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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
WB60FV60ALZ WB60FV60AL/NAU000/NO MARK*CHIPS WeEn Semiconductors	8,297	RFQ	Datasheet	-	Die	Bulk	Active	Standard	600 V	60A	2 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	10 µA @ 600 V	-	-	-	Surface Mount	Wafer	-40°C ~ 175°C
WB75FC65ALZ WB75FC65AL/NAU000/NO MARK*CHIPS WeEn Semiconductors	3,597	RFQ	-	-	Die	Bulk	Active	Standard	650 V	75A	2.75 V @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 650 V	-	-	-	Surface Mount	Wafer	175°C
WBSF30FC120ALV WBSF30FC120AL/NAU000/NO MARK*CHI WeEn Semiconductors	7,519	RFQ	Datasheet	-	Die	Bulk	Active	Standard	1200 V	30A	3.5 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	65 ns	250 µA @ 1200 V	-	-	-	Surface Mount	Wafer	175°C
WB30FC120ALZ WB30FC120AL/NAU000/NO MARK*CHIPS WeEn Semiconductors	8,806	RFQ	-	-	Die	Bulk	Active	Standard	1200 V	30A	3.5 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	65 ns	250 µA @ 1200 V	-	-	-	Surface Mount	Wafer	175°C
BYC30Y-600PQ BYC30Y-600P/IITO220-2L/STANDARD WeEn Semiconductors	3,247	RFQ	Datasheet	-	TO-220-2	Bulk	Active	Standard	600 V	30A	2.75 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 600 V	-	-	-	Through Hole	IITO-220-2L	175°C
BYC30DW-600PQ DIODE GEN PURP 600V 30A TO247-2 WeEn Semiconductors	2,954	RFQ	Datasheet	-	TO-247-2	Bulk	Active	Standard	600 V	30A	3.3 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	33 ns	10 µA @ 600 V	-	-	-	Through Hole	TO-247-2	175°C (Max)
BYC30MW-650PT2Q BYC30MW-650PT2/TO247-2L/STANDARD WeEn Semiconductors	2,749	RFQ	-	-	TO-247-2	Tube	Active	Standard	650 V	30A	2.75 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	38 ns	30 µA @ 650 V	-	-	-	Through Hole	TO-247-2	-65°C ~ 175°C
BYC30-1200PQ DIODE GEN PURP 1.2KV 30A TO220AC WeEn Semiconductors	9,597	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	1200 V	30A	3.3 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	65 ns	250 µA @ 1200 V	-	-	-	Through Hole	TO-220AC	175°C (Max)
BYC8X-600P,127 DIODE GEN PURP 600V 8A TO220FP WeEn Semiconductors	5,038	RFQ	Datasheet	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	Standard	600 V	8A	1.9 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	18 ns	20 µA @ 600 V	-	-	-	Through Hole	TO-220FP	175°C (Max)
BYV30W-600PQ DIODE GEN PURP 600V 30A TO247-2 WeEn Semiconductors	6,523	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	600 V	30A	1.55 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	10 µA @ 600 V	-	-	-	Through Hole	TO-247-2	175°C (Max)

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