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Single Diodes
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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UF4007 R1GDIODE GEN PURP 1A DO204AL Taiwan Semiconductor Corporation |
6,441 | 0.00 |
|
Datasheet |
- | DO-204AL, DO-41, Axial | Tape & Reel (TR) | Active | Standard | 1000 V | 1A | 1.7 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 5 µA @ 1000 V | 17pF @ 4V, 1MHz | - | - | Through Hole | DO-204AL (DO-41) | -55°C ~ 150°C |
|
ES1DL RHGDIODE GEN PURP 200V 1A SUB SMA Taiwan Semiconductor Corporation |
9,744 | 0.00 |
|
Datasheet |
- | DO-219AB | Tape & Reel (TR) | Active | Standard | 200 V | 1A | 950 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 200 V | 10pF @ 1V, 1MHz | - | - | Surface Mount | Sub SMA | -55°C ~ 150°C |
|
|
ES1HL RHGDIODE GEN PURP 500V 1A SUB SMA Taiwan Semiconductor Corporation |
3,397 | 0.00 |
|
Datasheet |
- | DO-219AB | Tape & Reel (TR) | Active | Standard | 500 V | 1A | 1.7 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 500 V | 8pF @ 1V, 1MHz | - | - | Surface Mount | Sub SMA | -55°C ~ 150°C |
|
ES1JF R2GDIODE GEN PURP 600V 1A SMAF Taiwan Semiconductor Corporation |
9,753 | 0.00 |
|
Datasheet |
- | DO-221AC, SMA Flat Leads | Tape & Reel (TR) | Active | Standard | 600 V | 1A | 1.7 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 600 V | 9pF @ 4V, 1MHz | - | - | Surface Mount | SMAF | -55°C ~ 150°C |
|
|
RS1ALHRHGDIODE GEN PURP 50V 800MA SUB SMA Taiwan Semiconductor Corporation |
4,576 | 0.00 |
|
Datasheet |
- | DO-219AB | Tape & Reel (TR) | Active | Standard | 50 V | 800mA | 1.3 V @ 800 mA | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 50 V | 10pF @ 4V, 1MHz | Automotive | AEC-Q101 | Surface Mount | Sub SMA | -55°C ~ 150°C |
|
|
RS1DL RHGDIODE GP 200V 800MA SUB SMA Taiwan Semiconductor Corporation |
7,619 | 0.00 |
|
Datasheet |
- | DO-219AB | Tape & Reel (TR) | Active | Standard | 200 V | 800mA | 1.3 V @ 800 mA | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 200 V | 10pF @ 4V, 1MHz | - | - | Surface Mount | Sub SMA | -55°C ~ 150°C |
|
|
RSFJL RHGDIODE GP 600V 500MA SUB SMA Taiwan Semiconductor Corporation |
6,370 | 0.00 |
|
Datasheet |
- | DO-219AB | Tape & Reel (TR) | Active | Standard | 600 V | 500mA | 1.3 V @ 500 mA | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 5 µA @ 600 V | 4pF @ 4V, 1MHz | - | - | Surface Mount | Sub SMA | -55°C ~ 150°C |
|
|
S1JLHRHGDIODE GEN PURP 600V 1A SUB SMA Taiwan Semiconductor Corporation |
6,993 | 0.00 |
|
Datasheet |
- | DO-219AB | Tape & Reel (TR) | Active | Standard | 600 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 1.8 µs | 5 µA @ 600 V | 9pF @ 4V, 1MHz | Automotive | AEC-Q101 | Surface Mount | Sub SMA | -55°C ~ 175°C |
|
|
S1ML RHGDIODE GEN PURP 1A SUB SMA Taiwan Semiconductor Corporation |
5,857 | 0.00 |
|
Datasheet |
- | DO-219AB | Tape & Reel (TR) | Active | Standard | 1000 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 1.8 µs | 5 µA @ 1000 V | 9pF @ 4V, 1MHz | - | - | Surface Mount | Sub SMA | -55°C ~ 175°C |
|
|
SS115LHRHGDIODE SCHOTTKY 150V 1A SUB SMA Taiwan Semiconductor Corporation |
6,306 | 0.00 |
|
Datasheet |
- | DO-219AB | Tape & Reel (TR) | Active | Schottky | 150 V | 1A | 900 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 150 V | - | Automotive | AEC-Q101 | Surface Mount | Sub SMA | -55°C ~ 150°C |
