µA @ 400 V	-	-	-	Through Hole	A, Axial	-
VS-T85HF100 DIODE GEN PURP 1KV 85A D-55 Vishay General Semiconductor - Diodes Division	8,593	RFQ	Datasheet	-	D-55 T-Module	Bulk	Active	Standard	1000 V	85A	-	Standard Recovery >500ns, > 200mA (Io)	-	20 mA @ 1000 V	-	-	-	Chassis Mount	D-55	-
UES1003 DIODE GEN PURP 150V 1A A AXIAL Microchip Technology	7,286	RFQ	-	-	A, Axial	Bulk	Active	Standard	150 V	1A	975 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	-	-	-	-	Through Hole	A, Axial	-55°C ~ 175°C
JANS1N5811US DIODE GEN PURP 150V 3A B SQ-MELF Microchip Technology	8,651	RFQ	-	-	SQ-MELF, B	Bulk	Active	Standard	150 V	3A	875 mV @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	-	-	Military	MIL-PRF-19500/477	Surface Mount	B, SQ-MELF	-65°C ~ 175°C
JANTXV1N5712-1/TR DIODE SCHOTTKY 16V 33MA DO35 Microchip Technology	3,396	RFQ	-	-	DO-204AH, DO-35, Axial	Tape & Reel (TR)	Active	Schottky	16 V	33mA	1 V @ 35 mA	Small Signal =< 200mA (Io), Any Speed	-	150 nA @ 16 V	2pF @ 0V, 1MHz	Military	MIL-PRF-19500/444	Through Hole	DO-204AH (DO-35)	-65°C ~ 150°C
VS-T85HF120 DIODE GEN PURP 200V 85A D-55 Vishay General Semiconductor - Diodes Division	5,029	RFQ	Datasheet	-	D-55 T-Module	Bulk	Active	Standard	200 V	85A	-	Standard Recovery >500ns, > 200mA (Io)	-	20 mA @ 200 V	-	-	-	Chassis Mount	D-55	-
1N6536/TR DIODE GP REV 400V 1A A AXIAL Microchip Technology	4,958	RFQ	-	-	A, Axial	Tape & Reel (TR)	Active	Standard, Reverse Polarity	400 V	1A	1.5 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	10 µA @ 400 V	-	-	-	Through Hole	A, Axial	-
JANTX1N4148UB2R DIODE GEN PURP 75V 200MA UB2R Microchip Technology	7,703	RFQ	-	-	2-SMD, No Lead	Bulk	Active	Standard, Reverse Polarity	75 V	200mA	1.2 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	20 ns	500 nA @ 75 V	4pF @ 0V, 1MHz	Military	MIL-PRF-19500/116	Surface Mount	UB2R	-65°C ~ 200°C
JANTXV1N4148UB2R DIODE GEN PURP 75V 200MA UB Microchip Technology	5,640	RFQ	-	-	3-SMD, No Lead	Bulk	Active	Standard, Reverse Polarity	75 V	200mA	1.2 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	20 ns	500 nA @ 75 V	4pF @ 0V, 1MHz	Military	MIL-PRF-19500/116	Surface Mount	UB	-65°C ~ 200°C
JANTXV1N6630US DIODE GEN PURP 1KV 1.4A D-5B Microchip Technology	3,094	RFQ	Datasheet	-	SQ-MELF, E	Bulk	Active	Standard	1000 V	1.4A	1.4 V @ 1.4 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	2 µA @ 1000 V	-	Military	MIL-PRF-19500/590	Surface Mount	D-5B	-65°C ~ 150°C
JANTXV1N6631US DIODE GEN PURP 1.1KV 1.4A D-5B Microchip Technology	4,548	RFQ	-	-	SQ-MELF, E	Bulk	Active	Standard	1100 V	1.4A	1.6 V @ 1.4 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	4 µA @ 1100 V	40pF @ 10V, 1MHz	Military	MIL-PRF-19500/590	Surface Mount	D-5B	-65°C ~ 150°C

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