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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
WND35P08Q WND35P08/TO-220AC/STANDARD MARKI WeEn Semiconductors	6,847	RFQ	Datasheet	-	TO-220-2	Bulk	Active	Standard	800 V	35A	1.4 V @ 35 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 600 V	-	-	-	Through Hole	TO-220AC	-40°C ~ 150°C
BYC30MX-650PQ BYC30MX-650P/TO220F-2L/STANDARD WeEn Semiconductors	2,031	RFQ	-	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	Standard	650 V	30A	2.75 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	24 ns	30 µA @ 650 V	-	-	-	Through Hole	TO-220F	-65°C ~ 175°C
BYC15X-600,127 DIODE GEN PURP 500V 15A TO220FP WeEn Semiconductors	2,467	RFQ	Datasheet	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	Standard	500 V	15A	2.9 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	200 µA @ 600 V	-	-	-	Through Hole	TO-220FP	150°C (Max)
BYC30JT-600PSQ DIODE GEN PURP 600V 30A TO3PF WeEn Semiconductors	8,727	RFQ	Datasheet	-	TO-3PFM, SC-93-3	Tube	Active	Standard	600 V	30A	2.75 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	22 ns	10 µA @ 600 V	-	-	-	Through Hole	TO-3PF	175°C
WB45SD160ALZ WB45SD160AL/NAU000/NO MARK*CHIPS WeEn Semiconductors	8,349	RFQ	-	-	Die	Bulk	Active	Standard	1600 V	45A	1.4 V @ 45 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 1600 V	-	-	-	Surface Mount	Wafer	150°C
BYV30JT-600PMQ BYV30JT-600PM/TO3PF/STANDARD MAR WeEn Semiconductors	8,470	RFQ	-	-	TO-3P-3, SC-65-3	Bulk	Active	Standard	600 V	30A	1.8 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	65 ns	10 µA @ 600 V	-	-	-	Through Hole	TO-3PF	175°C
WB30FV60ALZ WB30FV60AL/NAU000/NO MARK*CHIPS WeEn Semiconductors	8,081	RFQ	-	-	Die	Bulk	Active	Standard	600 V	30A	1.55 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	65 ns	10 µA @ 600 V	-	-	-	Surface Mount	Wafer	-40°C ~ 175°C
BYC58X-600,127 DIODE GEN PURP 600V 8A TO220FP WeEn Semiconductors	2,526	RFQ	Datasheet	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	Standard	600 V	8A	3.2 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	12.5 ns	150 µA @ 600 V	-	-	-	Through Hole	TO-220FP	150°C (Max)
WNSC2D051200D6J WNSC2D051200D/TO252/REEL 13" Q1 WeEn Semiconductors	4,281	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	5A	1.6 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	25 µA @ 1200 V	260pF @ 1V, 1MHz	-	-	Surface Mount	DPAK	-55°C ~ 175°C
BYC20-600,127 DIODE GEN PURP 500V 20A TO220AC WeEn Semiconductors	5,624	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	500 V	20A	2.9 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	200 µA @ 600 V	-	-	-	Through Hole	TO-220AC	150°C (Max)

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