Taiwan Semiconductor Corporation SF1608GHC0G

Overview

SF1608GHC0G from Taiwan Semiconductor is a 16A, 600V super fast rectifier diode in TO-220AB package, designed for high-efficiency DC-DC and switching-mode power conversion. It delivers VF = 1.700 V at IF = 8 A and TJ = 25°C, trr = 35 ns, IR ≤ 10 µA at VR = 600 V and TJ = 25°C, and operates up to TJ = 150°C - enabling compact, high-frequency flyback and freewheeling stages in automotive-grade power supplies.

For engineers reviewing the SF1608GHC0G datasheet, SF1608GHC0G pinout, SF1608GHC0G application, or SF1608GHC0G equivalent, key selection criteria include its AEC-Q101 qualification, 600 V VRRM rating, dual-die TO-220AB construction, low reverse recovery time, and thermal resistance of 1.5 °C/W - all critical for reliable operation in under-hood DC-DC converters and industrial SMPS designs.

Technical Context

This device is a single-phase, dual-die super fast recovery rectifier optimized for high-frequency switching applications where low conduction loss and fast turn-off are essential. Its 35 ns reverse recovery time and 60 pF junction capacitance per diode support operation above 100 kHz without excessive switching loss or EMI generation.

The SF1608GHC0G integrates two identical 600 V/16 A rectifying elements in a common-cathode configuration within a TO-220AB thermally enhanced package. It meets JESD201 Class 2 whisker resistance and UL 94V-0 flammability requirements, with matte tin-plated leads compliant to J-STD-002 solderability standards.

Key Specifications

Pinout & Package

TO-220AB package with three terminals: Anode 1, Cathode (common), Anode 2 - configured as dual-anode, single-cathode (common-cathode) topology. Case is electrically connected to cathode. Mounting torque ≤ 0.56 N·m. Polarity marked on top surface per datasheet marking diagram.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar super fast rectifier applications.

Compared with STTH1606D and IXYS MUR1660CT, the SF1608GHC0G uniquely combines AEC-Q101 qualification, common-cathode dual-die TO-220AB packaging, and 1.700 V VF - making it the only option among the three qualified for automotive-grade 600 V rectification with integrated thermal and reliability validation.

Availability

SF1608GHC0G is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial switch-mode inverters, and high-frequency flyback power supplies requiring stable component supply, long-lifecycle assurance, and traceable AEC-Q101-compliant sourcing.

Supply support for SF1608GHC0G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in power rectifiers, TVS devices, and MOSFETs for industrial and automotive markets.

The SF160xG family was developed to deliver AEC-Q101-qualified super fast rectifiers with extended voltage range (50–600 V), low VF, and robust thermal performance for next-generation power conversion in electrified vehicles and high-reliability industrial systems.

FAQ

What is the maximum junction temperature rating for SF1608GHC0G?

The SF1608GHC0G has a maximum junction temperature (TJ) rating of +150°C, verified per absolute maximum ratings table in the official Taiwan Semiconductor datasheet Version I2104. This rating applies under continuous forward conduction and allows operation in under-hood automotive environments when mounted with appropriate thermal interface and heatsinking. Derating curves confirm usable current capacity down to 125°C case temperature.

Is SF1608GHC0G pin-compatible with other parts in the SF160xG series?

Yes, SF1608GHC0G uses the same TO-220AB package and common-cathode pinout as all SF1601G–SF1608G variants. Pin 1 is Anode 1, Pin 2 is Cathode (case-connected), and Pin 3 is Anode 2 - consistent across the family. Voltage rating differences (50–600 V) do not affect mechanical or electrical pin compatibility, enabling drop-in replacement within the same VRRM tier when thermal and surge margins permit.

Does SF1608GHC0G meet automotive qualification standards?

Yes, SF1608GHC0G is explicitly AEC-Q101 qualified, as indicated by the "H" suffix in its ordering code and confirmed in the FEATURES section of the Taiwan Semiconductor datasheet. This qualification covers stress tests including temperature cycling, high-temperature operating life, and unbiased highly accelerated stress testing - validating suitability for automotive powertrain and body electronics applications.

What is the typical forward voltage of SF1608GHC0G at rated current?

The typical forward voltage (VF) of SF1608GHC0G is 1.700 V at IF = 8 A and TJ = 25°C, per the ELECTRICAL SPECIFICATIONS table in the official datasheet. At full rated current (IF = 16 A), VF increases to approximately 1.85–1.95 V depending on junction temperature - a value confirmed by the Typical Forward Characteristics curve (Fig.4) showing 1.9 V at 16 A and 25°C.

How does the junction-to-case thermal resistance of SF1608GHC0G impact heatsink design?

SF1608GHC0G has a typical junction-to-case thermal resistance (RθJC) of 1.5 °C/W, meaning each watt of dissipated power raises the junction temperature 1.5°C above the case temperature. For a 16 A load with VF ≈ 1.85 V, power dissipation is ~29.6 W - requiring a heatsink that maintains case temperature ≤ 85°C to keep TJ ≤ 150°C. This RθJC value enables use of compact extruded aluminum heatsinks without forced airflow in most industrial and automotive applications.