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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
NXPSC08650BJ DIODE SIL CARBIDE 650V 8A D2PAK WeEn Semiconductors	3,736	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	8A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	230 µA @ 650 V	260pF @ 1V, 1MHz	-	-	Surface Mount	D2PAK	175°C (Max)
NXPSC08650DJ DIODE SIL CARBIDE 650V 8A DPAK WeEn Semiconductors	4,110	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	8A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	230 µA @ 650 V	260pF @ 1V, 1MHz	-	-	Surface Mount	DPAK	175°C (Max)
NXPLQSC106506Q DIODE SCHOTTKY 650V 10A TO220AC WeEn Semiconductors	4,503	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	10A	1.85 V @ 10 A	No Recovery Time > 500mA (Io)	230 µA @ 650 V	250pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	175°C (Max)
WNSC201200CWQ DIODE SIL CARB 1.2KV 20A TO247-3 WeEn Semiconductors	4,087	RFQ	Datasheet	-	TO-247-3	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	20A	1.6 V @ 10 A	No Recovery Time > 500mA (Io)	110 µA @ 1200 V	510pF @ 1V, 1MHz	-	-	Through Hole	TO-247-3	175°C (Max)
WNSC401200CWQ DIODE SIL CARB 1.2KV 40A TO247-3 WeEn Semiconductors	5,908	RFQ	Datasheet	-	TO-247-3	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	40A	1.75 V @ 20 A	No Recovery Time > 500mA (Io)	200 µA @ 1200 V	810pF @ 1V, 1MHz	-	-	Through Hole	TO-247-3	175°C (Max)
WNSC101200Q DIODE SIL CARB 1.2KV 10A TO220AC WeEn Semiconductors	7,277	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	10A	1.6 V @ 10 A	No Recovery Time > 500mA (Io)	110 µA @ 1200 V	510pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	175°C (Max)
WNSC021200Q DIODE SIL CARB 1.2KV 2A TO220AC WeEn Semiconductors	8,662	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	2A	1.6 V @ 2 A	No Recovery Time > 500mA (Io)	20 µA @ 1200 V	109pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	175°C (Max)
WNSC201200WQ DIODE SIL CARB 1.2KV 20A TO247-2 WeEn Semiconductors	3,478	RFQ	Datasheet	-	TO-247-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	20A	1.6 V @ 20 A	No Recovery Time > 500mA (Io)	220 µA @ 1200 V	1020pF @ 1V, 1MHz	-	-	Through Hole	TO-247-2	175°C (Max)
WNSC051200Q DIODE SIL CARB 1.2KV 5A TO220AC WeEn Semiconductors	5,407	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	5A	1.6 V @ 5 A	No Recovery Time > 500mA (Io)	50 µA @ 1200 V	250pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	175°C (Max)
NXPSC16650B6J DIODE SIL CARBIDE 650V 16A D2PAK WeEn Semiconductors	3,106	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	16A	1.7 V @ 16 A	No Recovery Time > 500mA (Io)	100 µA @ 650 V	534pF @ 1V, 1MHz	-	-	Surface Mount	D2PAK	175°C (Max)

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