Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
NXPSC10650Q DIODE SIL CARB 650V 10A TO220AC WeEn Semiconductors	1,916	RFQ	Datasheet	-	TO-220-2	Tube	Discontinued at Digi-Key	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	250 µA @ 650 V	300pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	175°C (Max)
PCFF75H60F RECTIFIER WAFER DIE onsemi	2,240	RFQ	-	-	-	Tray	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
IV1D12005O2 DIODE SIL CARB 1.2KV 17A TO220-2 Inventchip	164	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	17A	1.8 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 1200 V	320pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
GD30MPS06J DIODE SIL CARB 650V 51A TO263-7 GeneSiC Semiconductor	540	RFQ	Datasheet	SiC Schottky MPS™	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	51A	-	No Recovery Time > 500mA (Io)	-	-	735pF @ 1V, 1MHz	-	-	Surface Mount	TO-263-7	-55°C ~ 175°C
WNSC2D151200WQ DIODE SIL CARB 1.2KV 15A TO247-2 WeEn Semiconductors	4,589	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	15A	1.7 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	150 µA @ 1200 V	700pF @ 1V, 1MHz	-	-	Through Hole	TO-247-2	175°C
VS-80EBU04 DIODE GEN PURP 400V 80A POWIRTAB Vishay General Semiconductor - Diodes Division	234	RFQ	Datasheet	FRED Pt®	PowerTab™, PowIRtab™	Bulk	Obsolete	Standard	400 V	80A	1.3 V @ 80 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 400 V	-	-	-	Chassis Mount	PowIRtab™	-
S4D20120A DIODE SIL CARB 1.2KV 20A TO220AC SMC Diode Solutions	1,043	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	20A	1.8 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 1200 V	721pF @ 0V, 1MHz	-	-	Through Hole	TO-220AC (TO-220-2)	-55°C ~ 175°C
NDSH10120C-F155 SIC DIODE GEN2.0 1200V TO247-2L onsemi	450	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	12A	1.75 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	680pF @ 1V, 100kHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
NXPSC166506Q DIODE SIL CARB 650V 16A TO220AC WeEn Semiconductors	3,003	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	16A	1.7 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	534pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	175°C (Max)
PAD5 TO-72 3L DIODE GEN PURP 45V 50MA TO72-3 Linear Integrated Systems, Inc.	771	RFQ	Datasheet	PAD	TO-72-3 Metal Can	Bulk	Active	Standard	45 V	50mA	1.5 V @ 5 mA	Small Signal =< 200mA (Io), Any Speed	-	5 pA @ 20 V	0.5pF @ 5V, 1MHz	-	-	Through Hole	TO-72-3	-55°C ~ 150°C
NXPSC10650D6J DIODE SIL CARBIDE 650V 10A DPAK WeEn Semiconductors	7,204	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	250 µA @ 650 V	300pF @ 1V, 1MHz	-	-	Surface Mount	DPAK	175°C (Max)
1N3070 DIODE GEN PURP 200V 500MA DO35 Fairchild Semiconductor	3,990	RFQ	Datasheet	-	DO-204AH, DO-35, Axial	Bulk	Obsolete	Standard	200 V	500mA	1 V @ 100 mA	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	100 nA @ 175 V	5pF @ 0V, 1MHz	-	-	Through Hole	DO-204AH (DO-35)	175°C (Max)
RURG8040 DIODE AVALANCHE 400V 80A TO247-2 Harris Corporation	7,789	RFQ	Datasheet	-	TO-247-2	Bulk	Active	Avalanche	400 V	80A	1.6 V @ 80 A	Fast Recovery =< 500ns, > 200mA (Io)	85 ns	500 µA @ 400 V	-	-	-	Through Hole	TO-247-2	-65°C ~ 175°C
1N6643US DIODE GEN PURP 50V 300MA D-5B Microchip Technology	129	RFQ	Datasheet	-	SQ-MELF, E	Bulk	Active	Standard	50 V	300mA	1.2 V @ 100 mA	Fast Recovery =< 500ns, > 200mA (Io)	20 ns	50 nA @ 50 V	5pF @ 0V, 1MHz	-	-	Surface Mount	D-5B	-65°C ~ 175°C
RURU15040RA 150A, 400V ULTRAFAST DIODE Harris Corporation	420	RFQ	-	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
64432119AA LEAD SET IAP MAP SMAP 1SX & 1DX Vishay	303	RFQ	-	-	-	Box	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
LFUSCD10120A DIODE SIL CARB 1.2KV 10A TO220AC Littelfuse Inc.	500	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	250 µA @ 1200 V	500pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	175°C (Max)
S3D30065G DIODE SIL CARBIDE 650V 84A D2PAK SMC Diode Solutions	414	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	84A	1.7 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	140 µA @ 650 V	2307pF @ 0V, 100MHz	-	-	Surface Mount	D2PAK	-55°C ~ 175°C
LSIC2SD120E15CC DIODE SIC 1.2KV 24.5A TO247AD Littelfuse Inc.	450	RFQ	Datasheet	Gen2	TO-247-3	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	24.5A	1.8 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 1200 V	454pF @ 1V, 1MHz	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
SCS210AGHRC DIODE SIL CARB 650V 10A TO220AC Rohm Semiconductor	792	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	10A	1.55 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 600 V	365pF @ 1V, 1MHz	Automotive	AEC-Q101	Through Hole	TO-220AC	175°C (Max)

Total 95236 Record«Prev 1... 714 715 716 717718719 720 721...4762 Next»

PRODUCT

PHONE

USER