Taiwan Semiconductor Corporation UF4007 R1G

Overview

UF4007 R1G from Taiwan Semiconductor is a 1A, 1000V ultrafast recovery rectifier diode in DO-204AL (DO-41) package, featuring 1.7V forward voltage at 1A, 75ns reverse recovery time, and 150°C maximum junction temperature - used in high-frequency switching power supplies and freewheeling paths.

For engineers reviewing the UF4007 R1G datasheet, UF4007 R1G pinout, UF4007 R1G application, or UF4007 R1G equivalent, key selection criteria include peak reverse voltage rating, thermal resistance (R_θJL = 15°C/W), surge current capability (I_FSM = 30A), and AEC-Q101 qualification status for automotive-grade reliability.

Technical Context

This single-die, glass-passivated silicon rectifier operates with ultrafast recovery (t_rr ≤ 75 ns) under 0.5A forward / 1.0A reverse test conditions, enabling high-efficiency operation in DC–DC converters and SMPS topologies above 50 kHz. Its low VF and low C_J (17 pF) reduce conduction and switching losses.

The device supports continuous operation up to +150°C junction temperature and meets JESD201 Class 2 whisker resistance and RoHS/halogen-free compliance per IEC 61249-2-21 - critical for automotive and industrial environments where thermal stability and long-term solder joint integrity are required.

Key Specifications

Pinout & Package

Package: DO-204AL (DO-41), axial leaded, glass-passivated, cathode indicated by band. Weight ≈ 0.330 g. Leads are pure tin plated, solderable per J-STD-002.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast rectifier applications.

Compared with STTH1R06 and MUR110, the UF4007 R1G uniquely combines 1000V rating, DO-41 form factor, and optional AEC-Q101 qualification - making it optimal for space-constrained automotive and industrial rectification where both voltage headroom and reliability certification matter.

Availability

UF4007 R1G is available at Aetrix Electronics and suitable for DC–DC converters, switching inverters, and automotive lighting systems requiring stable component supply and long-term manufacturability.

Supply support for UF4007 R1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving global industrial, automotive, and consumer markets since 1979.

The UF4007 R1G belongs to TSC's UF400x ultrafast rectifier family, engineered specifically for high-efficiency, high-reliability power conversion in thermally demanding and safety-critical applications.

FAQ

What is the peak repetitive reverse voltage rating of UF4007 R1G?

The UF4007 R1G has a peak repetitive reverse voltage (V_RRM) rating of 1000 V. This means it can reliably block up to 1000 volts of reverse polarity voltage in continuous operation without breakdown. The rating is validated per JEDEC standards and applies across the full operating temperature range from –55°C to +150°C. This high V_RRM makes UF4007 R1G suitable for use in 400–800 VDC bus applications and universal-input offline power supplies.

Is UF4007 R1G qualified for automotive applications?

UF4007 R1G itself is not AEC-Q101 qualified; however, the UF4007H variant (same die, AEC-Q101 tested) is available. The "R1G" suffix denotes tape-and-reel packaging (5,000 pcs) and green compound, but does not imply automotive qualification. For automotive designs, specify UF4007H to ensure compliance with AEC-Q101 stress tests including temperature cycling, HTRB, and ESD. Always verify qualification status using Taiwan Semiconductor's official part number cross-reference tool.

What is the forward voltage drop of UF4007 R1G at rated current?

The forward voltage (V_F) of UF4007 R1G is 1.7 V maximum at I_F = 1 A and T_J = 25°C, measured under pulsed conditions (PW = 0.3 ms). At elevated junction temperatures (e.g., 125°C), V_F decreases slightly due to negative temperature coefficient of silicon. This low V_F reduces conduction losses compared to standard recovery diodes like 1N4007, improving overall converter efficiency in high-duty-cycle applications.

Does UF4007 R1G have a specified reverse recovery time?

Yes, UF4007 R1G has a maximum reverse recovery time (t_rr) of 75 ns, measured at I_F = 0.5 A, I_R = 1.0 A, and I_rr = 0.25 A. This ultrafast recovery enables clean commutation in high-frequency switching circuits (≥100 kHz), minimizing switching loss and associated EMI. The t_rr value is guaranteed across the full operating temperature range and is verified per JEDEC JESD24-11 test methodology.

What package type and lead finish does UF4007 R1G use?

UF4007 R1G uses the DO-204AL (DO-41) axial-leaded package with glass-passivated chip junction. Its leads are pure tin plated and fully compliant with J-STD-002 for solderability. The package meets UL 94V-0 flammability rating, and the device polarity is marked by a cathode band. Weight is approximately 0.330 g, and it passes JESD201 Class 2 whisker testing for long-term interconnect reliability.