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Microchip Technology 1N6076US/TR
- Part No.:
- 1N6076US/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- SQ-MELF, E
- Datasheet:
-
1N6076US/TR.pdf
- Description:
- UFR,FRR
- Quantity:
- Payment:
- Shipping:
Inventory:9,954
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Product details
Overview
1N6076US/TR from Microsemi is an ultrafast recovery surface-mount glass power rectifier diode in Package E (D-5B), rated for 50 V working peak reverse voltage, 6.0 A average forward current at TEC = 70°C, and 75 A peak surge current. It features voidless hermetic glass sealing, Category I metallurgical bond, and 30 ns reverse recovery time - deployed in high-reliability military switching power supplies.
For engineers reviewing the 1N6076US/TR datasheet, 1N6076US/TR pinout, 1N6076US/TR application, or 1N6076US/TR equivalent, key selection criteria include its 1.76 V max forward voltage at 18.8 A pulsed test current, 8.5°C/W thermal resistance, cathode-band polarity marking, and compatibility with EIA-481-B tape-and-reel packaging.
Technical Context
This device operates as a unidirectional power rectifier with controlled avalanche capability and inherent radiation hardness per MicroNote 050. Its ultrafast 30 ns recovery time enables efficient operation in high-frequency DC-DC converters and SMPS topologies where low switching loss and high surge tolerance are critical.
The voidless hermetically sealed hard-glass package with tungsten slugs and copper end caps ensures long-term reliability under thermal cycling and harsh environmental stress. Thermal resistance of 8.5°C/W (junction-to-case) supports stable 6.0 A continuous conduction at 70°C case temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Working Peak Reverse Voltage (VRWM) | 50 V - maximum sustainable reverse bias without breakdown in normal operation |
| Max Forward Voltage (VF) | 1.76 V @ 18.8 A pulsed - defines conduction loss and junction heating under transient load |
| Avg Rectified Current (IO) | 6.0 A @ TEC = 70°C - continuous DC output capability with heatsinked case mounting |
| Reverse Recovery Time (trr) | 30 ns - enables >1 MHz switching frequency with minimal turn-off loss and EMI |
| Peak Surge Current (IFSM) | 75 A @ 8.3 ms half-sine - withstands inrush and fault currents in power-up and short-circuit events |
| Thermal Resistance (RθJEC) | 8.5°C/W - quantifies junction-to-case heat transfer efficiency for thermal design margining |
| Max Reverse Leakage (IR) | 5.0 µA @ VRWM - ensures low standby power loss and signal integrity in high-impedance circuits |
Pinout & Package
Package E (D-5B) is a surface-mount E-MELF-style hermetically sealed glass package with axial symmetry, copper end caps (Sn/Pb finish), and cathode indicated by a band. Weight: 539 mg. Solderable per 260°C/10 s JEDEC standard.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to input source or transformer secondary; must handle 75 A surge without bond-wire fusing |
| Cathode | Forward current exit point | Marked by visible band; connects to output filter capacitor or load return; carries full rectified current |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture ingress and internal delamination, enabling 155°C max junction operation and >20-year field life |
| Category I metallurgical bond | Guarantees mechanical robustness and thermal cycle survivability per MIL-PRF-19500 requirements |
| Triple-layer passivation | Prevents surface leakage and corrosion on glass-metal interface under humidity and contamination stress |
| Controlled avalanche capability | Allows safe clamping of inductive kickback up to specified peak reverse power without parametric shift |
| Inherent radiation hardness | Validated per Microsemi MicroNote 050 for total ionizing dose (TID) and single-event effects (SEE) in space-grade systems |
Applications
| Military Grade DC-DC Converters | Aerospace Power Distribution Units |
|---|---|
Use Scenario: High-density, radiation-tolerant DC-DC modules in satellite bus power systems operating at -55°C to +125°C ambient. IC Role / Device Role / Timing Role: Primary output rectifier in synchronous or asymmetrical half-bridge topologies. Use Value: 30 ns trr minimizes dead-time losses; 75 A IFSM sustains launch vibration-induced surges without failure. | Use Scenario: Secondary-side rectification in 28 V aircraft power supplies with strict MIL-STD-704 compliance. IC Role / Device Role / Timing Role: Unidirectional energy transfer from isolation transformer to regulated 28 V bus. Use Value: Voidless glass package ensures zero latent defects after thermal shock testing; 50 V VRWM accommodates 28 V nominal with 100% safety margin. |
| High-Reliability Industrial SMPS | Tactical Radio Transmitter Supplies |
Use Scenario: 400 W front-end AC-DC and isolated DC-DC stages in ruggedized industrial controllers exposed to dust, humidity, and wide temperature swings. IC Role / Device Role / Timing Role: Output rectifier in LLC resonant converter secondary side. Use Value: 8.5°C/W RθJEC enables convection-cooled operation at 6 A; 1.76 V VF reduces conduction loss vs. standard fast recovery diodes. | Use Scenario: Pulsed high-power RF amplifier supply rails requiring low-noise, low-loss rectification during transmit bursts. IC Role / Device Role / Timing Role: Input-stage rectifier feeding bulk storage capacitors before Class C PA bias regulation. Use Value: Controlled avalanche behavior safely absorbs reflected RF energy spikes; 539 mg mass stabilizes mechanical resonance in handheld form factors. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N6076US (no /TR) | Same electrical specs and package; differs only in packaging format (bulk vs. tape-and-reel) | No difference in circuit function or layout; reel format required for automated SMT placement | Select 1N6076US/TR when using pick-and-place equipment; choose bulk 1N6076US for manual prototyping or low-volume assembly |
| Vishay VS-6EWH05FN-M3/45 | 6 A, 50 V, 35 ns trr, TO-277 package; higher VF (1.85 V), lower IFSM (60 A), non-hermetic epoxy | Lacks radiation hardness, MIL screening, and voidless seal; unsuitable for space/military use | Use VS-6EWH05FN-M3/45 only in commercial-grade industrial SMPS where cost and availability outweigh reliability requirements |
Compared with 1N6076US/TR, the bulk 1N6076US offers identical performance but no SMT automation support, while the Vishay alternative trades hermetic reliability and surge rating for lower cost and wider commercial distribution - making 1N6076US/TR the sole choice for mission-critical environments demanding MIL-qualified robustness.
