Single Diodes
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N4005G B0GDIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation |
7,414 | 0.00 |
|
Datasheet |
- | DO-204AL, DO-41, Axial | Bulk | Discontinued at Digi-Key | Standard | 600 V | 1A | 1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 600 V | 10pF @ 4V, 1MHz | - | - | Through Hole | DO-204AL (DO-41) | -55°C ~ 150°C |
|
1N4006G B0GDIODE GEN PURP 800V 1A DO204AL Taiwan Semiconductor Corporation |
2,193 | 0.00 |
|
Datasheet |
- | DO-204AL, DO-41, Axial | Bulk | Active | Standard | 800 V | 1A | 1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 800 V | 10pF @ 4V, 1MHz | - | - | Through Hole | DO-204AL (DO-41) | -55°C ~ 150°C |
|
1N4006GHB0GDIODE GEN PURP 800V 1A DO204AL Taiwan Semiconductor Corporation |
2,723 | 0.00 |
|
Datasheet |
- | DO-204AL, DO-41, Axial | Bulk | Active | Standard | 800 V | 1A | 1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 800 V | 10pF @ 4V, 1MHz | Automotive | AEC-Q101 | Through Hole | DO-204AL (DO-41) | -55°C ~ 150°C |
|
1N4007G B0GDIODE GEN PURP 1KV 1A DO204AL Taiwan Semiconductor Corporation |
5,035 | 0.00 |
|
Datasheet |
- | DO-204AL, DO-41, Axial | Bulk | Active | Standard | 1000 V | 1A | 1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 1000 V | 10pF @ 4V, 1MHz | - | - | Through Hole | DO-204AL (DO-41) | -55°C ~ 150°C |
|
1N4007GHB0GDIODE GEN PURP 1KV 1A DO204AL Taiwan Semiconductor Corporation |
7,006 | 0.00 |
|
Datasheet |
- | DO-204AL, DO-41, Axial | Bulk | Discontinued at Digi-Key | Standard | 1000 V | 1A | 1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 1000 V | 10pF @ 4V, 1MHz | Automotive | AEC-Q101 | Through Hole | DO-204AL (DO-41) | -55°C ~ 150°C |
|
1N4934G B0GDIODE GEN PURP 100V 1A DO204AL Taiwan Semiconductor Corporation |
9,926 | 0.00 |
|
Datasheet |
- | DO-204AL, DO-41, Axial | Bulk | Active | Standard | 100 V | 1A | 1.2 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 5 µA @ 100 V | 10pF @ 4V, 1MHz | - | - | Through Hole | DO-204AL (DO-41) | -55°C ~ 150°C |
|
1N4936GHB0GDIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation |
2,612 | 0.00 |
|
Datasheet |
- | DO-204AL, DO-41, Axial | Bulk | Active | Standard | 400 V | 1A | 1.2 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 5 µA @ 400 V | 10pF @ 4V, 1MHz | Automotive | AEC-Q101 | Through Hole | DO-204AL (DO-41) | -55°C ~ 150°C |
|
1N4937G B0GDIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation |
5,281 | 0.00 |
|
Datasheet |
- | DO-204AL, DO-41, Axial | Bulk | Active | Standard | 600 V | 1A | 1.2 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 5 µA @ 600 V | 10pF @ 4V, 1MHz | - | - | Through Hole | DO-204AL (DO-41) | -55°C ~ 150°C |
|
1N5397G B0GDIODE GEN PURP 600V 1.5A DO204AC Taiwan Semiconductor Corporation |
8,571 | 0.00 |
|
Datasheet |
- | DO-204AC, DO-15, Axial | Bulk | Active | Standard | 600 V | 1.5A | 1 V @ 1.5 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 600 V | 15pF @ 4V, 1MHz | - | - | Through Hole | DO-204AC (DO-15) | -55°C ~ 150°C |
|
1N5398GHB0GDIODE GEN PURP 800V 1.5A DO204AC Taiwan Semiconductor Corporation |
9,011 | 0.00 |
|
Datasheet |
- | DO-204AC, DO-15, Axial | Bulk | Active | Standard | 800 V | 1.5A | 1 V @ 1.5 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 800 V | 15pF @ 4V, 1MHz | Automotive | AEC-Q101 | Through Hole | DO-204AC (DO-15) | -55°C ~ 150°C |
