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Microchip Technology 1N6077US/TR
- Part No.:
- 1N6077US/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- SQ-MELF, E
- Datasheet:
-
1N6077US/TR.pdf
- Description:
- UFR,FRR
- Quantity:
- Payment:
- Shipping:
Inventory:9,225
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Product details
Overview
1N6077US/TR from Microsemi is an ultrafast recovery surface-mount glass power rectifier diode rated for 100 V working peak reverse voltage, 6.0 A average forward current at TEC = 70°C, and 30 ns reverse recovery time. It features voidless hermetic glass sealing with Category I metallurgical bond, triple-layer passivation, and is designed for high-reliability military and aerospace switching power supplies where failure tolerance is critical.
For engineers reviewing the 1N6077US/TR datasheet, 1N6077US/TR pinout, 1N6077US/TR application, or 1N6077US/TR equivalent, key selection criteria include its 100 V VRWM rating, 1.76 V forward voltage at 18.8 A pulsed test current, 75 A surge capability, low 8.5°C/W thermal resistance, and compatibility with E-MELF (D-5B) surface-mount assembly processes.
Technical Context
This device belongs to Microsemi's ultrafast recovery rectifier family optimized for high-efficiency DC/DC conversion in harsh-environment systems. Its 30 ns trr and controlled avalanche behavior enable stable operation under fast-switching transients, while the voidless glass package ensures hermeticity and radiation hardness per MicroNote 050.
The 1N6077US/TR uses a single-junction planar silicon structure with tungsten slug heat path and copper end caps. Its thermal design supports junction temperatures from –65°C to +155°C, and it meets MIL-PRF-19500 screening requirements when ordered with MQ/MX/MV/SP prefixes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 100 V - Maximum continuous reverse voltage before breakdown; defines safe operating range in flyback and forward converter output stages. |
| IF(AV) @ TEC=70°C | 6.0 A - Sustained DC output current capability with external heatsinking via case (EC), enabling compact PSU designs. |
| VF @ IF=18.8 A (pulsed) | 1.76 V - Low conduction loss at high transient currents, reducing power dissipation during switching transitions. |
| trr | 30 ns - Ultrafast recovery minimizes reverse recovery charge (Qrr) and associated switching losses in high-frequency SMPS. |
| RθJEC | 8.5°C/W - Thermal resistance from junction to external case enables efficient heat transfer to PCB copper or heatsink in surface-mount layout. |
| IFSM (8.3 ms) | 75 A - High surge current withstand allows robust startup and fault handling without degradation in industrial power modules. |
| IR @ VRWM | 5.0 µA - Low leakage ensures minimal standby power loss and stable bias in precision hold-up circuits. |
Pinout & Package
Package: E-MELF (D-5B), hermetically sealed voidless glass with tungsten slugs and copper end caps; cathode indicated by band; RoHS-compliant Sn/Pb termination; tape-and-reel compliant with EIA-481-B.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to input-side switching node (e.g., transformer secondary or MOSFET drain); requires thermal relief pad for solder joint reliability. |
| Cathode | Forward current exit point | Connected to output filter capacitor or load return; marked by visible band; must be routed with low-inductance path to minimize ringing. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates internal moisture and contaminants, ensuring long-term parametric stability in vacuum or high-humidity environments. |
| Category I metallurgical bond | Provides mechanical integrity and thermal continuity between die and tungsten slug, supporting repeated thermal cycling up to 155°C junction. |
| Triple-layer passivation | Enhances surface insulation and prevents leakage path formation on glass surface under high humidity or contamination exposure. |
| Controlled avalanche capability | Allows safe clamping of inductive spikes without destructive failure, supporting ruggedized flyback snubberless designs. |
| Inherent radiation hardness | Validated per Microsemi MicroNote 050 for total ionizing dose (TID) and single-event effects (SEE), suitable for space-grade applications. |
Applications
| Aerospace Power Conversion | Military Radar Transmitter Supplies |
|---|---|
Use Scenario: DC/DC conversion in satellite bus power distribution units operating in vacuum and wide temperature extremes. IC Role / Device Role / Timing Role: Output rectifier in resonant LLC or phase-shifted full-bridge converters delivering regulated 28 V or 42 V bus power. Use Value: Hermetic voidless glass construction prevents outgassing and parameter drift, while 30 ns trr maintains efficiency at >200 kHz switching frequencies. | Use Scenario: High-pulse-power supply for magnetron or klystron modulators in ground-based radar systems. IC Role / Device Role / Timing Role: Primary rectifier in high-voltage, high-surge-capability front-end stage converting AC line to charged capacitor banks. Use Value: 75 A IFSM and controlled avalanche behavior absorb repetitive 10–100 µs pulse surges without degradation over 10+ year field life. |
| Avionics Flight Control PSUs | High-Reliability Industrial UPS Modules |
Use Scenario: Redundant 28 V DC power supplies for flight-critical actuators and sensors in commercial aircraft. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacement in isolated forward converters requiring zero-failure probability. Use Value: MIL-PRF-19500 screening eligibility (with MX prefix) and –65°C to +155°C operation ensure compliance with DO-160 environmental stress profiles. | Use Scenario: Battery backup and inverter output stage in medical or datacenter uninterruptible power systems. IC Role / Device Role / Timing Role: Output rectifier in bidirectional DC/AC inverter bridge with regenerative braking energy recovery. Use Value: Low RθJEC (8.5°C/W) and 155°C max junction temperature support continuous 6 A operation in confined, fanless enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Vishay VS-6EWH02-M3 | 6 A, 200 V VRWM, 35 ns trr, TO-277 package, higher VF (1.95 V @ 6 A) | Higher voltage margin but larger footprint and higher conduction loss; not hermetically sealed | Preferred where 200 V rating is required and radiation hardness is not critical |
| ON Semiconductor MUR620CT | 6 A, 200 V VRWM, dual common-cathode die in TO-220AC, 35 ns trr, 1.85 V VF | Through-hole mounting only; no hermetic seal; higher thermal resistance (2.5°C/W case-to-heatsink, but no direct JEC metric) | Used in cost-sensitive industrial SMPS where surface-mount and hermeticity are not mandatory |
Compared with VS-6EWH02-M3 and MUR620CT, the 1N6077US/TR delivers superior reliability in radiation-exposed or vacuum environments due to its voidless glass seal and Category I bond, while offering lower VF and tighter trr control-but requires E-MELF placement equipment and supports only 100 V VRWM.
