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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
LSIC2SD065A20A DIODE SIL CARB 650V 45A TO220-2L Littelfuse Inc.	873	RFQ	Datasheet	Gen2	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	45A	1.8 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	960pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2L	-55°C ~ 175°C
NDSH30120C-F155 SIC DIODE GEN2.0 1200V TO247-2L onsemi	326	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	38A	1.75 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	1961pF @ 1V, 100kHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
STPSC20H12DY DIODE SIL CARB 1.2KV 20A TO220AC STMicroelectronics	970	RFQ	Datasheet	ECOPACK®2	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	20A	1.5 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	120 µA @ 1200 V	1650pF @ 0V, 1MHz	Automotive	AEC-Q101	Through Hole	TO-220AC	-40°C ~ 175°C
IDH15S120AKSA1 DIODE SIL CARB 1.2KV 15A TO220-2 Infineon Technologies	4,906	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	15A	1.8 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	360 µA @ 1200 V	750pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-2	-55°C ~ 175°C
ADC4D10120D DIODE SIL SIC 1200V 9A TO247-3 Analog Power Inc.	550	RFQ	Datasheet	WBG	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	9A	1.8 V @ 2 A	No Recovery Time > 500mA (Io)	-	2 µA @ 1200 V	6.3pF @ 0V, 100kHz	-	-	Through Hole	TO-247-3	-55°C ~ 175°C
RURU15080 DIODE AVALANCHE 800V 150A TO218 Harris Corporation	301	RFQ	Datasheet	-	TO-218-1	Bulk	Active	Avalanche	800 V	150A	1.9 V @ 150 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	500 µA @ 800 V	-	-	-	Chassis Mount	TO-218	-65°C ~ 175°C
FFSH4065A DIODE SIL CARB 650V 48A TO247-2 onsemi	551	RFQ	Datasheet	-	TO-247-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	48A	-	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	1989pF @ 1V, 100kHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
IV1D12015T2 DIODE SIL CARB 1.2KV 44A TO247-2 Inventchip	120	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	44A	1.8 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	80 µA @ 1200 V	888pF @ 1V, 1MHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
PCDP20120G1_T0_00001 TO-220AC, SIC Panjit International Inc.	1,993	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	20A	1.7 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	180 µA @ 1200 V	1040pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
FFSH20120A-F155 DIODE SIL CARB 1.2KV 30A TO247-2 onsemi	579	RFQ	Datasheet	-	TO-247-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	30A	1.75 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	1220pF @ 1V, 100kHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
PCDH20120G1_T0_00601 1200V SIC SCHOTTKY BARRIER DIODE Panjit International Inc.	1,500	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	20A	1.7 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	180 µA @ 1200 V	1023pF @ 1V, 1MHz	-	-	Through Hole	TO-247AD-2	-55°C ~ 175°C
PCDB20120G1_R2_00001 1200V SIC SCHOTTKY BARRIER DIODE Panjit International Inc.	2,365	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	20A	1.7 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	180 µA @ 1200 V	1040pF @ 1V, 1MHz	-	-	Surface Mount	TO-263	-55°C ~ 175°C
NDSH40120C-F155 SIC DIODE GEN2.0 1200V TO247-2L onsemi	421	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	46A	1.75 V @ 40 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	2840pF @ 1V, 100kHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
FFSH30120A-F155 DIODE SIL CARB 1.2KV 46A TO247-2 onsemi	353	RFQ	Datasheet	-	TO-247-2	Tray	Active	SiC (Silicon Carbide) Schottky	1200 V	46A	1.75 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	1740pF @ 1V, 100kHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
IV1D12020T2 DIODE SIL CARB 1.2KV 54A TO247-2 Inventchip	110	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	54A	1.8 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	120 µA @ 1200 V	1114pF @ 1V, 1MHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
FJH1101 DIODE GEN PURP 15V 150MA DO35 onsemi	3,738	RFQ	Datasheet	-	DO-204AH, DO-35, Axial	Bulk	Obsolete	Standard	15 V	150mA	1.1 V @ 50 mA	Small Signal =< 200mA (Io), Any Speed	-	15 pA @ 15 V	2pF @ 0V, 1MHz	-	-	Through Hole	DO-35	175°C (Max)
MBRP30035L RECTIFIER, SCHOTTKY, 300A, 35V Motorola	4,920	RFQ	Datasheet	SWITCHMODE™	Module	Bulk	Active	Schottky	35 V	300A	570 mV @ 300 A	Fast Recovery =< 500ns, > 200mA (Io)	-	10 mA @ 35 V	-	-	-	Chassis Mount	POWERTAP II	-55°C ~ 150°C
CD4955D VOLTAGE REGULATOR Microchip Technology	400	RFQ	-	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
C6D50065D1 SIC, SCHOTTKY DIODE, 136A, 650V, Wolfspeed, Inc.	575	RFQ	Datasheet	-	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	136A	1.5 V @ 50 A	No Recovery Time > 500mA (Io)	-	100 µA @ 650 V	2819pF @ 0V, 1MHz	-	-	Through Hole	TO-247-3	-55°C ~ 175°C
UES1103 DIODE GEN PURP 150V 2.5A AXIAL Microchip Technology	109	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	150 V	2.5A	975 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	2 µA @ 150 V	-	-	-	Through Hole	A, Axial	175°C (Max)

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