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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
FFSPF0865A DIODE SIC 650V 8A TO220F-2FS onsemi	915	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	8A	1.75 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	463pF @ 1V, 100kHz	-	-	Through Hole	TO-220F-2FS	-55°C ~ 175°C
FFSPF1065A DIODE SIC 650V 10A TO220F-2FS onsemi	930	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	10A	-	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	575pF @ 1V, 100kHz	-	-	Through Hole	TO-220F-2FS	-55°C ~ 175°C
FFH75H60S DIODE GEN PURP 600V 75A TO247-2 onsemi	1,196	RFQ	Datasheet	-	TO-247-2	Tube	Obsolete	Standard	600 V	75A	2.2 V @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	100 µA @ 600 V	-	-	-	Through Hole	TO-247-2	-65°C ~ 175°C
PCFFS4065AF DIODE SIL CARBIDE 650V 40A DIE onsemi	1,364	RFQ	-	-	Die	Tray	Obsolete	SiC (Silicon Carbide) Schottky	650 V	40A	1.75 V @ 40 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	1989pf @ 1V, 100kHz	-	-	Surface Mount	Die	-55°C ~ 175°C
FFSM0865A DIODE SIL CARB 650V 9.6A 4PQFN onsemi	3,000	RFQ	Datasheet	-	4-PowerTSFN	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	9.6A	1.75 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	463pF @ 1V, 100kHz	-	-	Surface Mount	4-PQFN (8x8)	-55°C ~ 175°C
FFSB1265A DIODE SIL CARB 650V 14A D2PAK-3 onsemi	670	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	14A	1.75 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	665pF @ 1V, 100kHz	-	-	Surface Mount	TO-263 (D2PAK)	-65°C ~ 175°C
PCFF75H60F RECTIFIER WAFER DIE onsemi	2,240	RFQ	-	-	-	Tray	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
NDSH10120C-F155 SIC DIODE GEN2.0 1200V TO247-2L onsemi	450	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	12A	1.75 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	680pF @ 1V, 100kHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
FFSPF2065A DIODE SIC 650V 20A TO220F-2FS onsemi	1,284	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	20A	-	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	1085pF @ 1V, 100kHz	-	-	Through Hole	TO-220F-2FS	-55°C ~ 175°C
FFSH3065A DIODE SIL CARB 650V 26A TO247-2 onsemi	2,045	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	26A	-	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	1705pF @ 1V, 100kHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C

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