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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
NXPSC10650X6Q DIODE SIL CARB 650V 10A TO220F WeEn Semiconductors	2,995	RFQ	Datasheet	-	TO-220-2 Full Pack, Isolated Tab	Bulk	Obsolete	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	250 µA @ 650 V	300pF @ 1V, 1MHz	-	-	Through Hole	TO-220F	175°C (Max)
NXPSC10650B6J DIODE SIL CARBIDE 650V 10A D2PAK WeEn Semiconductors	2,290	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	250 µA @ 650 V	300pF @ 1V, 1MHz	-	-	Surface Mount	D2PAK	175°C (Max)
NXPSC126506Q DIODE SIL CARB 650V 12A TO220AC WeEn Semiconductors	990	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	12A	1.7 V @ 12 A	No Recovery Time > 500mA (Io)	80 µA @ 650 V	380pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	175°C (Max)
WNSC6D20650B6J DIODE SIL CARBIDE 650V 20A D2PAK WeEn Semiconductors	4,518	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.55 V @ 20 A	No Recovery Time > 500mA (Io)	80 µA @ 650 V	780pF @ 1V, 1MHz	-	-	Surface Mount	D2PAK	175°C
NXPSC10650Q DIODE SIL CARB 650V 10A TO220AC WeEn Semiconductors	1,916	RFQ	Datasheet	-	TO-220-2	Tube	Discontinued at Digi-Key	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	250 µA @ 650 V	300pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	175°C (Max)
WNSC2D151200WQ DIODE SIL CARB 1.2KV 15A TO247-2 WeEn Semiconductors	4,589	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	15A	1.7 V @ 15 A	No Recovery Time > 500mA (Io)	150 µA @ 1200 V	700pF @ 1V, 1MHz	-	-	Through Hole	TO-247-2	175°C
NXPSC166506Q DIODE SIL CARB 650V 16A TO220AC WeEn Semiconductors	3,003	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	16A	1.7 V @ 16 A	No Recovery Time > 500mA (Io)	100 µA @ 650 V	534pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	175°C (Max)
NXPSC10650D6J DIODE SIL CARBIDE 650V 10A DPAK WeEn Semiconductors	7,204	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	250 µA @ 650 V	300pF @ 1V, 1MHz	-	-	Surface Mount	DPAK	175°C (Max)
NXPSC206506Q DIODE SIL CARB 650V 20A TO220AC WeEn Semiconductors	3,041	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	20A	1.7 V @ 20 A	No Recovery Time > 500mA (Io)	500 µA @ 650 V	600pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	175°C (Max)
WNSC2D30650WQ SILICON CARBIDE SCHOTTKY DI WeEn Semiconductors	275	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	30A	1.7 V @ 30 A	No Recovery Time > 500mA (Io)	100 µA @ 650 V	980pF @ 1V, 1MHz	-	-	Through Hole	TO-247-2	175°C

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