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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
BYV60W-600PSQ BYV60W-600PS/SOD142/STANDARD MAR WeEn Semiconductors	9,884	RFQ	Datasheet	-	TO-247-2	Bulk	Active	Standard	600 V	60A	2 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	10 µA @ 600 V	-	-	-	Through Hole	TO-247-2	175°C
WNC3060D45160WQ WNC3060D45160W/TO247/STANDARD MA WeEn Semiconductors	6,386	RFQ	-	-	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
WNSC2D151200W6Q WNSC2D151200W/TO247-2L/STANDARD WeEn Semiconductors	2,929	RFQ	Datasheet	-	TO-247-2	Bulk	Active	SiC (Silicon Carbide) Schottky	1200 V	15A	1.7 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	150 µA @ 1200 V	700pF @ 1V, 1MHz	-	-	Through Hole	TO-247-2	175°C
WB100FC120ALZ WB100FC120AL/NAU000/NO MARK*CHIP WeEn Semiconductors	4,923	RFQ	-	-	Die	Bulk	Active	Standard	1200 V	100A	3.3 V @ 100 A	Fast Recovery =< 500ns, > 200mA (Io)	90 ns	250 µA @ 1200 V	-	-	-	Surface Mount	Wafer	175°C
BYC60W-1200PQ BYC60W-1200P/TO247-2L/STANDARD M WeEn Semiconductors	4,320	RFQ	Datasheet	-	TO-247-2	Bulk	Active	Standard	1200 V	60A	3.3 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	96 ns	250 µA @ 1200 V	-	-	-	Through Hole	TO-247-2	175°C
NXPSC04650D6J DIODE SIL CARBIDE 650V 4A DPAK WeEn Semiconductors	6,462	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	4A	1.7 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	170 µA @ 650 V	130pF @ 1V, 1MHz	-	-	Surface Mount	DPAK	175°C (Max)
WNSC2D2012006Q WNSC2D201200/SOD59A/STANDARD MAR WeEn Semiconductors	4,999	RFQ	Datasheet	-	TO-220-2	Bulk	Active	SiC (Silicon Carbide) Schottky	1200 V	20A	1.65 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 1200 V	950pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
WNSC2D08650TJ DIODE SIL CARBIDE 650V 8A 5DFN WeEn Semiconductors	8,039	RFQ	Datasheet	-	4-VSFN Exposed Pad	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	260pF @ 1V, 1MHz	-	-	Surface Mount	5-DFN (8x8)	175°C
BYC75W-1200PQ DIODE GEN PURP 1.2KV 75A TO247-2 WeEn Semiconductors	9,568	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	75A	-	Fast Recovery =< 500ns, > 200mA (Io)	85 ns	250 µA @ 1200 V	-	-	-	Through Hole	TO-247-2	175°C (Max)
WNSC2D201200W6Q DIODE SIL CARB 1.2KV 20A TO247-2 WeEn Semiconductors	2,379	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	20A	1.8 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	845pF @ 1V, 1MHz	-	-	Through Hole	TO-247-2	175°C

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