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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
NRVBB4030T4G DIODE SCHOTTKY 30V 40A D2PAK onsemi	6,765	RFQ	Datasheet	SWITCHMODE™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	Schottky	30 V	40A	550 mV @ 40 A	Fast Recovery =< 500ns, > 200mA (Io)	-	350 µA @ 30 V	-	-	-	Surface Mount	D2PAK	-65°C ~ 175°C
FFSD0465A DIODE SIL CARB 650V 7.6A DPAK onsemi	2,442	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	7.6A	1.75 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	258pF @ 1V, 100kHz	-	-	Surface Mount	TO-252 (DPAK)	-55°C ~ 175°C
FFSH1665A DIODE SIL CARB 650V 23A TO247-2 onsemi	8,896	RFQ	Datasheet	-	TO-247-2	Bulk	Obsolete	SiC (Silicon Carbide) Schottky	650 V	23A	-	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	887pF @ 1V, 100kHz	-	-	Through Hole	TO-247-2	-55°C ~ 150°C
FFSP0465A DIODE SIL CARB 650V 8.6A TO220-2 onsemi	792	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	8.6A	1.75 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	258pF @ 1V, 100kHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
FFSB0465A DIODE SIL CARB 650V 7.7A D2PAK-2 onsemi	770	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	7.7A	1.75 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	258pF @ 1V, 100kHz	-	-	Surface Mount	TO-263 (D2PAK)	-55°C ~ 175°C
MBRB2515LT4G DIODE SCHOTTKY 15V 25A D2PAK onsemi	214	RFQ	Datasheet	SWITCHMODE™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	Schottky	15 V	25A	450 mV @ 25 A	Fast Recovery =< 500ns, > 200mA (Io)	-	15 mA @ 15 V	-	-	-	Surface Mount	D2PAK	100°C (Max)
FFSPF0665A DIODE SIC 650V 6A TO220F-2FS onsemi	898	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	6A	1.75 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	361pF @ 1V, 100kHz	-	-	Through Hole	TO-220F-2FS	-55°C ~ 175°C
FFSD0865A DIODE SIL CARBIDE 650V 15A DPAK onsemi	2,500	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	15A	1.75 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	463pF @ 1V, 100kHz	-	-	Surface Mount	TO-252 (DPAK)	-55°C ~ 175°C
1N486B DIODE GEN PURP 250V 200MA DO35 onsemi	14,945	RFQ	Datasheet	-	DO-204AH, DO-35, Axial	Bulk	Active	Standard	250 V	200mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	-	50 nA @ 225 V	-	-	-	Through Hole	DO-204AH (DO-35)	175°C
RHRG5060 DIODE GEN PURP 600V 50A TO247-2 onsemi	1,778	RFQ	Datasheet	-	TO-247-2	Tube	Active	Avalanche	600 V	50A	2.1 V @ 50 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	250 µA @ 600 V	-	-	-	Through Hole	TO-247-2	-65°C ~ 175°C

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