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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
WNSC06650T6J DIODE SIL CARBIDE 650V 6A 5DFN WeEn Semiconductors	2	RFQ	Datasheet	-	4-VSFN Exposed Pad	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	6A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	190pF @ 1V, 1MHz	-	-	Surface Mount	5-DFN (8x8)	175°C (Max)
BYC100W-1200PQ DIODE GP 1.2KV 100A TO247-2 WeEn Semiconductors	6,606	RFQ	Datasheet	EEPP™	TO-247-2	Tube	Active	Standard	1200 V	100A	3.3 V @ 100 A	Fast Recovery =< 500ns, > 200mA (Io)	90 ns	250 µA @ 1200 V	-	-	-	Through Hole	TO-247-2	175°C (Max)
WNSC2D301200W6Q WNSC2D301200W/TO247-2L/STANDARD WeEn Semiconductors	9,578	RFQ	Datasheet	-	TO-247-2	Bulk	Active	SiC (Silicon Carbide) Schottky	1200 V	30A	1.6 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	150 µA @ 1200 V	1407pF @ 1V, 1MHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
WNSC2D401200W6Q WNSC2D401200W/TO247-2L/STANDARD WeEn Semiconductors	9,449	RFQ	Datasheet	-	TO-247-2	Bulk	Active	SiC (Silicon Carbide) Schottky	1200 V	40A	1.6 V @ 40 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	2068pF @ 1V, 1MHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
WBST080SCM120CGALW WBST080SCM120CGAL/NAU000/NO MARK WeEn Semiconductors	4,318	RFQ	-	-	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
NXPLQSC10650Q DIODE SIL CARB 650V 10A TO220AC WeEn Semiconductors	8,476	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	10A	1.85 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	230 µA @ 650 V	250pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	175°C (Max)
NXPSC04650Q DIODE SIL CARB 650V 4A TO220AC WeEn Semiconductors	5,389	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	4A	1.7 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	170 µA @ 650 V	130pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	175°C (Max)
NXPSC06650Q DIODE SIL CARB 650V 6A TO220AC WeEn Semiconductors	7,517	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	6A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	190pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	175°C (Max)
NXPSC08650Q DIODE SIL CARB 650V 8A TO220AC WeEn Semiconductors	3,421	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	8A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	230 µA @ 650 V	260pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	175°C (Max)
NXPSC04650DJ DIODE SIL CARBIDE 650V 4A DPAK WeEn Semiconductors	4,190	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	4A	1.7 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	170 µA @ 650 V	130pF @ 1V, 1MHz	-	-	Surface Mount	DPAK	175°C (Max)

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