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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
BYC30WT-600PSQ BYC30WT-600PS/TO-247/STANDARD MA WeEn Semiconductors	5,353	RFQ	Datasheet	-	TO-247-3	Bulk	Active	Standard	600 V	30A	2.75 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 600 V	-	-	-	Through Hole	TO-247-3	175°C
BYV30B-600PJ DIODE GEN PURP 600V 30A D2PAK WeEn Semiconductors	3,448	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	600 V	30A	1.55 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	10 µA @ 600 V	-	-	-	Surface Mount	D2PAK	175°C (Max)
WNSC6D06650Q DIODE SIL CARB 650V 6A TO220AC WeEn Semiconductors	9,656	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.4 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	327pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	175°C
BYV40W-600PQ DIODE GEN PURP 600V 40A TO247-2 WeEn Semiconductors	6,342	RFQ	Datasheet	-	TO-247-2	Bulk	Active	Standard	600 V	40A	1.6 V @ 40 A	Fast Recovery =< 500ns, > 200mA (Io)	79 ns	10 µA @ 600 V	-	-	-	Through Hole	TO-247-2	175°C (Max)
BYR16W-1200Q DIODE GEN PURP 1.2KV 16A TO247-2 WeEn Semiconductors	8,338	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	16A	2.7 V @ 16 A	Fast Recovery =< 500ns, > 200mA (Io)	105 ns	100 µA @ 1200 V	-	-	-	Through Hole	TO-247-2	175°C (Max)
WNSC6D10650D6J WNSC6D10650D/TO252/REEL 13" Q1/T WeEn Semiconductors	8,362	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.45 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	500pF @ 1V, 1MHz	-	-	Surface Mount	DPAK	-55°C ~ 175°C
WNSC2D10650XQ DIODE SIL CARB 650V 10A TO220F WeEn Semiconductors	6,752	RFQ	-	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	310pF @ 1V, 1MHz	-	-	Through Hole	TO-220F	175°C
WNSC6D106506Q WNSC6D10650/TO-220AC/STANDARD MA WeEn Semiconductors	8,531	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.4 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	500pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	175°C
WNSC6D10650B6J WNSC6D10650B/TO263/REEL 13" Q1/T WeEn Semiconductors	6,070	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.45 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	500pF @ 1V, 1MHz	-	-	Surface Mount	D2PAK	-55°C ~ 175°C
WNSC6D10650X6Q WNSC6D10650X/TO220F-2L/STANDARD WeEn Semiconductors	2,760	RFQ	Datasheet	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.45 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	500pF @ 1V, 1MHz	-	-	Through Hole	TO-220F	-55°C ~ 175°C

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