Taiwan Semiconductor Corporation 1N4006G B0G

Overview

1N4006G from Taiwan Semiconductor is a glass-passivated silicon standard rectifier diode rated for 1 A average forward current and 800 V repetitive peak reverse voltage, with 30 A surge capability and 1 V max forward voltage at 1 A - used in DC-DC converters, switching inverters, and general-purpose AC/DC front-end rectification.

For engineers reviewing the 1N4006G datasheet, 1N4006G pinout, 1N4006G application, or 1N4006G equivalent, key selection criteria include V_RRM = 800 V, I_F = 1 A, I_FSM = 30 A, T_J = –55°C to +150°C, and DO-204AL (DO-41) package compatibility with through-hole PCB assembly.

Technical Context

This single-die, unidirectional PN-junction rectifier operates with low forward conduction loss and high reliability under repetitive surge conditions. Its glass-passivated junction ensures stable reverse leakage (<5 µA at 25°C, <100 µA at 125°C) and robust thermal performance (R_θJA = 80°C/W).

The device supports standard line-frequency and high-frequency switching applications up to 1 MHz due to its 10 pF junction capacitance and fast recovery characteristics inherent to standard rectifier construction - not optimized for ultra-fast or soft-recovery operation.

Key Specifications

Pinout & Package

Package: DO-204AL (DO-41), axial-leaded, glass-passivated, RoHS-compliant, halogen-free molding compound (UL 94V-0), pure tin-plated leads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar standard rectifier applications.

Compared with 1N4006 and STTH1R06, the 1N4006G delivers superior long-term leakage stability in harsh environments while retaining full DO-41 compatibility and cost efficiency - making it optimal for general-purpose, line-frequency, and medium-frequency rectification where ruggedness and manufacturability outweigh ultrafast switching needs.

Availability

1N4006G is available at Aetrix Electronics and suitable for AC/DC power supply rectification, DC-DC converter input stages, and general-purpose industrial rectification requiring stable component supply across production lifecycles.

Supply support for 1N4006G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving industrial, computing, and consumer markets since 1979.

The 1N400xG series targets cost-sensitive, high-volume rectification applications demanding reliability, regulatory compliance (RoHS/halogen-free), and broad voltage coverage - from 50 V to 1000 V - in standardized DO-41 packaging.

FAQ

What is the maximum repetitive peak reverse voltage (V_RRM) for the 1N4006G?

The 1N4006G has a V_RRM of 800 V, meaning it reliably blocks up to 800 V of reverse voltage in repetitive AC or pulsed conditions. This rating is defined per JEDEC standards and verified under specified test conditions - it is not a breakdown threshold but a guaranteed minimum blocking voltage before significant leakage or failure occurs. Always maintain derating margins in safety-critical designs.

Does the 1N4006G have AEC-Q101 qualification?

The base 1N4006G is not AEC-Q101 qualified; however, the variant 1N4006GH (with "H" suffix) is explicitly qualified per AEC-Q101 for automotive applications. The "G" denotes green/halogen-free packaging and glass passivation, but qualification status is encoded separately in the ordering code. Confirm part marking or datasheet revision P2104 Appendix for AEC-Q101 certification details.

What is the forward voltage drop (V_F) of the 1N4006G at rated current?

The 1N4006G exhibits a maximum forward voltage of 1.0 V at 1 A forward current and 25°C junction temperature, per the manufacturer's electrical specifications. This value is measured under pulsed conditions (PW = 0.3 ms) to minimize self-heating. At higher temperatures or continuous DC, V_F decreases slightly due to negative temperature coefficient, but power dissipation must still be calculated using worst-case 1.0 V for thermal design.

Can the 1N4006G replace the 1N4007G in a 1000 V design?

No - the 1N4006G is rated for 800 V V_RRM, while the 1N4007G is rated for 1000 V. Substituting 1N4006G in a circuit designed for 1000 V reverse stress risks premature breakdown, especially under voltage transients or elevated temperature. The two share identical package, pinout, and thermal specs, but V_RRM is not interchangeable; always match or exceed the required blocking voltage with the correct 1N400xG variant.

What does the "G" suffix mean in 1N4006G?

The "G" suffix in 1N4006G indicates two key features: (1) glass passivation of the silicon junction for improved moisture resistance and long-term reliability, and (2) green/halogen-free molding compound compliant with IEC 61249-2-21 and RoHS directives. It does not denote AEC-Q101 qualification (that requires "H") or packaging type - the DO-204AL (DO-41) package is standard across all 1N4001G–1N4007G variants.