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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
6A10G B0G DIODE GEN PURP 100V 6A R-6 Taiwan Semiconductor Corporation	2,069	RFQ	Datasheet	-	R-6, Axial	Bulk	Discontinued at Digi-Key	Standard	100 V	6A	1.1 V @ 6 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 100 V	60pF @ 4V, 1MHz	-	-	Through Hole	R-6	-55°C ~ 150°C
6A10GHB0G DIODE GEN PURP 100V 6A R-6 Taiwan Semiconductor Corporation	5,123	RFQ	Datasheet	-	R-6, Axial	Bulk	Active	Standard	100 V	6A	1.1 V @ 6 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 100 V	60pF @ 4V, 1MHz	Automotive	AEC-Q101	Through Hole	R-6	-55°C ~ 150°C
6A20G B0G DIODE GEN PURP 200V 6A R-6 Taiwan Semiconductor Corporation	9,408	RFQ	Datasheet	-	R-6, Axial	Bulk	Discontinued at Digi-Key	Standard	200 V	6A	1 V @ 6 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 200 V	60pF @ 4V, 1MHz	-	-	Through Hole	R-6	-55°C ~ 150°C
6A40GHB0G DIODE GEN PURP 400V 6A R-6 Taiwan Semiconductor Corporation	5,672	RFQ	Datasheet	-	R-6, Axial	Bulk	Discontinued at Digi-Key	Standard	400 V	6A	1 V @ 6 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 400 V	60pF @ 4V, 1MHz	Automotive	AEC-Q101	Through Hole	R-6	-55°C ~ 150°C
6A60G B0G DIODE GEN PURP 600V 6A R-6 Taiwan Semiconductor Corporation	6,135	RFQ	Datasheet	-	R-6, Axial	Bulk	Discontinued at Digi-Key	Standard	600 V	6A	1 V @ 6 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 600 V	60pF @ 4V, 1MHz	-	-	Through Hole	R-6	-55°C ~ 150°C
6A60GHB0G DIODE GEN PURP 600V 6A R-6 Taiwan Semiconductor Corporation	3,662	RFQ	Datasheet	-	R-6, Axial	Bulk	Discontinued at Digi-Key	Standard	600 V	6A	1 V @ 6 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 600 V	60pF @ 4V, 1MHz	Automotive	AEC-Q101	Through Hole	R-6	-55°C ~ 150°C
6A80G B0G DIODE GEN PURP 800V 6A R-6 Taiwan Semiconductor Corporation	5,905	RFQ	Datasheet	-	R-6, Axial	Bulk	Active	Standard	800 V	6A	1 V @ 6 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 800 V	60pF @ 4V, 1MHz	-	-	Through Hole	R-6	-55°C ~ 150°C
6A80GHB0G DIODE GEN PURP 800V 6A R-6 Taiwan Semiconductor Corporation	8,538	RFQ	Datasheet	-	R-6, Axial	Bulk	Active	Standard	800 V	6A	1 V @ 6 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 800 V	60pF @ 4V, 1MHz	Automotive	AEC-Q101	Through Hole	R-6	-55°C ~ 150°C
BA157G B0G DIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation	6,978	RFQ	Datasheet	-	DO-204AL, DO-41, Axial	Bulk	Discontinued at Digi-Key	Standard	400 V	1A	1.2 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	5 µA @ 400 V	15pF @ 4V, 1MHz	-	-	Through Hole	DO-204AL (DO-41)	-55°C ~ 150°C
BA157GHB0G DIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation	7,275	RFQ	Datasheet	-	DO-204AL, DO-41, Axial	Bulk	Discontinued at Digi-Key	Standard	400 V	1A	1.2 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	5 µA @ 400 V	15pF @ 4V, 1MHz	Automotive	AEC-Q101	Through Hole	DO-204AL (DO-41)	-55°C ~ 150°C

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