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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
SF1004G DIODE GEN PURP 200V 10A TO220AB Taiwan Semiconductor Corporation	7,418	RFQ	Datasheet	-	TO-220-3	Tube	Discontinued at Digi-Key	Standard	200 V	10A	975 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 200 V	70pF @ 4V, 1MHz	-	-	Through Hole	TO-220AB	-55°C ~ 150°C
SF1004GHC0G DIODE GEN PURP 200V 10A TO220AB Taiwan Semiconductor Corporation	8,151	RFQ	Datasheet	-	TO-220-3	Tube	Active	Standard	200 V	10A	975 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 200 V	70pF @ 4V, 1MHz	Automotive	AEC-Q101	Through Hole	TO-220AB	-55°C ~ 150°C
SF1005GHC0G DIODE GEN PURP 300V 10A TO220AB Taiwan Semiconductor Corporation	8,502	RFQ	Datasheet	-	TO-220-3	Tube	Active	Standard	300 V	10A	1.3 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 300 V	50pF @ 4V, 1MHz	Automotive	AEC-Q101	Through Hole	TO-220AB	-55°C ~ 150°C
SF1007GHC0G DIODE GEN PURP 500V 10A TO220AB Taiwan Semiconductor Corporation	8,057	RFQ	Datasheet	-	TO-220-3	Tube	Discontinued at Digi-Key	Standard	500 V	10A	1.7 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 500 V	50pF @ 4V, 1MHz	Automotive	AEC-Q101	Through Hole	TO-220AB	-55°C ~ 150°C
SF1601G C0G DIODE GEN PURP 50V 16A TO220AB Taiwan Semiconductor Corporation	4,779	RFQ	Datasheet	-	TO-220-3	Tube	Active	Standard	50 V	16A	975 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 50 V	80pF @ 4V, 1MHz	-	-	Through Hole	TO-220AB	-55°C ~ 150°C
SF1603G C0G DIODE GEN PURP 150V 16A TO220AB Taiwan Semiconductor Corporation	5,725	RFQ	Datasheet	-	TO-220-3	Tube	Active	Standard	150 V	16A	975 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 150 V	80pF @ 4V, 1MHz	-	-	Through Hole	TO-220AB	-55°C ~ 150°C
SF1603PT C0G DIODE GEN PURP 150V 16A TO247AD Taiwan Semiconductor Corporation	4,287	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	150 V	16A	950 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 150 V	85pF @ 4V, 1MHz	-	-	Through Hole	TO-247AD (TO-3P)	-55°C ~ 150°C
SF1604PTHC0G DIODE GEN PURP 200V 16A TO247AD Taiwan Semiconductor Corporation	2,260	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	200 V	16A	950 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 200 V	85pF @ 4V, 1MHz	Automotive	AEC-Q101	Through Hole	TO-247AD (TO-3P)	-55°C ~ 150°C
SF1608GHC0G DIODE GEN PURP 600V 16A TO220AB Taiwan Semiconductor Corporation	4,440	RFQ	Datasheet	-	TO-220-3	Tube	Active	Standard	600 V	16A	1.7 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 600 V	60pF @ 4V, 1MHz	Automotive	AEC-Q101	Through Hole	TO-220AB	-55°C ~ 150°C
SF1608PT C0G DIODE GEN PURP 600V 16A TO247AD Taiwan Semiconductor Corporation	5,420	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	600 V	16A	1.7 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 600 V	85pF @ 4V, 1MHz	-	-	Through Hole	TO-247AD (TO-3P)	-55°C ~ 150°C

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