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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
BYC20D-600PQ DIODE GEN PURP 600V 20A TO220AC WeEn Semiconductors	5,761	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	600 V	20A	2.9 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	20 ns	10 µA @ 600 V	-	-	-	Through Hole	TO-220AC	175°C (Max)
WNB199V5APTSV WNB199V5APTS/NAU000/NO MARK*CHIP WeEn Semiconductors	2,990	RFQ	-	-	Die	Bulk	Active	Standard	600 V	60A	2 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	10 µA @ 600 V	-	-	-	Surface Mount	Wafer	175°C
WNSC6D04650Q DIODE SIL CARB 650V 4A TO220AC WeEn Semiconductors	9,581	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	4A	1.4 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 650 V	233pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	175°C
WNSC2D0512006Q DIODE SIL CARB 1.2KV 5A TO220AC WeEn Semiconductors	5,992	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	5A	1.6 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	25 µA @ 1200 V	260pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
WNSC2D06650XQ DIODE SIL CARBIDE 650V 6A TO220F WeEn Semiconductors	7,880	RFQ	Datasheet	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 650 V	198pF @ 1V, 1MHz	-	-	Through Hole	TO-220F	175°C
WNSC2D06650Q DIODE SIL CARB 650V 6A TO220AC WeEn Semiconductors	7,376	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 650 V	198pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	175°C
BYV30-600PQ DIODE GEN PURP 600V 30A TO220AC WeEn Semiconductors	6,376	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	600 V	30A	1.55 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	10 µA @ 600 V	-	-	-	Through Hole	TO-220AC	175°C (Max)
BYV30X-600PQ DIODE GEN PURP 600V 30A TO220FP WeEn Semiconductors	9,906	RFQ	Datasheet	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	Standard	600 V	30A	1.55 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	10 µA @ 600 V	-	-	-	Through Hole	TO-220FP	175°C (Max)
BYC30B-600PJ DIODE GEN PURP 600V 30A D2PAK WeEn Semiconductors	7,679	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	600 V	30A	2.75 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 600 V	-	-	-	Surface Mount	D2PAK	175°C (Max)
BYV30W-600PT2Q BYV30W-600PT2/TO247-2L/STANDARD WeEn Semiconductors	4,238	RFQ	Datasheet	-	TO-247-2	Bulk	Active	Standard	600 V	30A	1.55 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	10 µA @ 600 V	-	-	-	Through Hole	TO-247-2	175°C

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