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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
UES1101SM/TR DIODE GEN PURP 50V 2A A SQ-MELF Microchip Technology	7,583	RFQ	-	-	SQ-MELF, A	Tape & Reel (TR)	Active	Standard	50 V	2A	975 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	-	-	-	-	Surface Mount	A, SQ-MELF	-
240NQ045R DIODE SCHOTTKY 45V 240A D-67 Vishay General Semiconductor - Diodes Division	9,833	RFQ	Datasheet	-	D-67 HALF-PAK	Bulk	Obsolete	Schottky	45 V	240A	610 mV @ 240 A	Fast Recovery =< 500ns, > 200mA (Io)	-	20 mA @ 45 V	10300pF @ 5V, 1MHz	-	-	Chassis Mount	D-67 HALF-PAK	-
240NQ040 DIODE SCHOTTKY 40V 240A D-67 Vishay General Semiconductor - Diodes Division	8,415	RFQ	Datasheet	-	D-67 HALF-PAK	Bulk	Obsolete	Schottky	40 V	240A	610 mV @ 240 A	Fast Recovery =< 500ns, > 200mA (Io)	-	20 mA @ 40 V	10300pF @ 5V, 1MHz	-	-	Chassis Mount	D-67 HALF-PAK	-
JANS1N5811/TR DIODE GEN PURP 150V 6A B AXIAL Microchip Technology	2,579	RFQ	Datasheet	-	B, Axial	Tape & Reel (TR)	Active	Standard	150 V	6A	875 mV @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	-	-	Military	MIL-PRF-19500/477	Through Hole	B, Axial	-65°C ~ 175°C
UES1306E3 DIODE GEN PURP 400V 3A B AXIAL Microchip Technology	9,650	RFQ	-	-	B, Axial	Bulk	Active	Standard	400 V	3A	1.25 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	20 µA @ 400 V	-	-	-	Through Hole	B, Axial	-55°C ~ 150°C
241NQ035 DIODE SCHOTTKY 35V 240A D-67 Vishay General Semiconductor - Diodes Division	6,513	RFQ	Datasheet	-	D-67 HALF-PAK	Bulk	Obsolete	Schottky	35 V	240A	690 mV @ 240 A	Fast Recovery =< 500ns, > 200mA (Io)	-	20 mA @ 35 V	10300pF @ 5V, 1MHz	-	-	Chassis Mount	D-67 HALF-PAK	-
JANS1N5811 DIODE GEN PURP 150V 6A B AXIAL Microchip Technology	9,618	RFQ	-	-	B, Axial	Bulk	Active	Standard	150 V	6A	875 mV @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	-	-	Military	MIL-PRF-19500/477	Through Hole	B, Axial	-65°C ~ 175°C
JANTXV1N4148UB DIODE GEN PURP 75V 200MA UB Microchip Technology	2,548	RFQ	-	-	3-SMD, No Lead	Bulk	Discontinued at Digi-Key	Standard	75 V	200mA	1.2 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	20 ns	500 nA @ 75 V	4pF @ 0V, 1MHz	Military	MIL-PRF-19500/116	Surface Mount	UB	-65°C ~ 200°C
243NQ080 DIODE SCHOTTKY 80V 240A D-67 Vishay General Semiconductor - Diodes Division	5,888	RFQ	Datasheet	-	D-67 HALF-PAK	Bulk	Obsolete	Schottky	80 V	240A	860 mV @ 240 A	Fast Recovery =< 500ns, > 200mA (Io)	-	6 mA @ 80 V	5500pF @ 5V, 1MHz	-	-	Chassis Mount	D-67 HALF-PAK	-
DSA75-12B DIODE AVAL 1.2KV 110A DO203AB IXYS	3,797	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Box	Obsolete	Avalanche	1200 V	110A	1.17 V @ 150 A	Standard Recovery >500ns, > 200mA (Io)	-	6 mA @ 1200 V	-	-	-	Chassis, Stud Mount	DO-203AB	-40°C ~ 180°C
