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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
WNSC04650T6J DIODE SIL CARBIDE 650V 4A 5DFN WeEn Semiconductors	4,442	RFQ	Datasheet	-	4-VSFN Exposed Pad	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	4A	1.7 V @ 4 A	No Recovery Time > 500mA (Io)	25 µA @ 650 V	141pF @ 1V, 1MHz	-	-	Surface Mount	5-DFN (8x8)	175°C (Max)
NXPSC12650B6J DIODE SIL CARBIDE 650V 12A D2PAK WeEn Semiconductors	2,892	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	12A	1.7 V @ 12 A	No Recovery Time > 500mA (Io)	80 µA @ 650 V	380pF @ 1V, 1MHz	-	-	Surface Mount	D2PAK	175°C (Max)
WNSC10650T6J DIODE SIL CARBIDE 650V 10A 5DFN WeEn Semiconductors	7,135	RFQ	Datasheet	-	4-VSFN Exposed Pad	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	60 µA @ 650 V	328pF @ 1V, 1MHz	-	-	Surface Mount	5-DFN (8x8)	175°C (Max)
WNSC08650T6J DIODE SIL CARBIDE 650V 8A 5DFN WeEn Semiconductors	8,999	RFQ	Datasheet	-	4-VSFN Exposed Pad	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	8A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	50 µA @ 650 V	267pF @ 1V, 1MHz	-	-	Surface Mount	5-DFN (8x8)	175°C (Max)
WNSC12650WQ DIODE SIL CARB 650V 12A TO247-2 WeEn Semiconductors	7,068	RFQ	Datasheet	-	TO-247-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	12A	1.7 V @ 12 A	No Recovery Time > 500mA (Io)	60 µA @ 650 V	328pF @ 1V, 1MHz	-	-	Through Hole	TO-247-2	175°C
WNSC10650WQ DIODE SIL CARB 650V 10A TO247-2 WeEn Semiconductors	3,149	RFQ	Datasheet	-	TO-247-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	60 µA @ 650 V	328pF @ 1V, 1MHz	-	-	Through Hole	TO-247-2	175°C
WNSC208006Q DIODE SCHOTTKY TO220-2L WeEn Semiconductors	9,502	RFQ	-	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	800 V	20A	1.7 V @ 20 A	No Recovery Time > 500mA (Io)	450 µA @ 800 V	655pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	175°C
WNSC5D04650D6J DIODE SIL CARBIDE 650V 4A DPAK WeEn Semiconductors	6,611	RFQ	-	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	4A	1.7 V @ 4 A	No Recovery Time > 500mA (Io)	20 µA @ 650 V	138pF @ 1V, 1MHz	-	-	Surface Mount	DPAK	-55°C ~ 175°C

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