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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
JPAD20 TO-92 2L DIODE GEN PURP 35V 10MA TO92 Linear Integrated Systems, Inc.	1,098	RFQ	Datasheet	PAD	TO-226-2, TO-92-2 (TO-226AC)	Bulk	Obsolete	Standard	35 V	10mA	1.5 V @ 5 mA	Small Signal =< 200mA (Io), Any Speed	-	20 pA @ 20 V	1.5pF @ 5V, 1MHz	-	-	Through Hole	TO-92	-55°C ~ 150°C
PAD20 DFN 8L ROHS DIODE GEN PURP 30V 10MA 8DFN Linear Integrated Systems, Inc.	3,000	RFQ	Datasheet	PAD-DFN	8-VFDFN Exposed Pad	Tape & Reel (TR)	Active	Standard	30 V	10mA	1.5 V @ 5 mA	Small Signal =< 200mA (Io), Any Speed	-	20 pA @ 20 V	1.5pF @ 5V, 1MHz	-	-	Surface Mount	8-DFN (2x2)	-55°C ~ 150°C
S3D20065G DIODE SIC 650V 20A TO263-2 SMC Diode Solutions	565	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.7 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	30 µA @ 650 V	1450pF @ 0V, 1MHz	-	-	Surface Mount	TO-263-2	-55°C ~ 175°C
NXPSC106506Q DIODE SIL CARB 650V 10A TO220AC WeEn Semiconductors	3,000	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	250 µA @ 650 V	300pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	175°C (Max)
NXPSC10650X6Q DIODE SIL CARB 650V 10A TO220F WeEn Semiconductors	2,995	RFQ	Datasheet	-	TO-220-2 Full Pack, Isolated Tab	Bulk	Obsolete	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	250 µA @ 650 V	300pF @ 1V, 1MHz	-	-	Through Hole	TO-220F	175°C (Max)
FFSM0865A DIODE SIL CARB 650V 9.6A 4PQFN onsemi	3,000	RFQ	Datasheet	-	4-PowerTSFN	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	9.6A	1.75 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	463pF @ 1V, 100kHz	-	-	Surface Mount	4-PQFN (8x8)	-55°C ~ 175°C
LSIC2SD065A08A DIODE SIL CARB 650V 23A TO220-2L Littelfuse Inc.	1,021	RFQ	Datasheet	Gen2	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	23A	1.8 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	415pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2L	-55°C ~ 175°C
NXPSC10650B6J DIODE SIL CARBIDE 650V 10A D2PAK WeEn Semiconductors	2,290	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	250 µA @ 650 V	300pF @ 1V, 1MHz	-	-	Surface Mount	D2PAK	175°C (Max)
SSTPAD10 SOT-23 3L ROHS DIODE GEN PURP 30V 10MA SOT23-3 Linear Integrated Systems, Inc.	5,955	RFQ	Datasheet	PAD	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	Standard	30 V	10mA	1.5 V @ 5 mA	Small Signal =< 200mA (Io), Any Speed	-	10 pA @ 20 V	1.5pF @ 5V, 1MHz	-	-	Surface Mount	SOT-23-3	-55°C ~ 150°C
FFSB1265A DIODE SIL CARB 650V 14A D2PAK-3 onsemi	670	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	14A	1.75 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	665pF @ 1V, 100kHz	-	-	Surface Mount	TO-263 (D2PAK)	-65°C ~ 175°C
SSTPAD5 SOT-23 3L ROHS DIODE GEN PURP 30V 10MA SOT23-3 Linear Integrated Systems, Inc.	3,059	RFQ	Datasheet	PAD	TO-236-3, SC-59, SOT-23-3	Cut Tape (CT)	Active	Standard	30 V	10mA	1.5 V @ 5 mA	Small Signal =< 200mA (Io), Any Speed	-	5 pA @ 20 V	0.5pF @ 5V, 1MHz	-	-	Surface Mount	SOT-23-3	-55°C ~ 150°C
SICRB12650 DIODE SIL CARBIDE 650V 12A D2PAK SMC Diode Solutions	247	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.7 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	150 µA @ 650 V	750pF @ 0V, 1MHz	-	-	Surface Mount	D2PAK	-55°C ~ 175°C
CDBDSC10650-G DIODE SIL CARBIDE 650V 10A DPAK Comchip Technology	355	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	690pF @ 0V, 1MHz	-	-	Surface Mount	DPAK	-55°C ~ 175°C
PAD10 DFN 8L ROHS DIODE GEN PURP 30V 10MA 8DFN Linear Integrated Systems, Inc.	3,000	RFQ	Datasheet	PAD-DFN	8-VFDFN Exposed Pad	Tape & Reel (TR)	Active	Standard	30 V	10mA	1.5 V @ 5 mA	Small Signal =< 200mA (Io), Any Speed	-	10 pA @ 20 V	1.5pF @ 5V, 1MHz	-	-	Surface Mount	8-DFN (2x2)	-55°C ~ 150°C
NXPSC126506Q DIODE SIL CARB 650V 12A TO220AC WeEn Semiconductors	990	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	12A	1.7 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	80 µA @ 650 V	380pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	175°C (Max)
PAD5DFN 8L ROHS DIODE GEN PURP 30V 10MA 8DFN Linear Integrated Systems, Inc.	6,078	RFQ	Datasheet	PAD-DFN	8-VFDFN Exposed Pad	Tape & Reel (TR)	Active	Standard	30 V	10mA	1.5 V @ 5 mA	Small Signal =< 200mA (Io), Any Speed	-	5 pA @ 20 V	1.5pF @ 5V, 1MHz	-	-	Surface Mount	8-DFN (2x2)	-55°C ~ 150°C
WNSC6D20650B6J DIODE SIL CARBIDE 650V 20A D2PAK WeEn Semiconductors	4,518	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.55 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	80 µA @ 650 V	780pF @ 1V, 1MHz	-	-	Surface Mount	D2PAK	175°C
S4D20120G DIODE SIL CARB 1.2KV 20A D2PAK SMC Diode Solutions	388	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	20A	1.8 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	721pF @ 0V, 1MHz	-	-	Surface Mount	D2PAK	-55°C ~ 175°C
1N483B DIODE GEN PURP 80V 200MA DO35 Fairchild Semiconductor	12,654	RFQ	Datasheet	-	DO-204AH, DO-35, Axial	Bulk	Active	Standard	80 V	200mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	-	25 nA @ 60 V	-	-	-	Through Hole	DO-35	175°C (Max)
S4D10120H DIODE SIL CARB 1.2KV 10A TO247AC SMC Diode Solutions	507	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 1200 V	772pF @ 0V, 1MHz	-	-	Through Hole	TO-247AC	-55°C ~ 175°C

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