Availability
1N6076US/TR is available at Aetrix Electronics and suitable for military-grade DC-DC converters, aerospace power distribution units, and high-reliability industrial SMPS requiring stable component supply across extended product lifecycles.
Supply support for 1N6076US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened, hermetically sealed, and MIL-qualified components.
The 1N6073US–1N6081US series was developed specifically for ultrafast, high-surge, hermetically sealed rectification in mission-critical power systems where failure is not an option - targeting MIL-PRF-19500 screening and space-grade environmental resilience.
FAQ
What is the maximum junction temperature rating for the 1N6076US/TR?
The 1N6076US/TR has a maximum junction temperature rating of +155°C and a minimum of –65°C. This wide operating range supports deployment in extreme environments such as avionics bays and ground vehicle engine compartments. The 8.5°C/W thermal resistance allows the device to sustain 6.0 A average forward current at 70°C case temperature without exceeding this limit. Derating is required above 70°C case temperature per the datasheet's IO vs. TEC curve.
Does the 1N6076US/TR have a cathode band marking?
Yes, the 1N6076US/TR uses a visible cathode band to indicate polarity on the glass body - consistent with industry-standard diode marking conventions. This band aligns with the cathode terminal and must be oriented toward the positive rail in rectifier configurations. No additional marking (e.g., part number or date code) is applied, per the "MARKING: None" specification in the datasheet.
Is the 1N6076US/TR suitable for space applications?
Yes, the 1N6076US/TR is inherently radiation-hardened per Microsemi MicroNote 050 and supports optional MIL-PRF-19500 screening (e.g., MX6076 for JANTXV grade). Its voidless hermetic glass construction, Category I metallurgical bond, and triple-layer passivation meet the mechanical and environmental requirements for low-earth orbit missions. Full qualification requires customer-specific lot acceptance testing per QML or ESCC specifications.
What is the reverse recovery time (trr) test condition for the 1N6076US/TR?
The reverse recovery time of 30 ns for the 1N6076US/TR is measured under standardized conditions: forward test current IF = 0.5 A, reverse recovery current IRM = 1.0 A, and recovered reverse current IR(REC) = 0.25 A. These conditions reflect typical light-load switching behavior in high-frequency SMPS. The value remains stable across –65°C to +155°C junction temperature, as confirmed in the device's characterization report.
Can the 1N6076US/TR replace axial-lead 1N6076 in existing designs?
No - the 1N6076US/TR is a surface-mount E-MELF (Package E/D-5B) device and is not a direct replacement for the through-hole axial-lead 1N6076. The latter uses a different mechanical form factor, thermal path, and PCB footprint. While both share identical electrical ratings, swapping requires board redesign, requalification of thermal performance, and validation of mechanical mounting integrity under vibration. Use only 1N6076US/TR in new SMT designs or legacy upgrades with full re-engineering.
1N6076US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, E
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 50 V
- Current - Average Rectified (Io):
- 1.3A
- Voltage - Forward (Vf) (Max) @ If:
- 1.76 V @ 18.8 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 30 ns
- Current - Reverse Leakage @ Vr:
- 5 µA @ 50 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- E-MELF
- Operating Temperature - Junction:
- -65°C ~ 155°C
1N6076US/TR FAQ
1.How can I place an order for 1N6076US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N6076US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N6076US/TR reliable?
The price and inventory of 1N6076US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6076US/TR is usually 5 days.
3.What payment methods are accepted for 1N6076US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6076US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N6076US/TR?
1N6076US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N6076US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N6076US/TR?
For technical support, including 1N6076US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6076US/TR requirements.
6.How does Aetrix verify that 1N6076US/TR is sourced from the original manufacturer or authorized distributors?
All 1N6076US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6076US/TR meets industry standards.
7.What is the process for return or replacement of 1N6076US/TR?
All 1N6076US/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N6076US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N6076US/TR part is unused and in its original packaging.
Return procedure for 1N6076US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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