DSAI75-12B DIODE AVAL 1.2KV 110A DO203AB IXYS	7,320	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Box	Obsolete	Avalanche	1200 V	110A	1.17 V @ 150 A	Standard Recovery >500ns, > 200mA (Io)	-	6 mA @ 1200 V	-	-	-	Chassis, Stud Mount	DO-203AB	-40°C ~ 180°C
JANTXV1N5807URS DIODE GEN PURP 50V 3A B SQ-MELF Microchip Technology	7,211	RFQ	Datasheet	-	SQ-MELF, B	Bulk	Active	Standard	50 V	3A	875 mV @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	5 µA @ 50 V	60pF @ 10V, 1MHz	Military	MIL-PRF-19500/477	Surface Mount	B, SQ-MELF	-65°C ~ 175°C
JANTXV1N5809URS DIODE GEN PURP 100V 3A B SQ-MELF Microchip Technology	4,096	RFQ	Datasheet	-	SQ-MELF, B	Bulk	Active	Standard	100 V	3A	875 mV @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	5 µA @ 100 V	60pF @ 10V, 1MHz	Military	MIL-PRF-19500/477	Surface Mount	B, SQ-MELF	-65°C ~ 175°C
JANTXV1N5811URS DIODE GEN PURP 150V 3A B SQ-MELF Microchip Technology	4,849	RFQ	Datasheet	-	SQ-MELF, B	Bulk	Active	Standard	150 V	3A	875 mV @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	5 µA @ 150 V	60pF @ 10V, 1MHz	Military	MIL-PRF-19500/477	Surface Mount	B, SQ-MELF	-65°C ~ 175°C
1N6076US/TR UFR,FRR Microchip Technology	9,954	RFQ	Datasheet	-	SQ-MELF, E	Tape & Reel (TR)	Active	Standard	50 V	1.3A	1.76 V @ 18.8 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	5 µA @ 50 V	-	-	-	Surface Mount	E-MELF	-65°C ~ 155°C
1N6077US/TR UFR,FRR Microchip Technology	9,225	RFQ	Datasheet	-	SQ-MELF, E	Tape & Reel (TR)	Active	Standard	100 V	1.3A	1.76 V @ 18.8 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	5 µA @ 100 V	-	-	-	Surface Mount	E-MELF	-65°C ~ 155°C
VS-T85HF10 DIODE GEN PURP 100V 85A D-55 Vishay General Semiconductor - Diodes Division	6,264	RFQ	Datasheet	-	D-55 T-Module	Bulk	Active	Standard	100 V	85A	-	Standard Recovery >500ns, > 200mA (Io)	-	20 mA @ 100 V	-	-	-	Chassis Mount	D-55	-
UES1306E3/TR DIODE GP REV 400V 3A B AXIAL Microchip Technology	9,644	RFQ	-	-	B, Axial	Tape & Reel (TR)	Active	Standard, Reverse Polarity	400 V	3A	1.25 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	20 µA @ 400 V	-	-	-	Through Hole	B, Axial	-55°C ~ 150°C
JANTXV1N4148UB/TR DIODE GEN PURP 75V 200MA UB Microchip Technology	3,428	RFQ	-	-	3-SMD, No Lead	Tape & Reel (TR)	Active	Standard	75 V	200mA	1.2 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	20 ns	500 nA @ 75 V	4pF @ 0V, 1MHz	Military	MIL-PRF-19500/116	Surface Mount	UB	-65°C ~ 200°C
UES1306/TR DIODE GP REV 400V 3A B AXIAL Microchip Technology	2,208	RFQ	-	-	B, Axial	Tape & Reel (TR)	Active	Standard, Reverse Polarity	400 V	3A	1.25 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	20 µA @ 400 V	-	-	-	Through Hole	B, Axial	-55°C ~ 150°C

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