Availability
1N6077US/TR is available at Aetrix Electronics and suitable for aerospace power conversion, military radar transmitter supplies, and avionics flight control PSUs requiring stable component supply across extended product lifecycles and obsolescence-sensitive programs.
Supply support for 1N6077US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, discretes, and RF solutions for defense, aerospace, and industrial markets.
The 1N6077US/TR belongs to Microsemi's ultrafast hermetic rectifier product line, engineered specifically for mission-critical power conversion where parametric stability, radiation tolerance, and zero-failure operation are non-negotiable design requirements.
FAQ
What is the maximum junction temperature rating for the 1N6077US/TR?
The 1N6077US/TR has a specified junction temperature range of –65°C to +155°C. This wide operating envelope supports deployment in extreme environments such as spacecraft thermal vacuum chambers or engine-mounted avionics enclosures. The 155°C upper limit is enabled by the voidless glass package and tungsten slug thermal path, and must be maintained using appropriate PCB copper area or heatsinking to keep RθJEC at its rated 8.5°C/W.
Does the 1N6077US/TR have a cathode band marking?
Yes, the 1N6077US/TR uses a visible cathode band on the glass body to identify polarity-consistent with industry-standard diode marking conventions. This band corresponds to the cathode terminal, which must be connected toward the positive output side of the rectifier circuit. The absence of part number marking (per datasheet) means visual inspection of the band is the sole on-board identification method.
Is the 1N6077US/TR suitable for use in space-grade applications?
Yes, the 1N6077US/TR is inherently radiation-hardened per Microsemi MicroNote 050 and qualifies for MIL-PRF-19500 screening (e.g., as MX6077) for JAN/JANTXV levels. Its voidless hermetic glass construction, Category I metallurgical bond, and triple-layer passivation make it suitable for LEO and GEO satellite power systems where TID tolerance and SEE immunity are required without additional shielding.
What is the reverse recovery time (trr) specification for the 1N6077US/TR?
The 1N6077US/TR has a maximum reverse recovery time of 30 ns, measured at IF = 0.5 A, IRM = 1.0 A, and IR(REC) = 0.25 A. This ultrafast trr enables high-frequency switching (>200 kHz) with minimal Qrr-related losses, making the 1N6077US/TR especially effective in resonant converters and high-density SMPS where efficiency and EMI control are critical.
What package type does the 1N6077US/TR use, and is it compatible with standard SMT reflow?
The 1N6077US/TR uses the E-MELF (D-5B) surface-mount package with Sn/Pb terminations. It is compatible with standard leaded-SMT reflow profiles, including a maximum solder temperature of 260°C for 10 seconds. Pad layout recommendations are provided in the datasheet, and optional center adhesive spots (0.080″ diameter) may be used for enhanced mechanical retention in high-vibration environments.
1N6077US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, E
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 100 V
- Current - Average Rectified (Io):
- 1.3A
- Voltage - Forward (Vf) (Max) @ If:
- 1.76 V @ 18.8 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 30 ns
- Current - Reverse Leakage @ Vr:
- 5 µA @ 100 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- E-MELF
- Operating Temperature - Junction:
- -65°C ~ 155°C
1N6077US/TR FAQ
1.How can I place an order for 1N6077US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N6077US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N6077US/TR reliable?
The price and inventory of 1N6077US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6077US/TR is usually 5 days.
3.What payment methods are accepted for 1N6077US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6077US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N6077US/TR?
1N6077US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N6077US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N6077US/TR?
For technical support, including 1N6077US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6077US/TR requirements.
6.How does Aetrix verify that 1N6077US/TR is sourced from the original manufacturer or authorized distributors?
All 1N6077US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6077US/TR meets industry standards.
7.What is the process for return or replacement of 1N6077US/TR?
All 1N6077US/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N6077US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N6077US/TR part is unused and in its original packaging.
Return procedure for 1N6077US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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