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Single Diodes
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
PMEG3010BEV,115DIODE SCHOTTKY 30V 1A SOT666 NXP Semiconductors |
104,000 | 0.00 |
|
Datasheet |
- | SOT-563, SOT-666 | Bulk | Active | Schottky | 30 V | 1A | 560 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150 µA @ 30 V | 70pF @ 1V, 1MHz | - | - | Surface Mount | SOT-666 | 150°C (Max) |
|
PMEG2015EH,115DIODE SCHOTTKY 20V 1.5A SOD123F NXP Semiconductors |
94,251 | 0.00 |
|
Datasheet |
- | SOD-123F | Bulk | Active | Schottky | 20 V | 1.5A | 660 mV @ 1.5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 70 µA @ 20 V | 50pF @ 1V, 1MHz | - | - | Surface Mount | SOD-123F | 150°C (Max) |
|
|
PMEG1020EV,115DIODE SCHOTTKY 10V 2A SOT666 NXP Semiconductors |
180,000 | 0.00 |
|
Datasheet |
- | SOT-563, SOT-666 | Bulk | Active | Schottky | 10 V | 2A | 460 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3 mA @ 10 V | 45pF @ 5V, 1MHz | - | - | Surface Mount | SOT-666 | 150°C (Max) |
|
PMEG2010EPASXDIODE SCHOTTKY 20V 1A DFN2020D-3 NXP USA Inc. |
30,000 | 0.00 |
|
Datasheet |
- | 3-UDFN Exposed Pad | Bulk | Active | Schottky | 20 V | 1A | 375 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 335 µA @ 20 V | 175pF @ 1V, 1MHz | Automotive | AEC-Q101 | Surface Mount | DFN2020D-3 | 150°C (Max) |
|
1PS74SB23,125DIODE SCHOTTKY 25V 1A 6TSOP NXP Semiconductors |
30,000 | 0.00 |
|
Datasheet |
- | SC-74, SOT-457 | Bulk | Active | Schottky | 25 V | 1A | 450 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 25 V | 100pF @ 4V, 1MHz | - | - | Surface Mount | 6-TSOP | 125°C (Max) |
|
PMEG45U10EPDAZDIODE SCHOTTKY 45V 10A CFP15 NXP Semiconductors |
1,329,000 | 0.00 |
|
Datasheet |
- | TO-277, 3-PowerDFN | Bulk | Active | Schottky | 45 V | 10A | 490 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 16 ns | 20 µA @ 10 V | 1170pF @ 1V, 1MHz | - | - | Surface Mount | CFP15 | -55°C ~ 150°C |
|
BYV25FX-600,127DIODE GEN PURP 600V 5A TO220F NXP USA Inc. |
4,000 | 0.00 |
|
Datasheet |
- | TO-220-2 Full Pack | Bulk | Active | Standard | 600 V | 5A | 1.9 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 50 µA @ 600 V | - | - | - | Through Hole | TO-220F | 150°C (Max) |
|
BYC5D-500,127DIODE GEN PURP 500V 5A TO220AC NXP USA Inc. |
15,000 | 0.00 |
|
Datasheet |
- | TO-220-2 | Bulk | Active | Standard | 500 V | 5A | 2 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 16 ns | 40 µA @ 500 V | - | - | - | Through Hole | TO-220AC | 150°C (Max) |
|
BYC8DX-600,127DIODE GEN PURP 600V 8A TO220F NXP USA Inc. |
4,689 | 0.00 |
|
Datasheet |
- | TO-220-2 Full Pack | Bulk | Active | Standard | 600 V | 8A | 2.9 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 20 ns | 40 µA @ 600 V | - | - | - | Through Hole | TO-220F | 150°C (Max) |
|
|
BYC10D-600,127DIODE GEN PURP 500V 10A TO220AC NXP USA Inc. |
2,763 | 0.00 |
|
Datasheet |
- | TO-220-2 | Bulk | Active | Standard | 500 V | 10A | 2.5 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 18 ns | 200 µA @ 600 V | - | - | - | Through Hole | TO-220AC | 150°C (Max) |
