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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
BYC30W-600PT2-AQ BYC30W-600PT2-A/TO247-2L/STANDAR WeEn Semiconductors	4,460	RFQ	-	-	TO-247-2	Tube	Active	Standard	600 V	30A	2.75 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	54 ns	10 µA @ 600 V	-	-	-	Through Hole	TO-247-2	175°C
BYC8B-600PJ DIODE GEN PURP 600V 8A D2PAK WeEn Semiconductors	3,091	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	600 V	8A	3.4 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	18 ns	20 µA @ 600 V	-	-	-	Surface Mount	D2PAK	175°C (Max)
WB75FC120ALZ WB75FC120AL/NAU000/NO MARK*CHIPS WeEn Semiconductors	4,936	RFQ	-	-	Die	Bulk	Active	Standard	1200 V	75A	3.3 V @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	85 ns	250 µA @ 1200 V	-	-	-	Surface Mount	Wafer	175°C
WNSC2D101200D6J WNSC2D101200D/TO252/REEL 13" Q1 WeEn Semiconductors	2,159	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.6 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 1200 V	481pF @ 1V, 1MHz	-	-	Surface Mount	DPAK	-55°C ~ 175°C
BYW29ED-200,118 DIODE GEN PURP 200V 8A DPAK WeEn Semiconductors	2,689	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	Standard	200 V	8A	1.3 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	10 µA @ 200 V	-	-	-	Surface Mount	DPAK	150°C (Max)
WNSC6D10650T6J WNSC6D10650T/DFN8X8/REEL 13" Q1/ WeEn Semiconductors	2,712	RFQ	Datasheet	-	4-VSFN Exposed Pad	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.45 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	500pF @ 1V, 1MHz	-	-	Surface Mount	5-DFN (8x8)	-55°C ~ 175°C
WNSC6D08650Q DIODE SIL CARB 650V 8A TO220AC WeEn Semiconductors	9,986	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.4 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	402pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	175°C
WNSC2D1012006Q DIODE SIL CARB 1.2KV 10A TO220AC WeEn Semiconductors	7,186	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.6 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 1200 V	481pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
BYC40W-1200PQ BYC40W-1200P/TO247-2L/STANDARD M WeEn Semiconductors	3,619	RFQ	Datasheet	-	TO-247-2	Bulk	Active	Standard	1200 V	40A	3.3 V @ 40 A	Fast Recovery =< 500ns, > 200mA (Io)	91 ns	250 µA @ 1200 V	-	-	-	Through Hole	TO-247-2	175°C
WNSC2D101200W6Q DIODE SIL CARB 1.2KV 10A TO247-2 WeEn Semiconductors	9,408	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.65 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	110 µA @ 1200 V	490pF @ 1V, 1MHz	-	-	Through Hole	TO-247-2	175°C

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