Single Diodes
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SR506 B0GDIODE SCHOTTKY 60V 5A DO201AD Taiwan Semiconductor Corporation |
6,156 | 0.00 |
|
Datasheet |
- | DO-201AD, Axial | Bulk | Active | Schottky | 60 V | 5A | 700 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 60 V | - | - | - | Through Hole | DO-201AD | -55°C ~ 150°C |
|
SR510 B0GDIODE SCHOTTKY 100V 5A DO201AD Taiwan Semiconductor Corporation |
9,080 | 0.00 |
|
Datasheet |
- | DO-201AD, Axial | Bulk | Active | Schottky | 100 V | 5A | 850 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 100 V | - | - | - | Through Hole | DO-201AD | -55°C ~ 150°C |
|
SR520HB0GDIODE SCHOTTKY 200V 5A DO201AD Taiwan Semiconductor Corporation |
8,933 | 0.00 |
|
Datasheet |
- | DO-201AD, Axial | Bulk | Active | Schottky | 200 V | 5A | 1.05 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 200 V | - | Automotive | AEC-Q101 | Through Hole | DO-201AD | -55°C ~ 150°C |
|
SR804 B0GDIODE SCHOTTKY 40V 8A DO201AD Taiwan Semiconductor Corporation |
7,423 | 0.00 |
|
Datasheet |
- | DO-201AD, Axial | Bulk | Discontinued at Digi-Key | Schottky | 40 V | 8A | 550 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 40 V | - | - | - | Through Hole | DO-201AD | -55°C ~ 125°C |
|
UF1D B0GDIODE GEN PURP 200V 1A DO204AL Taiwan Semiconductor Corporation |
8,319 | 0.00 |
|
Datasheet |
- | DO-204AL, DO-41, Axial | Bulk | Active | Standard | 200 V | 1A | 1 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 200 V | 17pF @ 4V, 1MHz | - | - | Through Hole | DO-204AL (DO-41) | -55°C ~ 150°C |
|
UF1J B0GDIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation |
9,327 | 0.00 |
|
Datasheet |
- | DO-204AL, DO-41, Axial | Bulk | Active | Standard | 600 V | 1A | 1.7 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 5 µA @ 600 V | 17pF @ 4V, 1MHz | - | - | Through Hole | DO-204AL (DO-41) | -55°C ~ 150°C |
|
UF4005 B0GDIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation |
3,676 | 0.00 |
|
Datasheet |
- | DO-204AL, DO-41, Axial | Bulk | Active | Standard | 600 V | 1A | 1.7 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 5 µA @ 600 V | 17pF @ 4V, 1MHz | - | - | Through Hole | DO-204AL (DO-41) | -55°C ~ 150°C |
|
UF4007 B0GDIODE GEN PURP 1A DO204AL Taiwan Semiconductor Corporation |
4,400 | 0.00 |
|
Datasheet |
- | DO-204AL, DO-41, Axial | Bulk | Active | Standard | 1000 V | 1A | 1.7 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 5 µA @ 1000 V | 17pF @ 4V, 1MHz | - | - | Through Hole | DO-204AL (DO-41) | -55°C ~ 150°C |
|
UG2D B0GDIODE GEN PURP 200V 2A DO204AC Taiwan Semiconductor Corporation |
8,971 | 0.00 |
|
- |
- | DO-204AC, DO-15, Axial | Bulk | Active | Standard | 200 V | 2A | 950 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 5 µA @ 200 V | 35pF @ 4V, 1MHz | - | - | Through Hole | DO-204AC (DO-15) | -55°C ~ 150°C |
|
UG54GHB0GDIODE GEN PURP 200V 5A DO201AD Taiwan Semiconductor Corporation |
5,659 | 0.00 |
|
Datasheet |
- | DO-201AD, Axial | Bulk | Active | Standard | 200 V | 5A | 1.05 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 20 ns | 10 µA @ 200 V | - | Automotive | AEC-Q101 | Through Hole | DO-201AD | -55°C ~ 175°C |
