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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
6A10GHA0G DIODE GEN PURP 100V 6A R-6 Taiwan Semiconductor Corporation	6,202	RFQ	Datasheet	-	R-6, Axial	Tape & Box (TB)	Active	Standard	100 V	6A	1.1 V @ 6 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 100 V	60pF @ 4V, 1MHz	Automotive	AEC-Q101	Through Hole	R-6	-55°C ~ 150°C
6A40G A0G DIODE GEN PURP 400V 6A R-6 Taiwan Semiconductor Corporation	8,804	RFQ	Datasheet	-	R-6, Axial	Tape & Box (TB)	Active	Standard	400 V	6A	1 V @ 6 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 400 V	60pF @ 4V, 1MHz	-	-	Through Hole	R-6	-55°C ~ 150°C
6A40GHA0G DIODE GEN PURP 400V 6A R-6 Taiwan Semiconductor Corporation	7,417	RFQ	Datasheet	-	R-6, Axial	Tape & Box (TB)	Active	Standard	400 V	6A	1 V @ 6 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 400 V	60pF @ 4V, 1MHz	Automotive	AEC-Q101	Through Hole	R-6	-55°C ~ 150°C
6A60G A0G DIODE GEN PURP 600V 6A R-6 Taiwan Semiconductor Corporation	8,673	RFQ	Datasheet	-	R-6, Axial	Tape & Box (TB)	Active	Standard	600 V	6A	1 V @ 6 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 600 V	60pF @ 4V, 1MHz	-	-	Through Hole	R-6	-55°C ~ 150°C
6A80G A0G DIODE GEN PURP 800V 6A R-6 Taiwan Semiconductor Corporation	3,113	RFQ	Datasheet	-	R-6, Axial	Tape & Box (TB)	Active	Standard	800 V	6A	1 V @ 6 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 800 V	60pF @ 4V, 1MHz	-	-	Through Hole	R-6	-55°C ~ 150°C
6A80GHA0G DIODE GEN PURP 800V 6A R-6 Taiwan Semiconductor Corporation	3,548	RFQ	Datasheet	-	R-6, Axial	Tape & Box (TB)	Active	Standard	800 V	6A	1 V @ 6 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 800 V	60pF @ 4V, 1MHz	Automotive	AEC-Q101	Through Hole	R-6	-55°C ~ 150°C
FR152G A0G DIODE GEN PURP 100V 1.5A DO204AC Taiwan Semiconductor Corporation	6,403	RFQ	Datasheet	-	DO-204AC, DO-15, Axial	Tape & Box (TB)	Active	Standard	100 V	1.5A	1.3 V @ 1.5 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	5 µA @ 100 V	20pF @ 4V, 1MHz	-	-	Through Hole	DO-204AC (DO-15)	-55°C ~ 150°C
FR205G A0G DIODE GEN PURP 600V 2A DO204AC Taiwan Semiconductor Corporation	3,370	RFQ	Datasheet	-	DO-204AC, DO-15, Axial	Tape & Box (TB)	Active	Standard	600 V	2A	1.3 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	5 µA @ 600 V	10pF @ 4V, 1MHz	-	-	Through Hole	DO-204AC (DO-15)	-55°C ~ 150°C
FR207G A0G DIODE GEN PURP 2A DO204AC Taiwan Semiconductor Corporation	3,642	RFQ	Datasheet	-	DO-204AC, DO-15, Axial	Tape & Box (TB)	Active	Standard	1000 V	2A	1.3 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	5 µA @ 1000 V	10pF @ 4V, 1MHz	-	-	Through Hole	DO-204AC (DO-15)	-55°C ~ 150°C
HER153G A0G DIODE GEN PURP 200V 1.5A DO204AC Taiwan Semiconductor Corporation	6,100	RFQ	Datasheet	-	DO-204AC, DO-15, Axial	Tape & Box (TB)	Active	Standard	200 V	1.5A	1 V @ 1.5 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 200 V	35pF @ 4V, 1MHz	-	-	Through Hole	DO-204AC (DO-15)	-55°C ~ 150°C

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